Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    NE251 Search Results

    SF Impression Pixel

    NE251 Price and Stock

    Industrial Magnetics Inc NE2518NP35

    MAGNET 0.250"D X 0.187"THICK RND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE2518NP35 Bag 1
    • 1 $0.62
    • 10 $0.62
    • 100 $0.62
    • 1000 $0.62
    • 10000 $0.62
    		Buy Now

    California Eastern Laboratories (CEL) NE25139-T1

    RF MOSFET 5V SOT143
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE25139-T1 Reel 3,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.6565
    		Buy Now

    Industrial Magnetics Inc NE2512NP42

    MAGNET 0.250"D X 0.125"THICK RND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE2512NP42 Bag 1
    • 1 $0.53
    • 10 $0.53
    • 100 $0.53
    • 1000 $0.53
    • 10000 $0.53
    		Buy Now

    Industrial Magnetics Inc NE2510NP35

    MAGNET 0.250"D X 0.100"THICK RND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE2510NP35 Bag 1
    • 1 $0.8
    • 10 $0.8
    • 100 $0.8
    • 1000 $0.8
    • 10000 $0.8
    		Buy Now

    Industrial Magnetics Inc NE2512NP35

    MAGNET 0.250"D X 0.125"THICK RND
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey NE2512NP35 Bag 1
    • 1 $0.49
    • 10 $0.49
    • 100 $0.49
    • 1000 $0.49
    • 10000 $0.49
    		Buy Now
    Find more NE251 price and stock on Findchips.com

    NE251 Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE25118 NEC General purpose dual-gate GaAS MESFET. Original PDF
    NE25118 NEC Semiconductor Selection Guide Original PDF
    NE25118-T1 NEC GENERAL PURPOSE DUAL-GATE GaAS MESFET Original PDF
    NE25137 NEC General purpose dual-gate GaAs MESFET Scan PDF
    NE25139 NEC Semiconductor Selection Guide Original PDF
    NE25139 NEC General purpose dual-gate GaAS MESFET. Idss range 5-40 mA. Original PDF
    NE25139 NEC General purpose dual-gate GaAs MESFET Scan PDF
    NE25139-T1 NEC General purpose dual-gate GaAS MESFET. Idss range 5-40 mA. Original PDF
    NE25139T1U71 NEC General purpose dual-gate GaAS MESFET. Idss range 5-15 mA. Original PDF
    NE25139T1U72 NEC General purpose dual-gate GaAS MESFET. Idss range 10-25 mA. Original PDF
    NE25139-T1-U73 NEC RF FETs, Discrete Semiconductor Products, FET 900 MHZ SOT-143 Original PDF
    NE25139T1U73 NEC General purpose dual-gate GaAS MESFET. Idss range 20-35 mA. Original PDF
    NE25139T1U74 NEC General purpose dual-gate GaAS MESFET. Idss range 30-40 mA. Original PDF
    NE25139U71 NEC General purpose dual-gate GaAS MESFET. Idss range 5-15 mA. Original PDF
    NE25139U72 NEC General purpose dual-gate GaAS MESFET. Idss range 10-25 mA. Original PDF
    NE25139U73 NEC General purpose dual-gate GaAS MESFET. Idss range 20-35 mA. Original PDF
    NE25139U74 NEC General purpose dual-gate GaAS MESFET. Idss range 30-40 mA. Original PDF

    NE251 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    NE25139

    Abstract: active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73
    Text: California Eastern Laboratories APPLICATION NOTE AN1020 Active Mixer Design Using the NE25139 Dual Gate MESFET Active mixers have some advantages over passive double balanced mixers. The most obvious advantage is that they provide gain instead of loss. This reduces the gain requirements on the low noise amplifier and the IF stage in a receiver.


    Original     		AN1020 NE25139 NE25139 active double balanced mixer dual gate fet passive mixer passive mixer downconverter AN1020 NE25139T1U73 PDF

    NE25118

    Abstract: NE25118-T1
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH POWER GAIN: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		NE25118 NE25118 NE25118-T1 24-Hour NE25118-T1 PDF

    NE25139

    Abstract: ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		NE25139 NE251 NE25139T1U74 24-Hour NE25139 ne720b transistor marking U72 ghz NE25139-T1 NE25139U71 NE720 NE25139T1U74 NE25139T1U71 16E-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: NE25139U74 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)13 V(BR)GSS (V) I(D) Max. (A)40m P(D) Max. (W)200m Maximum Operating Temp (øC)125õ I(DSS) Min. (A)30m I(DSS) Max. (A)40m @V(DS) (V) (Test Condition)5.0 @Temp (øC) (Test Condition)25


    Original     		NE25139U74 PDF

    Untitled

    Abstract: No abstract text available
    Text: NE25139U71 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)13 V(BR)GSS (V) I(D) Max. (A)40m P(D) Max. (W)200m Maximum Operating Temp (øC)125õ I(DSS) Min. (A)5.0m I(DSS) Max. (A)15m @V(DS) (V) (Test Condition)5.0 @Temp (øC) (Test Condition)25


    Original     		NE25139U71 PDF

    NE25139T1U73

    Abstract: NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH GPS: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		NE25139 NE251 24-Hour NE25139T1U73 NE25139 NE25139U74 NE25139-T1 NE25139T1U71 NE25139T1U72 NE25139U71 NE25139U72 NE25139U73 fet dual gate sot143 PDF

    Untitled

    Abstract: No abstract text available
    Text: NE25139 Transistors N-Channel Dual-Gate UHF/Microwave MESFET V BR DSS (V)13 V(BR)GSS (V) I(D) Max. (A)40m P(D) Max. (W)200m Maximum Operating Temp (øC)125õ I(DSS) Min. (A)5.0m I(DSS) Max. (A)40m @V(DS) (V) (Test Condition)5.0 @Temp (øC) (Test Condition)25


    Original     		NE25139 PDF

    NE25118

    Abstract: NE25118-T1 Pt 2229
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE • SUITABLE FOR USE AS RF AMPLIFIER IN UHF TUNER GPS 10 • HIGH POWER GAIN: 20 dB TYP AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz • LG1 = 1.0 µm, LG2 = 1.5 µm, WG = 400 µm


    Original     		NE25118 NE25118 NE25118-T1 24-Hour NE25118-T1 Pt 2229 PDF

    k2645

    Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
    Text: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt


    Original     		MK135 MK136 MK137 MK138 MK139 MK140 Mk142 MK145 MK155 157kr k2645 k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417 PDF

    FET marking code g5d

    Abstract: PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic
    Text: RF AND MICROWAVE DEVICES PRODUCT LINEUP www.renesas.com 2010.07 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .


    Original     		R09CL0001EJ0100 PX10727EJ02V0PF) FET marking code g5d PG2179TB marking code C3E SOT-89 marking code C1E mmic marking code C1G mmic 2SC3357/NE85634 PG2163T5N sot-23 g6g PC8230TU marking code C1H mmic PDF

    nec mosfet marked v75

    Abstract: NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77
    Text: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社


    Original     		G0706 PX10727EJ02V0PF nec mosfet marked v75 NEC Ga FET marking code T79 FET marking code g5d marking code C1G mmic LGA 1155 PIN diagram PB1507 marking code C1E mmic marking code C1H mmic PC8230TU MMIC SOT 363 marking CODE 77 PDF

    2SK2396

    Abstract: PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711
    Text: CD-ROM版RF & マイクロ波デバイス CD-ROM X13769XJ2V0CD00 11−1 RF & マイクロ波デバイス IC • 可変利得増幅器（µ PCx×××，µPG××××） 品 名 µPC8119T アプリケーション 移動通信 電源電圧 電流 周波数


    Original     		X13769XJ2V0CD00 PC8119T PC8120T PC8130TA PC8131TA PG175TA PC2723T PC3206GR PC2748 PC2745 2SK2396 PC2763 pc1658 ne27283 2SC3545 2SC3357 2sc2757 ne93239 2SC2570A PC2711 PDF

    uPD16305

    Abstract: uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943
    Text: Search by Product Name Find tool 1. Click the icon on the tool bar. 2. The find dialog box will be displayed. 3. Input the full product name or part of the product name to Find be located and click . 4. A characteristic table will be displayed if the retrieved product name is clicked.


    Original     		PD43256A> PD43256A X13769XJ2V0CD00 PD750004 PD750006 PD750008 PD75P0016 PD750104 PD750106 PD750108 uPD16305 uPD63724A upc5024 UPC5023 2SC1940 uPC1237 uPD65656 UPC458 UPC2710 UPD65943 PDF

    nf025

    Abstract: NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408
    Text: CD-ROM RF and Microwave Devices CD-ROM X13769XJ2V0CD00 11-1 RF and Microwave Devices IC • AGC AMP. µ PCx×××, µPG×××× Part Number Applications Supply Voltage (V) Supply Current (mA) Operating Frequency (MHz) µPC8119T Mobile Comm. 3 11 100–1920


    Original     		X13769XJ2V0CD00 950MHz 500MHz PC2794 PC1687 PC2744 PC2775/µ nf025 NE27283 upc27 x-band power transistor 100W NE42484 P147D 2SK2396 uPG508 nf025db 2SC5408 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES_ • SU ITA B LE FOR USE AS RF AM PLIFIER IN UH FTUNER • LOW C rss: 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 MHz • LOW NF: 1.1 dB TYP AT 900 MHz NE25139 POWER GAIN AND NOISE FIGURE vs.


    OCR Scan     		NE25139 NE251 OT-143) NE25139 E25139-T1 NE25139U71 NE25139T1U71 NE25139U72 E25139T1U72 NE25139U73 PDF

    e2513

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 P O W ER GA IN A N D N O IS E F IG U R E vs. D R A IN T O S O U R C E V O LT A G E SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER GPS LOW C r s s : 0.02 pF TYP A n m •o HIGH GPS: 20 dB (TYP) AT 900 MHz


    OCR Scan     		NE25139 NE251 E25139-T1 25139U 25139T1U e2513 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES SUITABLE FOR USE A S RF AMPLIFIER IN UHF TUNER NE25118 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE LOW CRSS: 0.02 pF TYP HIGH POWER GAIN: 20 d B (T YP ) A T 900 M Hz m *o LOW NF: 1.1 d B T Y P A T 900 M Hz


    OCR Scan     		NE25118 J01S-0 PDF

    NEC Ga FET marking A

    Abstract: NE25139T1U74 NE25139U NE25139T1U71
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER QPS LOW CRSS: 0.02 pF TYP M — /; { ' // i ! 1 V f 1 HIGH GPS: 20 dB (TYP) AT 900 MHz LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		NE25139 Vi32S 90CIM NE251 NE25139T1 NE25139U74 24-Hour NEC Ga FET marking A NE25139T1U74 NE25139U NE25139T1U71 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25118 POWER GAIN AND NOISE FIGURE vs. SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP HIGH POWER GAIN: 20 dB (TYP) AT 900 MHz m LOW NF: 1.1 dB TYP AT 900 MHz cn CL CD c 55 e Lgi = 1 .0 jim, Lg2 = 1.5 nm, Wg = 400 |xm


    OCR Scan     		NE25118 NE25118 OT-343 IS11I2 IS12I 1S12S21I OT-343) NE25118-T1 PDF

    PJ 3139

    Abstract: NE25137 NEC Ga FET marking L NE76084 NE25139 DUAL FET marking JE FET fet dual gate sot143
    Text: N E C / CALIFORNIA 1SE NEC D b427414 Q001bS3 GENERAL PURPOSE DUAL-GATE GaAs MESFET • S U I T A B L E F O R U S E A S R F A M P L I F I E R IN U H F TUNER rss: NE25137 NE25139 O U T L I N E D I M E N S I O N S Units in mm FEATURES • LO W C 7 ^ 2 .5 “


    OCR Scan     		b427414 Q001bS3 NE25137 NE25139 NE251 NE76084 Rn/50 PJ 3139 NEC Ga FET marking L NE25139 DUAL FET marking JE FET fet dual gate sot143 PDF

    Untitled

    Abstract: No abstract text available
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POW ER GAIN AND NOISE FIGURE vs. DRAIN TO S O U R C E V O LT AG E • SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER • LOW C r s s : 0.02 pF TYP • HIGH GPS: 20 dB (TYP) AT 900 M Hz m • LOW NF: 1.1 d B T Y P A T 900 MHz


    OCR Scan     		NE25139 NE251 OT-143) NE25139 NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 PDF

    U73-U74

    Abstract: 14E-14
    Text: GENERAL PURPOSE DUAL-GATE GaAS MESFET FEATURES NE25139 POWER GAIN AND NOISE FIGURE vs. DRAIN TO SOURCE VOLTAGE SUITABLE FOR USE AS RF AMPLIFIER IN UHFTUNER LOW C r s s : 0.02 pF TYP m HIGH GPS: 20 dB (TYP) AT 900 MHz CÛ •a 7D LOW NF: 1.1 dB TYP AT 900 MHz


    OCR Scan     		NE25139 NE251 OT-143) NE25139-T1 NE25139U71 NE25139T1U71 NE25139U72 NE25139T1U72 NE25139U73 U73-U74 14E-14 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    LORB

    Abstract: NE2720 NE334S01
    Text: Small Signal GaAs FETs Selection Guide. 1-2 Small Signal GaAs FET Selection Guide LOW NOISE GaAs FETs Typical S pecificatio ns @ Ta = 25°C PM Number Sat« Gate Length W idth Mm ftim ) •i.t RecomrnaruM Frequency Rang* . pVMW ' gB S " NE23300 0.3 280 0.1 to 18


    OCR Scan     		NE23300 NE24200 NE27200 NE67400 NE32400 NE32500 NE32900 NE33200 NE325S01 NE329S01 LORB NE2720 NE334S01 PDF