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    PD55008 Price and Stock

    STMicroelectronics PD55008-E

    RF MOSFET LDMOS 12.5V POWERSO10
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    DigiKey PD55008-E Tube 287 1
    • 1 $16.94
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    Avnet Americas PD55008-E Bag 23 Weeks 400
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    Mouser Electronics PD55008-E 1,592
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    STMicroelectronics PD55008-E 1,592 1
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    STMicroelectronics PD55008TR-E

    RF MOSFET LDMOS 12.5V PWRSO-10RF
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    DigiKey PD55008TR-E Cut Tape 235 1
    • 1 $17.4
    • 10 $12.532
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    PD55008TR-E Reel 600
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    PD55008TR-E Digi-Reel 1
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    Avnet Americas PD55008TR-E Reel 23 Weeks 600
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    Mouser Electronics PD55008TR-E 999
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    STMicroelectronics PD55008TR-E 999 1
    • 1 $15.42
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    Ameya Holding Limited PD55008TR-E 2,400
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    Win Source Electronics PD55008TR-E 260
    • 1 $659.421
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    STMicroelectronics PD55008

    RF MOSFET LDMOS 12.5V POWERSO10
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    Win Source Electronics PD55008 400
    • 1 $112.319
    • 10 $94.203
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    STMicroelectronics PD55008TR

    RF MOSFET LDMOS 12.5V POWERSO10
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    DigiKey PD55008TR Reel 600
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    STMicroelectronics PD55008S-E

    RF MOSFET LDMOS 12.5V PWRSO-10RF
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    DigiKey PD55008S-E Tube 400
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    STMicroelectronics PD55008S-E 1
    • 1 $14.61
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    Avnet Silica PD55008S-E 17 Weeks 50
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    Find more PD55008 price and stock on Findchips.com

    PD55008 Datasheets (18)

    Part ECAD Model Manufacturer Description Curated Type PDF
    PD55008 STMicroelectronics RF POWER TRANSISTORS The LdmoST Plastic FAMILY Original PDF
    PD55008 STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD55008 STMicroelectronics RF Power Transistor Original PDF
    PD55008-E STMicroelectronics RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD55008-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET LDMOST PWRSO10 Original PDF
    PD55008L STMicroelectronics RF Power Transistor Original PDF
    PD55008L STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD55008L-E STMicroelectronics RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD55008S STMicroelectronics RF POWER TRANSISTORS The LdmoST Plastic FAMILY Original PDF
    PD55008S STMicroelectronics RF Power Transistor Original PDF
    PD55008S-E STMicroelectronics RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD55008S-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANS RF N-CH FET LDMOST PWRSO10 Original PDF
    PD55008STR STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD55008STR-E STMicroelectronics RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD55008STR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, IC TRANS RF PWR LDMOST PWRSO-10 Original PDF
    PD55008TR STMicroelectronics RF POWER TRANSISTORS THE LDMOST PLASTIC FAMILY Original PDF
    PD55008TR-E STMicroelectronics RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs Original PDF
    PD55008TR-E STMicroelectronics RF FETs, Discrete Semiconductor Products, TRANSISTOR RF POWERSO-10 Original PDF

    PD55008 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN1294

    Abstract: PD55008 PD55008S 11 0741
    Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD55008 PD55008S PD55008 PowerSO-10RF. AN1294 PD55008S 11 0741

    power 12v

    Abstract: No abstract text available
    Text: DB-55008L-960 RF POWER amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 860 - 960MHz ■ Supply voltage: 12 ■ Output power: 7W ■ Efficiency: 46% - 55% ■ Load mismatch: 20:1


    Original     		PDF DB-55008L-960 PD55008L-E 960MHz DB-55008L-960 power 12v

    Untitled

    Abstract: No abstract text available
    Text: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-55008L-880 PD55008L DB-55008L-880 PD55008L

    Untitled

    Abstract: No abstract text available
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION


    Original     		PDF PD55008L PD55008L

    DB-55008L-470

    Abstract: PD55008L
    Text: DB-55008L-470 schematic 1+ 2- R2 B2 C3 C4 + B1 MSub FR4 H=60 mil C5 Vcc C1 D1 C2 R1 L1 C12 R3 C9 C10 TL5 C8 RFin TL1 C6 L2 TL2 TL3 TL4 LDMOS PD55008L TL6 C11 L3 C13 C7 RFout


    Original     		PDF DB-55008L-470 PD55008L PD55008L

    GRM42-6

    Abstract: 102J EEVHB1V100P EXCELDRC35C PD55008L-E
    Text: DB-55008L-235 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 215 - 235 MHz ■ Supply voltage: 13.6 V ■ Output power: 12 W ■ Power gain: 15.2 ± 0.8 dB


    Original     		PDF DB-55008L-235 PD55008L-E DB-55008L-235 GRM42-6 102J EEVHB1V100P EXCELDRC35C PD55008L-E

    SO42

    Abstract: STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier
    Text: RF Selection Guide STM i c r o e l e c t r o n i c s More Intelligent Solutions RF LDMOS HF to 1000 MHz Class AB Common Source - PowerSO-10RF VHF/UHF Mobile Radio and 900 MHz Cellular Applications P/N PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002


    Original     		PDF PowerSO-10RF PD54003 PD54008 PD55003 PD55008 PD55015 PD55025S PD57002 PD57006 PD57018 SO42 STM 160-30 "class AB Linear" hf PD55003 equivalent SD57045 linear amplifier 470-860 LT5232 VHF lna 30 to SD4100 SD2932 linear amplifier

    capacitor 330pF ATC

    Abstract: 8W 0.01% resistor NV SMD TRANSISTOR SMD 1206 RESISTOR 100 OHMS 3214W-1-103E A03TJ B09TJ BZX284C5V1 DB-55008-500 EXCELDRC35C
    Text: DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 500MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Efficiency: 48% - 54% ■ Load mismatch: 20:1


    Original     		PDF DB-55008-500 PD55008 500MHz DB-55008-500 capacitor 330pF ATC 8W 0.01% resistor NV SMD TRANSISTOR SMD 1206 RESISTOR 100 OHMS 3214W-1-103E A03TJ B09TJ BZX284C5V1 EXCELDRC35C

    PowerFLAT

    Abstract: No abstract text available
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs s t c u d o ) r s ( P t c e t u e d l o o r s P b e O t e l ) o s ( s t b c u O d o ) r s P ( t c e t u e l d o o r s P b O e t e l o s b O


    Original     		PDF PD55008L PD55008L PowerFLAT

    Untitled

    Abstract: No abstract text available
    Text: PD55008-E PD55008S-E RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs Features • Excellent thermal stability ■ Common source configuration ■ POUT = 8 W with 17dB gain @ 500 MHz/12.5 V ■ New RF plastic package PowerSO-10RF


    Original     		PDF PD55008-E PD55008S-E Hz/12 PowerSO-10RF PowerSO-10RF.

    1206 package resistor,1k resistor

    Abstract: philips smd 1206 resistor
    Text: DB-55008L-175 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 135 - 175 MHz SUPPLY VOLTAGE


    Original     		PDF DB-55008L-175 PD55008L DB-55008L-175 PD55008L 1206 package resistor,1k resistor philips smd 1206 resistor

    GRM42-6X7R103

    Abstract: ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v
    Text: DB-55008L-450 Component ID B1 B2 C1 C2,C3 C4 C6, C7 C8 C9 C11,C12 C13 C14 C15 C16 C17 L1,L2 L3,L4 L5 R1 R2 R3 R4 D1 TL1 TL2 TL3 TL4 TL5 TL6 PD55008L Board Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor


    Original     		PDF DB-55008L-450 PD55008L EXCELDRC35C 560JW 330JW 200JW 270JW 100JW GRM42-6C0G121J50 GRM42-6X7R103 ATC 17 25 ATC 220 capacitor 100b c14 c13 tyco RESISTOR POTENTIOMETER ATC 100A 100JW capacitor 10 pf zener 100B zener 1206 5.1 v

    102J

    Abstract: DB-55008L-960 EEVHB1V100P EXCELDRC35C GRM42-6 PD55008L PD55008L-E
    Text: DB-55008L-960 Evaluation board using PD55008L-E for UHF RFID reader Features • Excellent thermal stability ■ Frequency: 860 - 960 MHz ■ Supply voltage: 12 V ■ Output power: 7 W ■ Efficiency: 46 % - 55 % ■ Load mismatch: 20:1 ■ Beo free amplifier


    Original     		PDF DB-55008L-960 PD55008L-E DB-55008L-960 PD55008L-E, 102J EEVHB1V100P EXCELDRC35C GRM42-6 PD55008L

    grm42-6 cog 101

    Abstract: GRM42-6 102J EEVHB1V100P EXCELDRC35C PD55008L-E Diode smd L67 J747 J7-47 Philips BZX284C5V1
    Text: DB-55008L-318 RF power amplifier using 1 x PD55008L-E N-channel enhancement-mode lateral MOSFETs Preliminary Data Features • Excellent thermal stability ■ Frequency: 225 - 318 MHz ■ Supply voltage: 13.6 V ■ Output power: 8 W ■ Power gain: 13.5 ± 0.7 dB


    Original     		PDF DB-55008L-318 PD55008L-E DB-55008L-318 grm42-6 cog 101 GRM42-6 102J EEVHB1V100P EXCELDRC35C PD55008L-E Diode smd L67 J747 J7-47 Philips BZX284C5V1

    J-STD-020B

    Abstract: PD55008L 0951
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY ADVANCED DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION


    Original     		PDF PD55008L PD55008L J-STD-020B 0951

    rf power amplifier circuit by 400-470mhz

    Abstract: DB-55008L-470 JESD97 PD55008L
    Text: DB-55008L-470 RF POWER amplifier using 1 x PD55008L N-channel enhancement-mode lateral MOSFETs Feature • Excellent thermal stability ■ Frequency: 400 - 470MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Power gain: 16.7 ± 2.0dB ■ Efficiency: 49% - 61%


    Original     		PDF DB-55008L-470 PD55008L 470MHz DB-55008L-470 rf power amplifier circuit by 400-470mhz JESD97 PD55008L

    104k x7r 50

    Abstract: murata COG capacitor 104K capacitor GRM42-6 COG cog 100 potentiometer resistor 102J GRM42-6 B2 Zener capacitor 104k x7r 50
    Text: DB-55008L-235 BOM Component ID B1 B2 C1, C2 C3 C4 C5 C6, C12 C7 C8 C9, C10 C11 D1 L1 L2 L3 R1 R2 R3 R4 TL1 TL2 TL3 TL4 TL5 TL6 TL7 PD55008L-E Description Ferrite Bead Ferrite Bead Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor Capacitor


    Original     		PDF DB-55008L-235 PD55008L-E OD110 EXCELDRC35C GRM42-6 EEVHB1V100P 221JW 104k x7r 50 murata COG capacitor 104K capacitor GRM42-6 COG cog 100 potentiometer resistor 102J B2 Zener capacitor 104k x7r 50

    transistor Bs 998

    Abstract: AN1294 PD55008 PD55008S
    Text: PD55008 PD55008S RF POWER TRANSISTORS The LdmoST Plastic FAMILY N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • NEW RF PLASTIC PACKAGE DESCRIPTION


    Original     		PDF PD55008 PD55008S PD55008 PowerSO-10RF. transistor Bs 998 AN1294 PD55008S

    XPD55008

    Abstract: No abstract text available
    Text: DB-55008-500 RF POWER amplifier using 1 x PD55008 N-Channel enhancement-mode lateral MOSFETs General feature • Excellent thermal stability ■ Frequency: 400 - 500MHz ■ Supply voltage: 12.5V ■ Output power: 8W ■ Efficiency: 48% - 54% ■ Load mismatch: 20:1


    Original     		PDF DB-55008-500 PD55008 500MHz DB-55008-500 XPD55008

    SO42

    Abstract: sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100
    Text: Selection Guide April 2000 VHF/UHF and 900 MHz Cellular Applications TYPE FREQ. MHz POUT (W) Gain min. (dB) Vcc (V) Class (%) Efficiency (°C/W) RTHj-c PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S 520 520 520 520 520


    Original     		PDF PD54003 PD54008 PD55003* PD55008 PD55015 PD57002* PD57006* PD57018 PD57030S PD57045S SO42 sd1393 Transistor amplifier SD1393 SD1470 sd1393 01 sd2931 fm SD57045 LT5232 sd1446 SD4100

    panasonic capacitor date codes

    Abstract: panasonic capacitor date code 142-0701-801 3214W-1-103E DB-55008L-880 EEVHB1V100P EXCELDRC35C GRM426C0G102J50 GRM426C0G121J50 GRM426X7R104K50
    Text: DB-55008L-880 RF POWER AMPLIFIER USING 1 x PD55008L PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs Figure 1. Demo Board Picture GENERAL FEATURES • ■ ■ ■ ■ ■ ■ ■ EXCELLENT THERMAL STABILITY FREQUENCY 800 - 880 MHz SUPPLY VOLTAGE


    Original     		PDF DB-55008L-880 PD55008L DB-55008L-880 panasonic capacitor date codes panasonic capacitor date code 142-0701-801 3214W-1-103E EEVHB1V100P EXCELDRC35C GRM426C0G102J50 GRM426C0G121J50 GRM426X7R104K50

    PD55008

    Abstract: PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E AN1294
    Text: PD55008-E PD55008S-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ New RF plastic package


    Original     		PDF PD55008-E PD55008S-E 500MHz PowerSO-10RF PD55008 PowerSO-10RF. PD5500and PD55008-E PD55008S PD55008S-E PD55008STR-E PD55008TR-E AN1294

    Untitled

    Abstract: No abstract text available
    Text: PD55008L RF POWER TRANSISTORS The LdmoST Plastic FAMILY PRELIMINARY DATA N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs • EXCELLENT THERMAL STABILITY • COMMON SOURCE CONFIGURATION • POUT = 8 W with 17 dB gain @ 500 MHz / 12.5V • INTEGRATED ESD PROTECTION


    Original     		PDF PD55008L PD55008L

    JESD97

    Abstract: J-STD-020B PD55008L PD55008L-E
    Text: PD55008L-E RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs General features • Excellent thermal stability ■ Common source configuration ■ POUT = 8W with 17dB gain @ 500MHz / 12.5V ■ Integrated ESD protection ■


    Original     		PDF PD55008L-E 500MHz 2002/95/EC PD55008L-E JESD97 J-STD-020B PD55008L