STL28NF3LL
Abstract: No abstract text available
Text: STL28NF3LL N-CHANNEL 30V - 0.0055Ω - 28A PowerFLAT LOW GATE CHARGE STripFET™ MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STL28NF3LL 30 V < 0.0065 Ω 28 A • ■ ■ TYPICAL RDS(on) = 0.0055Ω IMPROVED DIE-TO-FOOTPRINT RATIO VERY LOW PROFILE PACKAGE
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STL28NF3LL
STL28NF3LL
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13N60M2
Abstract: STL13N60M2
Text: STL13N60M2 N-channel 600 V, 0.39 Ω typ., 7 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID STL13N60M2 650 V 0.42 Ω 7A • Extremely low gate charge • Lower RDS(on) x area vs previous generation
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STL13N60M2
DocID026363
13N60M2
STL13N60M2
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Untitled
Abstract: No abstract text available
Text: STL9N60M2 N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS on max STL9N60M2 ID 0.86 Ω 650 V 4.8 A • Extremely low gate charge 1
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STL9N60M2
DocID025655
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Untitled
Abstract: No abstract text available
Text: STL13DP10F6 Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet - production data Features 1 4 1 Order code VDS RDS on max. ID STL13DP10F6 100 V 0.18 Ω 3.3 A • RDS(on) * Qg industry benchmark
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STL13DP10F6
DocID023936
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Untitled
Abstract: No abstract text available
Text: STL9N3LLH5 N-channel 30 V, 0.015 Ω, 9 A, PowerFLAT 3.3x3.3 STripFET™ V Power MOSFET Features Type VDSS RDS(on) max ID STL9N3LLH5 30 V < 0.019 Ω 9 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark ■ Extremely low on-resistance RDS(on)
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Untitled
Abstract: No abstract text available
Text: STL8NH3LL N-channel 30 V, 0.012 Ω, 8 A - PowerFLAT 3.3x3.3 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL8NH3LL 30V <0.015Ω 8A (1) • Improved die-to-footprint ratio ■ Very low profile package (1mm max) ■ Very low thermal resistance
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2002/95/EC
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JESD97
Abstract: L50NH3LL STL50NH3LL
Text: STL50NH3LL N-channel 30 V - 0.011 Ω - 13 A - PowerFLAT 6x5 ultra low gate charge STripFET™ Power MOSFET Features Type VDSS RDS(on) ID STL50NH3LL 30V <0.013Ω 13A (4) • Improved die-to-footprint ratio ■ Very low profile package (1 mm max) ■
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STL50NH3LL
JESD97
L50NH3LL
STL50NH3LL
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JESD97
Abstract: L100NH3LL STL100NH3LL
Text: STL100NH3LL N-channel 30V - 0.0032Ω - 25A - PowerFLAT 6x5 STripFET™ III Power MOSFET General features Type VDSS RDS(on) ID STL100NH3LL 30V <0.0035Ω 25A (1) 1. The value is rated according Rthj-pcb • Improved die-to-footprint ratio ■ Very low profile package (1mm max)
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STL100NH3LL
JESD97
L100NH3LL
STL100NH3LL
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STL9NK30Z
Abstract: No abstract text available
Text: STL9NK30Z N-CHANNEL 300V - 0.36Ω - 9A PowerFLAT Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS on ID (1) Pw (1) STL9NK30Z 300 V < 0.4 Ω 9A 75 W • ■ ■ ■ ■ ■ ■ TYPICAL RDS(on) = 0.36 Ω EXTREMELY HIGH dv/dt CAPABILITY IMPROVED ESD CAPABILITY
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STL9NK30Z
STL9NK30Z
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Untitled
Abstract: No abstract text available
Text: STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω typ., 11 A STripFET V Power MOSFET in a PowerFLAT™ 5x6 double island Datasheet — production data Features Order code VDSS RDS on max. ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb
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STL40DN3LLH5
STL40DN3LLH5
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STL8DN10LF3
Abstract: N-CHANNEL ENHANCEMENT MODE POWER MOSFET
Text: STL8DN10LF3 Dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET III Power MOSFET in PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDSS RDS on max ID STL8DN10LF3 100 V < 35 mΩ 7.8 A (1) 1. The value is rated according to Rthj-pcb
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STL8DN10LF3
STL8DN10LF3
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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3NM60N
Abstract: STL3NM60N ST -MAR 913
Text: STL3NM60N N-channel 600 V, 1.5 Ω, 2.2 A MDmesh II Power MOSFET in PowerFLAT™ 3.3 x 3.3 HV package Datasheet — preliminary data Features Order code RDS on max. STL3NM60N 1 ID < 1.8 Ω 2 3 4 (1) 2.2 A 1. The value is rated according to Rthj-case 8 5
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STL3NM60N
STL3NM60N
3NM60N
ST -MAR 913
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Untitled
Abstract: No abstract text available
Text: STL130N8F7 N-channel 80 V, 4 mΩ, 24 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data Features Order code VDS RDS on max ID PTOT STL130N8F7 80 V 4.6 mΩ (VGS=10 V) 24 A 5W • Ultra low on-resistance 1
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STL130N8F7
DocID023889
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Untitled
Abstract: No abstract text available
Text: STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Type VDSS STL100N10F7 100 V RDS on max PTOT ID 0.0073 Ω 19 A 5W 2 3 • Ultra low on-resistance
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STL100N10F7
DocID023656
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Untitled
Abstract: No abstract text available
Text: STL105NS3LLH7 N-channel 30 V, 0.0032 Ω typ., 27 A STripFET VII DeepGATE™ Power MOSFETs plus monolithic Schottky in a PowerFLAT™ 5x6 Datasheet - preliminary data Features Order code VDS RDS on max ID STL105NS3LLH7 30 V 0.0039 Ω 27 A • Very low on-resistance
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STL105NS3LLH7
DocID024624
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Untitled
Abstract: No abstract text available
Text: STL160N3LLH6 N-channel 30 V, 0.0011 Ω typ., 45 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet − production data Features Order code VDSS RDS on max ID STL160N3LLH6 30 V 0.0013 Ω 45 A (1) 1. The value is rated according Rthj-pcb
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STL160N3LLH6
DocID18223
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Untitled
Abstract: No abstract text available
Text: STL6P3LLH6 P-channel 30 V, 0.024 Ω typ., 6 A STripFET VI DeepGATE™ Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − preliminary data Features Order code VDS RDS on max ID PTOT STL6P3LLH6 30 V 0.03 Ω 6A 2.9 W • RDS(on) * Qg industry benchmark
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DocID023668
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Untitled
Abstract: No abstract text available
Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code VDS STL40C30H3LL N-channel RDS(on) max ID 0.021 Ω @ 10 V 10 A
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STL40C30H3LL
DocID023874
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Untitled
Abstract: No abstract text available
Text: STL4P3LLH6 P-channel 30 V, 0.04 Ω typ., 4 A STripFET VI DeepGATE™ Power MOSFET in PowerFLAT 2x2 package Datasheet - preliminary data Features 1 2 3 5 2 4 3 VDSS RDS on max. ID STL4P3LLH6 30 V 0.06 Ω at 10 V 4A • RDS(on) * Qg industry benchmark • Extremely low on-resistance RDS(on)
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DocID024616
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Untitled
Abstract: No abstract text available
Text: STL8N80K5 N-channel 800 V, 0.80 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)
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STL8N80K5
DocID024079
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Untitled
Abstract: No abstract text available
Text: STL220N3LLH7 N-channel 30 V, 0.00081 Ω typ., 50 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - preliminary data Features Order code VDS RDS on max ID STL220N3LLH7 30 V 0.0011 Ω 50 A • Very low on-resistance 1 • Very low Qg
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STL220N3LLH7
AM15540v2
DocID024732
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Untitled
Abstract: No abstract text available
Text: STL8N80K5 N-channel 800 V, 0.80 Ω typ., 4.5 A Zener-protected SuperMESH 5 Power MOSFET in a PowerFLAT™ 5x6 VHV package Datasheet − production data Features Order code VDS RDS on max. ID STL8N80K5 800 V 0.95 Ω 4.5 A • Outstanding RDS(on)*area 1 • Worldwide best FOM (figure of merit)
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STL8N80K5
DocID024079
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Untitled
Abstract: No abstract text available
Text: STL11N4LLF5 N-channel 40 V, 9.1 mΩ typ., 15 A STripFET V Power MOSFET in a PowerFLAT™ 3.3 x 3.3 package Datasheet − production data Features Order code VDS RDS on max ID STL11N4LLF5 40 V 9.7 mΩ 15 A • Low gate charge ■ Very low on-resistance ■
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STL11N4LLF5
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Untitled
Abstract: No abstract text available
Text: STL8DN10LF3 Automotive-grade dual N-channel 100 V, 25 mΩ typ., 7.8 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet — production data Features Order code VDS RDS on max ID STL8DN10LF3 100 V 35 mΩ 7.8 A (1) 1. The value is rated according Rthj-pcb
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STL8DN10LF3
AEC-Q101
DocID023009
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