Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    B427MM Search Results

    B427MM Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    18-12 049 transistor

    Abstract: k 1094 transistor NE94432 0DD25 SIS 1124
    Text: NEC/ CALIFORNIA SbE J> • b427Mm DQOBSlb 2*15 BNECC NEC T NPN SILICON OSCILLATOR AND MIXER TRANSISTOR 7 NE94432 OUTLINE 32 TO-92 (Units in mm) HIGH GAIN BANDWIDTH PRODUCT: I t = 2000 M Hz TYP • M OUTLINE DIMENSIONS FEATURES • 3 LOW COLLECTOR TO BASE TIME CONSTANT:


    OCR Scan     		PDF b427Mm NE94432 NE94432 18-12 049 transistor k 1094 transistor 0DD25 SIS 1124

    2SK571

    Abstract: NE720 NE72084 NE72000 NE72089 2SK571 equivalent ga 132 2SK57-1
    Text: NEC/ b427mM QQ022TD 317 «NE CC SbE D CALIFORNIA NEC GENERAL PURPOSE GaAs MESFET NE720 SERIES OUTLINE DIMENSIONS FEATURES • LOW COST Units in mm NE72000 (CHIP) (Units In pm) • LOW NOISE FIGURE 0.8 dB at 4 GHz 1.7 dB at 8 GHz i 35 • HIGH ASSOCIATED GAIN


    OCR Scan     		PDF b427mM QQ022TD NE720 NE72000 Rn/50 NE72000 2SK571 NE72084 NE72089 2SK571 equivalent ga 132 2SK57-1

    2SC2150

    Abstract: NE57835 NE578 nec NE57800 NE57807 2SC215 NE AND micro-X NE578 transistor NEC ka 42
    Text: NEC/ CALIFORNIA NEC 5 bE D b427414 000540b 4bS HINE CC NE57800 NE57807 NE57835 NPN SILICON MICROWAVE TRANSISTOR "í-si-n - FEATURES DESCRIPTION AND APPLICATIONS • HIGH GAIN BANDWIDTH PRODUCT: fr = 6 GHz The NE578 series of NPN silicon transistors is designed for use


    OCR Scan     		PDF bM27M14 QQQE40b NE57800 NE57807 NE57835 NE57800 NE578 2SC2150 NE57835 NE578 nec 2SC215 NE AND micro-X transistor NEC ka 42