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    Samsung Semiconductor KMM59256BN-80

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    Samsung Semiconductor KMM59256BN-8

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    KMM59256BN

    Abstract: KMM59256BN7 59256BN KMMS9256BN-8
    Text: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5 9 2 5 6 B N is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 9 2 5 6 B N co n sist o f tw o 1M bit DRAMs


    OCR Scan     		KMM59256BN 18-pin 59256BN KMM59256BN KMM59256BN7 KMMS9256BN-8 PDF

    KMM59256BN

    Abstract: KM44C256BJ
    Text: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­


    OCR Scan     		KMM59256BN KMM59256BN KM44C256BJ 256KX4) 20-pin KM41C256J-256KX1) 18-pin 30-pin KMM59256BN- PDF

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    Abstract: No abstract text available
    Text: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 59256BN is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density memory module. The Sam­ sung KM M 59256BN consist of two 1M bit DRAMs


    OCR Scan     		KMM59256BN 59256BN 44C256BJ 20-pin 256J-256K 18-pin 30-pin 59256BN- 130ns PDF

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" PDF