SSP6N Search Results

Contextual Info: Advanced SSP6N80A Power MOSFET FEATURES - 800 V ^ D S o n = 2.0 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V B Low Rds(0n) ■ 1-472 £1 (Typ.) CD

Contextual Info: SSP6N70A A dvanced Power MOSFET FEATURES ^DSS — 700 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ^DS on = 1.8 Q < CD II _p ■ ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V

SSP6N60

Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
Contextual Info: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125

SSP6N60

Abstract: SSP6N55 250M
Contextual Info: N-CHANNEL POWER MOSFETS SSP6N60/55 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability

Contextual Info: Advanced SSP6N90A Power MOSFET FEATURES - 900 V ^ D S o n = 2.3 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.) CD

Contextual Info: Advanced SSP6N70A Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V B Low Rds(0n) ■ "I -552 £1 (Typ.) CD Rugged Gate Oxide Technology

SSP6N80A

Contextual Info: SSP6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V n Avalanche Rugged Technology RDS on = 2.0 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n Lower Leakage Current : 25 A (Max.) @ VDS = 800V

mosfet for 900V, 6A

Abstract: SSP6N90A
Contextual Info: Advanced SSP6N90A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge D S S — ^ D S o n = lD = ■ E xtended S afe O pe ra ting A rea

SSP6N70A

Contextual Info: Advanced SSP6N70A P o w e r MOSFET FEATURES D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 6 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea

SSP6N70

Abstract: ssp6n70a
Contextual Info: SSP6N70A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA Max. @ VOS= 700V ^DS(on) = 1 .8 & < CO II _o • ■

Contextual Info: SSP6N80A Advanced Power MOSFET BVdss = 800 V FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 u A Max. @ Vpg = 600V Low Ros(on) •1.472 Q (Typ.)

SSP6N80A

Contextual Info: SSP6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 2.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V

mosfet yb

Abstract: SSP6N80A
Contextual Info: Advanced SSP6N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — ^ D S o n = lD = ■ E xtended S afe O pe ra ting A rea

SSP6N60

Abstract: 6N60 MOSFET 6n60
Contextual Info: N-CHANNEL POWER MOSFETS SSP6N55/6N60 FEATURES • Lower Ros • • • • • • ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

SSP6N60

Abstract: 250M SSP6N55 mosfet 600V 6A N-CHANNEL
Contextual Info: N-CHANNEL POWER MOSFETS SSP6N60/55 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability

Contextual Info: SSP6N80A A d va n ce d Power MOSFET B ^ dss - 800 V Rugged Gate Oxide Technology ^DS on = 2.0 Q • Lower Input Capacitance < CO II _Q FEATURES ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Avalanche Rugged Technology ■ ■ Lower Leakage Current : 25 fiA (Max.) @ VDS = 800V

Contextual Info: SSP6N90A A d va n ce d Power MOSFET FEATURES - b v dss 900 V • Avalanche Rugged Technology ^DS on = 2 .3 Q ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 i2(Typ.)

ssp6n70a

Contextual Info: SSP6N70A Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS on = 1.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 700V

6N60

Abstract: ssp6n SSP6N60
Contextual Info: SSP6N55/6N60 SSH6N55/6N60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability

SSP6N90A

Contextual Info: SSP6N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 2.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V

transistor NEC K2500

Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
Contextual Info: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

STK411-230E

Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for