Contextual Info: SSP5N80A Advanced Power MOSFET FEATURES B^DSS - 800 V • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ^DS on = 2.2 a ■ Lower Input Capacitance ■ Improved Gate Charge lD = 5 A ■ Extended Safe Operating Area ■ Lower Leakage Current : 25 |iA (Max.) @ VDS = 800V

KMM59256BN

Abstract: KM44C256BJ
Contextual Info: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­

J-300

Abstract: KM68257C KM68257
Contextual Info: KM68257C CMOS SRAM 32Kx8 Bit High Speed CMOS Static RAM . FEATURES . GENERAL DESCRIPTION • Fast Aoeess Time 12 , 15 ,2 0 ns- Max.f • Low Power Dissipation ' i Standby (TTL : 40 mA (Max.) (CMOS): 2 mA (Max.) •100 )iA(Max.) - L- Ver. Operating KM68257C/CL-12:1 6 5 mA (Max.)