Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220 „ DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

6N-60

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60Z Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

SSS6N60

Abstract: ADE 443 TI MOSFET 6n60 6n60 K300 SSS6N55
Contextual Info: N-CHANNEL POWER MOSFETS SSS6N55/6N60 FEATU RES • A • • 9 • • • TO-270* Low er Ros com* 1im ffMp ro /Nvo hiAo<4 a i •«eA ru rn••gAgAeAd n eAsAsA inMdrAu••c tiv F es! s w itc h in g tim e s R ugged p o ly s ilic o n g a te c e il s tru c tu re

SGW6N60UF

Contextual Info: SGW 6N60UF N-CHANNEL IG B T FE A TU R ES * High Speed Switching * Low Saturation Voltage : V CE sat = 2.1 V (@ lc=3A) * High Input Impedance A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters Robotics , Servo Controls Power Supply

6N60

Abstract: SSM6N55
Contextual Info: _98D_0 5319 - 7964.142 SAMSUNG SEMICONDUCTOR INC. DE I TTtiM m E Q0QS3n 3 | ‘ ' . D _ 7 ~ -3 7 ^ / 2 N-CHANNEL PO WER MOSFETS SSM6N55/6N60 FEATURES Low Ros on at high voltage Improved inductive ruggedness Excellent high voltage stability Fast switching times

6n55

Abstract: power mosfet 6n60 TH6N55 6n55 data
Contextual Info: MOTOROLA SEM ICONDUCTOR TECHNICAL DATA M T H 6N 55 M T H 6 N 60 M TM 6N60 Designer's Data Sheet P o w e r Field E ffe ct T ra n sisto r N-Channel Enhancement-Mode Silicon Gate TM OS These TM O S Pow er FETs are desig n ed fo r h ig h vo ltag e , high speed p o w e r sw itch in g a p p lica tio n s such as sw itch in g regulators,

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60-P Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60-P is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

6n60a

Abstract: 6n60b 6n60l 6n60 6N60G 6n60 data 6N60-B 6N60L TO-220F 6N60L TO-251
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

6n60a

Abstract: 6n60b 6n60 MOSFET 6n60 power mosfet 6n60 6n60 data 6N60-B 6n60 equivalent 6N60L TO-220F MOSFET+6n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60K-MT Preliminary Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

igbt 200V 4A

Abstract: SGW6N60UFD 200v 1.5v 3a diode
Contextual Info: SGW 6N60UFD FE A TU R ES N-CHANNEL IG B T D2-PAK * High Speed Switching * Low Saturation Voltage : V CE sat = 2.1 V (@ lc=3A) * High Input Impedance *CO-PAK, IGBT with FRD : Trr = 35nS (typ.) A P P LIC A TIO N S * * * * * AC & DC Motor controls General Purpose Inverters

SSP6N60

Abstract: 6N60 MOSFET 6n60
Contextual Info: N-CHANNEL POWER MOSFETS SSP6N55/6N60 FEATURES • Lower Ros • • • • • • ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

6N60Z

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60Z Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

6n60 data

Abstract: UTC6N60 6N60L TO-220F
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220 TO-251 „ DESCRIPTION The UTC 6N60 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

6n60c

Abstract: mosfet 6n60c 6n60
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60-C Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60-C is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and

6N60

Abstract: ssp6n SSP6N60
Contextual Info: SSP6N55/6N60 SSH6N55/6N60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONICTECHNOLOGIESCO., LTD 6N60Z Power MOSFET 6 .2 A, 6 0 0 V N -CH AN N EL POWER M OSFET  DESCRI PT I ON The UTC 6N60Z is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 6N60 Power MOSFET 6.2A, 600V N-CHANNEL POWER MOSFET 1 1 TO-220F TO-220  DESCRIPTION The UTC 6N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

6N60

Abstract: 6n60 equivalent 6n60 data
Contextual Info: E 6N60 VDSS=600V; ID=6.0A; RDS ON =1.2Ω MOSFET Die in Wafer Form 100% Tested at Probe Key Electrical Characteristics (TO­220 package) Parameter V(BR)DSS RDS(on) VGS(th) IDSS IGSS Tj TSTG Description Drain­to­Source Breakdown Voltage