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    Samsung Semiconductor KMM59256BN-80

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    KMM59256BN

    Abstract: KMM59256BN7 59256BN KMMS9256BN-8
    Text: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung K M M 5 9 2 5 6 B N is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density m em ory module. The Sam­ sung K M M 5 9 2 5 6 B N co n sist o f tw o 1M bit DRAMs


    OCR Scan     		PDF KMM59256BN 18-pin 59256BN KMM59256BN KMM59256BN7 KMMS9256BN-8

    KMM59256BN

    Abstract: KM44C256BJ
    Text: S A M S U N G ELECTR O N ICS IN C 42E D D 7c lbm42 D O IO M ID 3 SSM G K KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KMM59256BN is a 262,144 bit X 9 Dynamic RAM high density memdry module. The Sam­


    OCR Scan     		PDF KMM59256BN KMM59256BN KM44C256BJ 256KX4) 20-pin KM41C256J-256KX1) 18-pin 30-pin KMM59256BN-

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    Abstract: No abstract text available
    Text: KMM59256BN DRAM MODULES 2 5 6 K X 9 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • Performance range: The Samsung KM M 59256BN is a 2 6 2 ,1 4 4 bit X 9 Dynamic RAM high density memory module. The Sam­ sung KM M 59256BN consist of two 1M bit DRAMs


    OCR Scan     		PDF KMM59256BN 59256BN 44C256BJ 20-pin 256J-256K 18-pin 30-pin 59256BN- 130ns

    KM424C256Z

    Abstract: SIMM 30-pin 30-pin SIMM RAM KM41C256P KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"
    Text: FUNCTION GUIDE MEMORY ICs 2. PRODUCT GUIDE 2.1 Dynamic RAM Part Number Capacity Organization Speed ns Technology Features Packages Remark 64K bit KM4164BP 100/120/150 NMOS Page Mode 16 Pin DIP Now 256K bit KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J


    OCR Scan     		PDF KM4164BP KM41C256P KM41C256J KM41C256Z KM41C257P KM41C257J KM41C257Z KM41C258P KM41C258J KM41C258Z KM424C256Z SIMM 30-pin 30-pin SIMM RAM KM44C256bp KM41C1000BJ 257J KM44C256BZ 1K x4 static ram 30-pin simm memory "16m x 8"