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    BA60 diode

    Abstract: Diode ba60 STP17N05L 17N05L TRANSISTOR BH RW 17n05
    Text: SGS-THOMSON »[R K Q itL C iO T «! S TP 17N05L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP17N 05L . • ■ ■ . . . ■ V d ss RDS(on Id 50 V 0 .1 2 n 17 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C


    OCR Scan     		PDF 17N05L STP17N O-220 GC364 BA60 diode Diode ba60 STP17N05L 17N05L TRANSISTOR BH RW 17n05

    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


    OCR Scan     		PDF