KM41C1001BP
Abstract: No abstract text available
Text: i+2E D S A M S U N G E L E C T R O N I C S INC • 7^4142 KM41C10Ö1B GGIOOSO T ■ SflGK CMOS DRAM 1 M X 1 B it C M O S D y n a m ic R A M w ith N ib b le M o d e ‘I _ ' T ' tt b - Z 5 .- r 5 FEA TU RES GEN ERAL DESCRIPTION • Performance range: The Samsung KM41C1001B is a CMOS high speed
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KM41C10Ã
KM41C1001B
KM41C1001B-
110ns
130ns
150ns
KM41C1001B-10
KM41C1001B
KM41C1001BP
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KM41C1001bp
Abstract: c1001b KM41C1001BJ
Text: KM41C1001B CMOS DRAM 1 M X 1 Bit C M O S Dynamic RAM with Nibble M ode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C1001B is a CMOS high speed 1,048,576 x 1 Dynam ic Random A ccess Memory. Its de sign is o p tim ized fo r high perform ance ap p lica tio n s
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KM41C1001B
KM41C1001B6
KM41C1001B
18-LEAD
20-LEAD
KM41C1001bp
c1001b
KM41C1001BJ
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Untitled
Abstract: No abstract text available
Text: KM41C1001B CMOS DRAM 1M X 1 Bit CMOS Dynamic RAM with Nibble Mode FEATURES GENERAL DESCRIPTION • Performance range: The S am sung KM41C1001B is a CMOS high speed 1,048,576 x 1 Dynam ic Random A ccess Memory. Its de sign is o p tim ized fo r high pe rform ance ap p lica tio n s
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OCR Scan
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KM41C1001B
KM41C1001B
KM41C1001B-
110ns
130ns
150ns
KM41C1001B-10
100ns
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KM41C1000BJ
Abstract: KM44C256BP KM41C1000BP KM41C1001BP KM41C256P KM44C256BJ km4164 KM41C256J KM44C1000LJ KM41C464Z
Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Num ber Capacity 64K b it KM4164BP 256 K b it KM41C256P I [ I Technology Features Packages R em ark 100/120/150 NM OS Page M ode 16 Pin DIP 70/80/100 70/80/100 70/80/100 70/80/100 Fast Page Fast Page
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KM4164BP
KM41C256P
KM41C256J
KM41C256Z
KM41C257P
KM41C257J
KM41C257Z
KM41C258P
KM41C258J
KM41C258Z
KM41C1000BJ
KM44C256BP
KM41C1000BP
KM41C1001BP
KM44C256BJ
km4164
KM44C1000LJ
KM41C464Z
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