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    Samsung Semiconductor SSP6N60A

    POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 600V, 1.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SSP6N60A 1,592
    • 1 $6
    • 10 $6
    • 100 $6
    • 1000 $2.2
    • 10000 $2.1
    		Buy Now

    Southern Electronics SSP6N60A

    POWER FIELD-EFFECT TRANSISTOR, 6A I(D), 600V, 1.2OHM, 1-ELEMENT, N-CHANNEL, SILICON, METAL-OXIDE SEMICONDUCTOR FET, TO-220AB
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components SSP6N60A 30
    • 1 $6
    • 10 $3
    • 100 $3
    • 1000 $3
    • 10000 $3
    		Buy Now

    Samsung Electronics Co. Ltd SSP6N60A

    IN STOCK SHIP TODAY
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Component Electronics, Inc SSP6N60A 20
    • 1 $3.85
    • 10 $3.85
    • 100 $2.88
    • 1000 $2.5
    • 10000 $2.5
    		Buy Now
    IBS Electronics SSP6N60A 7 7
    • 1 -
    • 10 $1.21829
    • 100 $1.21829
    • 1000 $1.21829
    • 10000 $1.21829
    		Buy Now

    SSP6N Datasheets (17)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    SSP6N55 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSP6N55 Unknown FET Data Book Scan PDF
    SSP6N55 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    SSP6N60 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    SSP6N60 Unknown FET Data Book Scan PDF
    SSP6N60 Samsung Electronics N-CHANNEL POWER MOSFETS Scan PDF
    SSP6N60 Samsung Electronics N-Channel Power MOSFET Scan PDF
    SSP6N70A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSP6N70A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSP6N70A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    SSP6N80A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSP6N80A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSP6N80A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSP6N80A Fairchild Semiconductor Advanced Power MOSFET Scan PDF
    SSP6N90A Fairchild Semiconductor Advanced Power MOSFET Original PDF
    SSP6N90A Toshiba Power MOSFETs Cross Reference Guide Original PDF
    SSP6N90A Fairchild Semiconductor Advanced Power MOSFET Scan PDF

    SSP6N Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    SSP6N80A

    Abstract: No abstract text available
    Text: SSP6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V n Avalanche Rugged Technology RDS on = 2.0 Ω n Rugged Gate Oxide Technology n Lower Input Capacitance ID = 6 A n Improved Gate Charge n Extended Safe Operating Area TO-220 n Lower Leakage Current : 25 A (Max.) @ VDS = 800V


    Original     		PDF SSP6N80A O-220 SSP6N80A

    SSP6N80A

    Abstract: No abstract text available
    Text: SSP6N80A Advanced Power MOSFET FEATURES BVDSS = 800 V Avalanche Rugged Technology RDS on = 2.0 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 800V


    Original     		PDF SSP6N80A O-220 SSP6N80A

    ssp6n70a

    Abstract: No abstract text available
    Text: SSP6N70A Advanced Power MOSFET FEATURES BVDSS = 700 V Avalanche Rugged Technology RDS on = 1.8 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 700V


    Original     		PDF SSP6N70A O-220 ssp6n70a

    SSP6N90A

    Abstract: No abstract text available
    Text: SSP6N90A Advanced Power MOSFET FEATURES BVDSS = 900 V Avalanche Rugged Technology RDS on = 2.3 Ω Rugged Gate Oxide Technology Lower Input Capacitance ID = 6 A Improved Gate Charge Extended Safe Operating Area TO-220 Lower Leakage Current : 25 µA (Max.) @ VDS = 900V


    Original     		PDF SSP6N90A O-220 SSP6N90A

    transistor NEC K2500

    Abstract: nec k2500 NEC K2500 Transistor component NEC K2500 mosfet CD4558 cq met t3.15A 250V k2500 N-Channel MOSFET c5042f TO-92 78L05 voltage regulator pin configuration i ball 450 watt smps repairing
    Text: A merican Gaming and Electronics, Inc. represents over 200 vendors and carries thousands of items. This catalog is just a partial listing of our products. If for any reason, you do not see the item s you are searching for, please call your local sales representative. The sales


    Original     		PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Text: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


    Original     		PDF 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 sn76131 tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    STK411-230E

    Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
    Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for


    Original     		PDF STVDST-01 CAT22 STK411-230E STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSP6N80A Power MOSFET FEATURES - 800 V ^ D S o n = 2.0 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 800V B Low Rds(0n) ■ 1-472 £1 (Typ.) CD


    OCR Scan     		PDF SSP6N80A

    Untitled

    Abstract: No abstract text available
    Text: SSP6N70A A dvanced Power MOSFET FEATURES ^DSS — 700 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ^DS on = 1.8 Q < CD II _p ■ ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V


    OCR Scan     		PDF SSP6N70A 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    SSP6N60

    Abstract: SSP5N70 IRF9511 IRF9Z34 ssp5n80 ssp7n55 IRF9521 SSP4N70 SSP3N70 IRF9631
    Text: MOSFETs FUNCTION GUIDE 10-220 N-CHANNEL Continued Part Number SSP4N55 SSP6N55 BVossfV) lD(onj(A) RDs(on)(8) R0jc(K/W) PDfWatt) 550 4.00 6.00 2.500 1.67 1.00 75 125 0.90 140 302 307 2.500 1.800 1.67 1.200 0.90 75 125 140 302 307 5.000 3.500 2.500 1.67 75 125


    OCR Scan     		PDF SSP4N55 SSP6N55 SSP7N55 SSP4N60 SSP6N60 SSP7N60 SSP3N70 SSP4N70 SSP5N70 SSP3N80 IRF9511 IRF9Z34 ssp5n80 IRF9521 IRF9631

    SSP6N60

    Abstract: SSP6N55 250M
    Text: N-CHANNEL POWER MOSFETS SSP6N60/55 FEATURES • • • • • • • Lower R ds on Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high temperature reliability


    OCR Scan     		PDF SSP6N60/55 SSP6N60 SSP6N55 O-220 250M

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSP6N90A Power MOSFET FEATURES - 900 V ^ D S o n = 2.3 Q. BVDSS • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 900V ■ Low RDS(ON) : 1.829 £1 (Typ.) CD


    OCR Scan     		PDF SSP6N90A

    Untitled

    Abstract: No abstract text available
    Text: Advanced SSP6N70A Power MOSFET FEATURES BVDSS • Lower Input Capacitance ■ Improved Gate Charge ^ D S o n = ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |^A (Max.) @ V DS = 700V B Low Rds(0n) ■ "I -552 £1 (Typ.) CD Rugged Gate Oxide Technology


    OCR Scan     		PDF SSP6N70A

    SSP6N70A

    Abstract: No abstract text available
    Text: Advanced SSP6N70A P o w e r MOSFET FEATURES D S S — • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ^D S o n = ■ Lo w e r Input C a pa citance lD = 6 A ■ Im proved G ate C harge ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSP6N70A O-220 SSP6N70A

    SSP6N70

    Abstract: ssp6n70a
    Text: SSP6N70A Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 mA Max. @ VOS= 700V ^DS(on) = 1 .8 & < CO II _o • ■


    OCR Scan     		PDF SSP6N70A O-220 SSP6N70 ssp6n70a

    Untitled

    Abstract: No abstract text available
    Text: SSP6N80A Advanced Power MOSFET BVdss = 800 V FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 25 u A Max. @ Vpg = 600V Low Ros(on) •1.472 Q (Typ.)


    OCR Scan     		PDF SSP6N80A

    mosfet yb

    Abstract: SSP6N80A
    Text: Advanced SSP6N80A P o w e r MOSFET FEATURES BV • A valan che R ugged T ech n o lo g y ■ R ugged G ate O xide T e ch n o lo g y ■ Lo w e r Input C a pa citance ■ Im proved G ate C harge — ^ D S o n = lD = ■ E xtended S afe O pe ra ting A rea


    OCR Scan     		PDF SSP6N80A mosfet yb SSP6N80A

    SSP6N60

    Abstract: 6N60 MOSFET 6n60
    Text: N-CHANNEL POWER MOSFETS SSP6N55/6N60 FEATURES • Lower Ros • • • • • • ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF SSP6N55/6N60 SSP6N55 SSP6N60 SSP6N60 SSP6N55/60 6N60 MOSFET 6n60

    Untitled

    Abstract: No abstract text available
    Text: SSP6N90A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |aA Max. @ yos = 900V ■ Low RDS(ON) : 1.829 Q. (Typ.)


    OCR Scan     		PDF SSP6N90A

    SSP6N60

    Abstract: 250M SSP6N55 mosfet 600V 6A N-CHANNEL
    Text: N-CHANNEL POWER MOSFETS SSP6N60/55 FEATURES TO-220 • Lower R d s <o n • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Lower input capacitance • Extended safe operating area • Improved high temperature reliability


    OCR Scan     		PDF SSP6N60/55 O-220 SSP6N60 SSP6N55 GG2fl41G 250M mosfet 600V 6A N-CHANNEL

    Untitled

    Abstract: No abstract text available
    Text: SSP6N80A A d va n ce d Power MOSFET B ^ dss - 800 V Rugged Gate Oxide Technology ^DS on = 2.0 Q • Lower Input Capacitance < CO II _Q FEATURES ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Avalanche Rugged Technology ■ ■ Lower Leakage Current : 25 fiA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSP6N80A 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP6N90A A d va n ce d Power MOSFET FEATURES - b v dss 900 V • Avalanche Rugged Technology ^DS on = 2 .3 Q ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 900V ■ Low RDS(ON) : 1.829 i2(Typ.)


    OCR Scan     		PDF SSP6N90A 003b32fl O-220 7Tb4142 DD3b33D

    6N60

    Abstract: ssp6n SSP6N60
    Text: SSP6N55/6N60 SSH6N55/6N60 N-CHANNEL POWER MOSFETS FEATURES • • • • • • • TO -220 Lower R d s ON Improved inductive ruggedness Fast switching times Rugged polysilicon gate cell structure Lower input capacitance Extended safe operating area Improved high tem perature reliability


    OCR Scan     		PDF SSP6N55/6N60 SSH6N55/6N60 SSP6N55 SSH6N55 6N60 ssp6n SSP6N60