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    Abstract: No abstract text available
    Text: SSP2N60A A d van ced Power MOSFET FEATURES BVdss = 600 V • Avalanche Rugged Technology = 5.0 £2 ■ Rugged Gate Oxide Technology ^ D S o n ■ Lower Input Capacitance lD = 2 A ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 600V


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    PDF SSP2N60A 00403M5 003b32fl O-220 00M1N 7Tb4142 DD3b33D