BTS 132 SMD
Abstract: No abstract text available
Text: PD57002-E RF power transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Datasheet — production data Features • Excellent thermal stability ■ Common source configuration ■ POUT = 2 W with 15dB gain @ 960 MHz / 28 V ■ New RF plastic package
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PD57002-E
PowerSO-10
BTS 132 SMD
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PD57045S
Abstract: 700B AN1294 PD57045
Text: PD57045 PD57045S RF POWER TRANSISTORS The LdmoST FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 45 W with 13 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE DESCRIPTION The PD57045 is a common source N-Channel,
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PD57045
PD57045S
PD57045
PowerSO-10RF.
PD57045S
700B
AN1294
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AN1294
Abstract: PD57002 PD57002S BTS 472 E 0927 TRANSISTOR
Text: PD57002 PD57002S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 2 W with 15 dB gain @ 960 MHz / 28 V • NEW RF PLASTIC PACKAGE PowerSO-10RF
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PD57002
PD57002S
PowerSO-10RF
PD57002
PowerSO-10
AN1294
PD57002S
BTS 472 E
0927 TRANSISTOR
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AN1294
Abstract: PD55008 PD55008S 11 0741
Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION
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PD55008
PD55008S
PD55008
PowerSO-10RF.
AN1294
PD55008S
11 0741
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2.4GHz Cordless Phone circuit diagram
Abstract: 42 dbm 2.4GHz amplifier schematic PA2423 PA2423MB PA2423MB-EV PA2423MB-R 2.4GHz antenna schematic
Text: PA2423MB 2.4GHz Power Amplifier IC Production Information Product Description Features A monolithic, high-efficiency, silicon-germanium power amplifier IC, the PA2423MB is designed for 2.4GHz wireless applications including tm Class 1 wireless technology and
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PA2423MB
PA2423MB
10-DST-01
2.4GHz Cordless Phone circuit diagram
42 dbm 2.4GHz amplifier schematic
PA2423
PA2423MB-EV
PA2423MB-R
2.4GHz antenna schematic
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transistor C640
Abstract: transistor bf 179 transistor c640 npn START499 START499TR ST 7 L05 RF NPN power transistor 2.5GHz Ko 368
Text: START499 NPN Silicon RF Transistor • HIGH EFFICIENCY • HIGH GAIN • LINEAR AND NON LINEAR OPERATION • TRANSITION FREQUENCY 42GHz • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START499TR DESCRIPTION START499 is a product of the START family that
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START499
42GHz
OT343
START499TR
START499
OT343
transistor C640
transistor bf 179
transistor c640 npn
START499TR
ST 7 L05
RF NPN power transistor 2.5GHz
Ko 368
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J-STD-020B
Abstract: PD55003L
Text: PD55003L RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW LEADLESS PLASTIC PACKAGE • ESD PROTECTION
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PD55003L
PD55003L
J-STD-020B
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945 TRANSISTOR
Abstract: 700B AN1294 PD57018 PD57018S
Text: PD57018 PD57018S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 18 W WITH 16.5 dB gain @ 945 MHz / 28V • NEW RF PLASTIC PACKAGE
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PD57018
PD57018S
PowerSO-10RF
PD57018
945 TRANSISTOR
700B
AN1294
PD57018S
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PD57002-E
Abstract: BTS 132 SMD PD57002S PD57002S-E AN1294 JESD97 PD57002
Text: PD57002-E PD57002S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 2W with 15dB gain @ 960MHz / 28V ■ New RF plastic package
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PD57002-E
PD57002S-E
960MHz
PowerSO-10RF
PD57002
PowerSO-10
PD57002-E
BTS 132 SMD
PD57002S
PD57002S-E
AN1294
JESD97
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SOT343 C5
Abstract: SPICE 2G6 START405 START405TR
Text: START405 NPN Silicon RF Transistor • LOW NOISE FIGURE: NFmin = 1.1dB @ 1.8GHz, 2mA, 2V • COMPRESSION P1dB = 5dBm @ 1.8GHz, 5mA, 2V • TRANSITION FREQUENCY 42GHz • LOW CURRENT CONSUMPTION • ULTRA MINIATURE SOT343 PACKAGE SOT343 SC70 ORDER CODE START405TR
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START405
42GHz
OT343
OT343
START405TR
START405
500MHz-5GHz
SOT343 C5
SPICE 2G6
START405TR
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BF295
Abstract: c785 C785 transistor BF 295 transistor BF 451 START450 START450TR transistor C740
Text: START450 NPN Silicon RF Transistor • COMPRESSION POINT P1dB=19dBm @ 1.8GHz • TRANSITION FREQUENCY 42GHz • HIGH LINEARITY • ULTRA MINIATURE SOT343 SC70 PACKAGE SOT343 (SC70) ORDER CODE START450TR DESCRIPTION The START450 is a member of the START family that
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START450
19dBm
42GHz
OT343
OT343
START450TR
START450
500MHz-5GHz
BF295
c785
C785 transistor
BF 295
transistor BF 451
START450TR
transistor C740
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AN1294
Abstract: PD57006 PD57006-E PD57006S PD57006S-E PD57006STR-E PD57006TR-E PD57006E
Text: PD57006-E PD57006S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 6W with 15dB gain @ 945MHz / 28V ■ New RF plastic package
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PD57006-E
PD57006S-E
945MHz
PowerSO-10RF
PD57006
PowerSO-10RF.
PD570and
AN1294
PD57006-E
PD57006S
PD57006S-E
PD57006STR-E
PD57006TR-E
PD57006E
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transistor smd po3
Abstract: PD55003 AN1294 PD55003S
Text: PD55003 PD55003S RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCE DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 3 W with 17 dB gain @ 500 MHz / 12.5 V • NEW RF PLASTIC PACKAGE
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PD55003
PD55003S
PD55003
PowerSO-10RF.
transistor smd po3
AN1294
PD55003S
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nec 151
Abstract: transistor NEC ka 42 NEC D 553 C nec, hetero junction transistor NE32900
Text: PRELIMINARY DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32900 C to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET CHIP DESCRIPTION NE32900 is Hetero Junction FET chip that utilizes the hetero junction between Si-doped AIGaAs and undoped InGaAs to create high mobility electrons.
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NE32900
NE32900
nec 151
transistor NEC ka 42
NEC D 553 C
nec, hetero junction transistor
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CQ 817
Abstract: cq 0765 TRANSISTOR cq 817 ic 4580 2SC4860
Text: Ordering number: E N 4 5 8 0 2SC4860 No.4580 NPN E pitaxial P lan ar Silicon Transistor SA\YO UHF Converter, Local Oscillator Applications i F e a tu r e s • H igh cutoff frequency :fT = 6.5GHztyp. * H igh gain : I S21e l2= 11.5dB typ f= 1GHz . •Sm all Cob : N F = 0.65pF typ.
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EN4580
2SC4860
CQ 817
cq 0765
TRANSISTOR cq 817
ic 4580
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Untitled
Abstract: No abstract text available
Text: TO SH IBA TA4003F TOSHIBA BIPOLAR LINEAR INTEGRATED CIRCUIT SILICON MONOLITHIC T A4 0 0 3 F VHF-UHF WIDE BAND AMPLIFIER FEATURES • Band Width 1.5 CHz Typ. (3dB down, VCc = 2 V) • High Gain : |S2 i|2 = 11dB (Typ.), (f = 500 MHz, VCc = 2V) • Operating Supply Voltage
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TA4003F
IS12P
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Untitled
Abstract: No abstract text available
Text: IVA-05200 MagIC Silicon Bipolar MMIC 1.5 GHz Variable Gain Amplifier Chip April, 1991 O ava ntek IVA-05200 Chip Outline Features • • • • • • • Differential Input and Output Capability DC to 1.5 GHz Bandwidth; 2.0 Gb/s Data Rates High Gain: 30 dB typical
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IVA-05200
IVA-05200
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plate capacitor
Abstract: 8038 block diagram
Text: 4 I9 Ö S E M I C O N D U C T O R I N C TOSÌÌ I R E L E S S C O M M U N I C A T I O N S TQ9111 Block Diagram 0.3 0.1 V D D V D D ID S S ID S S 1 2 1 -8 GHz Amplifier RF GND1 RF RF RF GND2 GND3 GND4 Product Description Features The TQ9111 is a general-purpose cascadable
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TQ9111
TQ9111
3625ASW
plate capacitor
8038 block diagram
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Untitled
Abstract: No abstract text available
Text: What H E W L E T T mLnM P a c k a r d Low N oise, Cascadable Silicon Bipolar MMIC Amplifier Technical Data INA-02184 INA-02186 F eatures • Cascadable 50 Q Gain Block • Low N oise Figure: 2.0 dB Typical at 0.5 GHz • High Gain: 31 dB Typical at 0.5 GHz
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INA-02184
INA-02186
INA-02184
INA-02186
5965-9675E
4447SA4
01fl35c
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sk 0632
Abstract: No abstract text available
Text: NEZ5964-15D NEZ5964-15DL NEZ5964-8D NEZ5964-8DL NEZ5964-4D NEZ5964-4DL C-BAND INTERNALLY MATCHED POWER GaAs MESFET FEATURES • OUTPUT POWER AND EFFICIENCY HIGH P out 18W 42.5 dBm Typ PidB for NEZ5964-15D/15DL 9W (39.5 dBm) Typ P idB for NEZ5964-8D/8DL 4.5W (36.5 dbm) Typ PidB for NEZ5964-4D/40L
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NEZ5964-15D/15DL
NEZ5964-8D/8DL
NEZ5964-4D/40L
NEZ5964-15D
NEZ5964-15DL
NEZ5964-8D
NEZ5964-8DL
NEZ5964-4D
NEZ5964-4DL
-15DL
sk 0632
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jis z 0237
Abstract: l 0734 HP11590B
Text: MOTOROLA Order this document by MRF5811LT1/D SEMICONDUCTOR TECHNICAL DATA The RF Line MRF5811LT1, T3 NPN Silicon High-Frequency TVansistors M o to r o la P r e fe r r e d D e v ic e s Designed for high current low power amplifiers up to 1.0 GHz. • Low Noise 2.0 dB @ 500 MHz
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MRF5811LT1/D
MRF5811LT1,
2PHX34607Q
jis z 0237
l 0734
HP11590B
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2sa1424
Abstract: NE88900 NE889
Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in
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NE88900
NE88912
NE88933
NE88935
NE88900,
NE88912,
NE88933,
NE88935
OT-23)
2sa1424
NE889
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shock vk200
Abstract: marking c7 sot-23 MMBFU310LT1
Text: MOTOROLA Order this document by MMBFU310LT1/D SEMICONDUCTOR TECHNICAL DATA JFET "Transistor N-Channel 2 SOURCE M MBFU310LT1 Motorola Preferred Device MAXIMUM RATINGS Symbol Value Unit Drain-Source Voltage Vd S 25 Vdc Gate-Source Voltage vgs 25 Vdc Ig 10 mAdc
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MMBFU310LT1/D
MBFU310LT1
OT-23
236AB)
MMBFU310LT1
shock vk200
marking c7 sot-23
MMBFU310LT1
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2SC2570
Abstract: 2sc2570 transistor NE02132
Text: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,
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NE021
NE02107
PACKAGEOUTUNE33
OT-23)
b427525
00b5b07
2SC2570
2sc2570 transistor
NE02132
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