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    NE88912 Search Results

    NE88912 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    NE88912 Unknown Semiconductor Master Cross Reference Guide Scan PDF
    NE88912 NEC PNP Silicon High Frequency Transistor Scan PDF

    NE88912 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: NE88912 Transistors Bipolar PNP UHF/Microwave Transisitor Military/High-RelN V BR CEO (V) V(BR)CBO (V)20 I(C) Max. (A)50m Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition)


    Original     		PDF NE88912

    NE24483

    Abstract: AF367 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119
    Text: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Po Manufacturer Max W V(BR)CBO (V) fose Max (Hz) Gp Po N.F. (dB) (W) (dB) at fTeat (Hz) Ie Max (A) TOpe, Mati. Max (OC) Package Style UHF/Microwav Transistors, Bipolar NPN (Co nt' d) S01543 ThmsnCSFEFC


    Original     		PDF S01543 AF367 AF280S 2N2999 2N2415 2N2416 2SA1245 BFQ24 NE59333 BFQ52 NE24483 NE38883 BFT93R NE13783, ATF-10135 BFT92R BF936 CFX21 to119

    2sa1424

    Abstract: NE88900 NE889
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION FEATURES • HIGH GAIN BANDWIDTH PRODUCT: T h e N E 8 8 9 series of P N P silicon transistors is designed for ultrahigh speed current m ode switching applications and m icrowave amplifiers up to 2 G H z.T h e N E 8 8 9 is available in


    OCR Scan     		PDF NE88900 NE88912 NE88933 NE88935 NE88900, NE88912, NE88933, NE88935 OT-23) 2sa1424 NE889

    2SA1424

    Abstract: No abstract text available
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES_ DESCRIPTION • PNP COMPLEMENT TO NE327 The NE889 series of PNP silicon transistors is designed for uttrahigh speed current mode switching applications and


    OCR Scan     		PDF NE327 NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IS12I 2SA1424

    2SA1424

    Abstract: 2SA1228 NE88935 G503 NE327 NE88900 NE AND micro-X NE88933 2SA1223 NE88912
    Text: f NEC/ CALIFORNIA NEC b427414 D0DES05 4DT SbE D INECC NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION AND APPLICATIONS • PNP COMPLEMENT TO NE327 The NE889 series o f PNP silico n transistors is designed for ultra high speed current mode sw itching applications and


    OCR Scan     		PDF b427414 NE88900 NE88912 NE88933 NE88935 NE327 NE889 NE88900) NE88935 2SA1424 2SA1228 G503 NE327 NE AND micro-X 2SA1223

    2SA1424

    Abstract: No abstract text available
    Text: NE88900 NE88912 NE88933 NE88935 PNP SILICON HIGH FREQUENCY TRANSISTOR FEATURES DESCRIPTION • HIG H GAIN BANDW IDTH PRO DUCT: f T = 4 GHz The NE889 series of PNP silicon transistors is designed for ultrahigh speed current mode sw itching applications and


    OCR Scan     		PDF NE88900 NE88912 NE88933 NE88935 NE889 NE88900) NE88935 IL-S-19500 NE88900, 2SA1424

    Motorola transistors MRF 947

    Abstract: trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp
    Text: Selector Guide 1 Discrete Transistor Data Sheets Amplifier Data Sheets Monolithic Integrated Circuit H Data Sheets mm Case Dimensions Cross Reference and Sales Offices 6 M MOTOROLA RF Device Data This publication presents technical information for the several product families that


    OCR Scan     		PDF 2PHX11136Q-17 Motorola transistors MRF 947 trimpots 3296 transistor C5386 1n4740 2N5591 Motorola 2N5688 CQ 542 Transistor npn motorola equivalent transistor of 2sc3358 HB215/D ic cd 2399 gp

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Text: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


    OCR Scan     		PDF AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720

    MHW721A2

    Abstract: 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503
    Text: Volume I Selector Guide 1 Discrete Transistor Data Sheets 2 Case Dimensions 3 Volume II Selector Guide Amplifier Data Sheets 5 Tuning, Hot Carrier and PIN Diode Data Sheets 6 Technical Information Case Dimensions 8 Cross Reference and Sales Offices 9 MOTOROLA RF DEVICE DATA


    OCR Scan     		PDF 1PHX11136Q-14 MHW721A2 13001 S 6D TRANSISTOR atv5030* motorola 2N5591 MOTOROLA 13001 6D TRANSISTOR BGY41 MHW710-1 construction linear amplifier 2sc1945 7119 amperex bf503

    transistor IR 324 C

    Abstract: transistor selection guide
    Text: Small Signal Bipolar Transistor Selection Guide Typical Minimum Noise Figures and Associated Gain vs. Frequency d B Gain Optimum Figure, G a (d B ) Noise Noise Figure, N F opt at Optimum F re q u e n c y , f (G H z ) Typical Output Power and Gain vs. Frequency


    OCR Scan     		PDF NE46134 NE85634 NE46134 NE46734 NE68018-T1 transistor IR 324 C transistor selection guide