STLT20
Abstract: STLT20FI
Text: STLT20 STLT20FI SGS-THOMSON N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STLT20 S TLT20FI V dss R ds oü 60 V 60 V 0 .1 5 0 .1 5 n a Id 15 A 10 A . . . . . . . AVALANC HE RUG G EDN ESS TECHNO LO G Y 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA A T 100°C
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STLT20
STLT20FI
TLT20FI
O-220
ISOWATT220
STLT20/FI
GC2427D
GC36B7C
STLT20FI
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BA60 diode
Abstract: Diode ba60 STP17N05L 17N05L TRANSISTOR BH RW 17n05
Text: SGS-THOMSON »[R K Q itL C iO T «! S TP 17N05L N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE STP17N 05L . • ■ ■ . . . ■ V d ss RDS(on Id 50 V 0 .1 2 n 17 A AVALANCHE RUGGEDNESS TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100°C
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17N05L
STP17N
O-220
GC364
BA60 diode
Diode ba60
STP17N05L
17N05L
TRANSISTOR BH RW
17n05
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TP6N60
Abstract: 6N60
Text: *57 SGS-THOMSON iL iO M K I M T P 6 N 60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE M TP6N60 V dss R DS on Id 600 V < 1.2 a 6.8 A . TYPICAL RDs(on) = 1 f i • AVALANCHE RUGGED TECHNOLOGY . 100% AVALANCHE TESTED . REPETITIVE AVALANCHE DATA AT 100°C
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TP6N60
TP6N60
6N60
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