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KM424C256Z Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8" Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J	OCR Scan	PDF	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
KM41C1000BJ Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page	OCR Scan	PDF	KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM41C1000BJ KM44C256BP KM41C1000BP KM41C1001BP KM44C256BJ km4164 KM44C1000LJ KM41C464Z
KM4164B-12 Abstract: samsung hv capacitor KM4164B-10 NMOS DRAM KM4164B-15 KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10 Text: KM4164B NMOS DRAM 6 4 K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran dom A ccess M em ory organized as 65,536 one-bit words. The design is op tim ized fo r high speed, high pe rfor	OCR Scan	PDF	KM4164B KM4164B-10 100ns 190ns KM4164B-12 120ns 220ns KM4164B-15 150ns 260ns samsung hv capacitor NMOS DRAM KM4164B KM4164BP KM4164 Samsung Tantalum Capacitor TCP KM4164B10
"speech synthesis" parcor Abstract: "speech synthesis" lpc Text: SPEECH SYNTHESIZER SPEECH SYNTHESIZER DEVICES Many different approaches have been used for syn thesizing speech signals. Generally, all these methods employ some form of pattern matching. At first, the input utterances are filtered and digitized. The extracts	OCR Scan	PDF	KS5911 "speech synthesis" parcor "speech synthesis" lpc
NMOS DRAM Abstract: KM4164BP KM4164 km4164b Text: KM4164B NMOS DRAM 64K x 1 Bit Dynamic RAM with Page Mode FEATURES GENERAL DESCRIPTION • Performance range The KM4164B is a fully decoded NMOS Dynamic Ran dom Access Memory organized as 65,536 one-bit words. The design is optimized for high speed, high perfor	OCR Scan	PDF	KM4164B KM4164B-10 KM4164B-12 KM4164B-15 100ns 120ns 150ns 190ns 220ns 260ns NMOS DRAM KM4164BP KM4164 km4164b