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    Untitled

    Abstract: No abstract text available
    Text: SSP1N60A Advanced Power MOSFET FEATURES B ^D SS • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 600V — 600 V


    OCR Scan     		PDF SSP1N60A 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP7N80A Advanced Power MOSFET FEATURES B V DSS - 800 V • Avalanche Rugged Technology ■ Lower Input Capacitance ■ ■ Improved Gate Charge Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. Low RDS(ON) ^DS(on) = 1.8 a < h- Rugged Gate Oxide Technology


    OCR Scan     		PDF SSP7N80A O-220 G04G4S4 003b32fl 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP6N70A A dvanced Power MOSFET FEATURES ^DSS — 700 V Avalanche Rugged Technology • Rugged Gate Oxide Technology ■ Lower Input Capacitance ^DS on = 1.8 Q < CD II _p ■ ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 700V


    OCR Scan     		PDF SSP6N70A 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    IC 74142

    Abstract: No abstract text available
    Text: SGP6N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=3A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast


    OCR Scan     		PDF SGP6N60UF 3t17b2 003b32fl O-220 IC 74142

    Untitled

    Abstract: No abstract text available
    Text: SSP4N80A A d v a n c e d Power MOSFET FEATURES = 800 V B Vdss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 800V


    OCR Scan     		PDF SSP4N80A 7Tb4145 004G3Ã 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V


    OCR Scan     		PDF SSP5N80A iti4142 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    5d3 diode

    Abstract: IRLZ44A 5d3 N-Channel A/SMD 5d3 diode
    Text: IRLZ44A Advanced Power MOSFET FEATURES BVdss = 60 V • Logic-Level Gate Drive ■ Avalanche Rugged Technology ■ ■ ■ ■ ■ ■ ^DS on = 0 -0 2 5 Q Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area


    OCR Scan     		PDF IRLZ44A O-220 71b4m2 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D 5d3 diode IRLZ44A 5d3 N-Channel A/SMD 5d3 diode

    GG3C

    Abstract: SGP23N60UF S1S20 tl 464
    Text: SGP23N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : V CE sat = 2.2 V (at lc=12A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast


    OCR Scan     		PDF SGP23N60UF 30-OTO T0-220 QQ3b32fl O-220 500MIN D3b33D GG3C SGP23N60UF S1S20 tl 464

    74142

    Abstract: SGP40N60UF INDUCTION LAMP ballast lc21
    Text: SGP40N60UF N-CHANNEL IGBT FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=20A) * High Input Impedance APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls * Power Supply * Lamp Ballast


    OCR Scan     		PDF SGP40N60UF 30-OTO T0-220 QQ3b32fl O-220 500MIN D3b33D 74142 SGP40N60UF INDUCTION LAMP ballast lc21

    SFP9530

    Abstract: N mosfet 50v 400A
    Text: SFP9530 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ H B V pss = "1 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Opereting Temperature Extended Safe Operating Area Lower Leakage Current : -10 nA Max. @ VDS = -100V


    OCR Scan     		PDF SFP9530 -100V O-220 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D SFP9530 N mosfet 50v 400A

    SFP9620

    Abstract: No abstract text available
    Text: SFP9620 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ B V dss = -2 0 0 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : -10 pA Max. @ Vos = -200V


    OCR Scan     		PDF SFP9620 -200V O-220 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D SFP9620

    IRFZ44A

    Abstract: ne 22 mosfet
    Text: IRFZ44A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175* »Operating Temperature Lower Leakage Current : 10


    OCR Scan     		PDF IRFZ44A O-220 7Tb414S 30-OTO T0-220 003b32fl 3b32ti O-220 500MIN DD3b33D ne 22 mosfet

    Untitled

    Abstract: No abstract text available
    Text: SSP5N90A A d van ced Power MOSFET FEATURES - 900 V b v dss • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA Max. @ VDS = 900V


    OCR Scan     		PDF SSP5N90A GG4041f 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: IRL630A Advanced Power MOSFET FEATURES b v dss Rugged Gate Oxide Technology • Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V OS = 200V ■ Lower RDS(0N) : 0.335 « (Typ.) 0.4 O


    OCR Scan     		PDF IRL630A 003b32fl O-220 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SFP9Z24 Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ I BVdss = -60 V Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge 175°C Operating Temperature Extended Safe Operating Area Lower Leakage Current : -10 |iA Max. @ VOS = -60V


    OCR Scan     		PDF SFP9Z24 T0-220 003b32fl O-220 00M1N 7Tb4142 DD3h33D

    vex servo motor

    Abstract: TE129 SGP6N60UFD bt 141
    Text: SGP6N60UFD IGBT CO-PAK FEATURES * High Speed Switching * Low Saturation Volatge : VCE sat = 2.2 V (at lc=3A) * High Input Impedance * CO-PAK, IGBT with FRD : Trr=35nS (Typ) APPLICATIONS * AC & DC Motor controls * General Purpose Inverters * Robotics , Servo Controls


    OCR Scan     		PDF SGP6N60UFD 30-OTO T0-220 QQ3b32fl O-220 500MIN D3b33D vex servo motor TE129 SGP6N60UFD bt 141

    E200

    Abstract: IRL510A
    Text: IRL510A A d va n ce d Power MOSFET FEATURES B V DSS • ■ ■ ■ Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance ■ ■ ■ H Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10 HA Max. @ VDS=100V


    OCR Scan     		PDF IRL510A O-220 71b411S 30-OTO T0-220 QQ3b32fl 500MIN D3b33D E200 IRL510A

    ifr 350 mosfet

    Abstract: IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet
    Text: IRL620A Advanced Power MOSFET FEATURES 200 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10pA M ax. @ VOS = 200V Lower RDS(ON) : 0.609 i l (Typ.)


    OCR Scan     		PDF IRL620A O-220 003T14ti 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D ifr 350 mosfet IRF 2505 003T1 IRL620A ifr mosfet ifr 150 mosfet

    DO313

    Abstract: IRLZ34A 1GIT a2633
    Text: IRLZ34A Advanced Power MOSFET FEATURES • ■ ■ ■ ■ ■ ■ BVdss = 60 V Logic-Level Gate Drive Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area Lower Leakage Current : 10


    OCR Scan     		PDF IRLZ34A O-220 DO313Â 30-OTO T0-220 QQ3b32fl 500MIN 7Tb414E DD3b33D DO313 IRLZ34A 1GIT a2633

    mach435

    Abstract: No abstract text available
    Text: FIN A L COM’L: -12/15/20, Q-20/25 Advanced Micro Devices MACH435-12/15/20, Q-20/25 High-Density EE CMOS Programmable Logic DISTINCTIVE CHARACTERISTICS • Flexible clocking ■ 84 Pins in PLCC ■ 128 Macrocells ■ — Four global clock pins with selectable edges


    OCR Scan     		PDF Q-20/25 MACH435-12/15/20, PAL33V16â MACH130, MACH131, MACH230, MACH231 mach435

    Untitled

    Abstract: No abstract text available
    Text: SFP9640 Advanced Power MOSFET FEATURES BVdss = -200 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : -10 pA Max. @ VDS = -200V


    OCR Scan     		PDF SFP9640 -200V O-220 003b32fl 00M1N 7Tb4142 DD3h33D

    Untitled

    Abstract: No abstract text available
    Text: SSP2N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 5.0 £2 ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V


    OCR Scan     		PDF SSP2N60A 00403M5 003b32fl O-220 00M1N 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: SSP3N90A A d van ced Power MOSFET FEATURES B V qss - • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 nA Max. @ VDS = 900V


    OCR Scan     		PDF SSP3N90A 0G4D370 003b32fl O-220 7Tb4142 DD3b33D

    Untitled

    Abstract: No abstract text available
    Text: IRL640A Advanced Power MOSFET FEATURES • BVdss = 200 V Logic-Level Gate Drive ■ Avalanche Rugged Technology ^DS on = 0 .1 8 ÎÎ ■ Rugged Gate Oxide Technology lD = 18 A ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area


    OCR Scan     		PDF IRL640A T0-220 IRLW/I640A 71b4142 003b32fl 3b321 00M1N 71b414E DD3b33D