5787
Abstract: No abstract text available
Text: 107-68539 Packaging Specification 17Dec07 Rev G CHAMP DOCKING 1. PURPOSE 目的 Define the packaging specifiction and packaging method of CHAMP DOCKING product. 订定 CHAMP DOCKING 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围
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17Dec07
200POSN
050CHAMP
5787
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Untitled
Abstract: No abstract text available
Text: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. C COPYRIGHT 2003 2 3 1 2003 LOC BY - REVISIONS DIST AI ALL RIGHTS RESERVED. 2 P LTR DESCRIPTION B2 B3 8.13 0.25 D 5 13.97 27.43 0.38 B APVD ECR-13-016227 11NOV2013 KKB R.P ECR-13-019618 17DEC2013 KKB
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ECR-13-016227
11NOV2013
ECR-13-019618
17DEC2013
16APR2004
26APR2004
27APR2004
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stp26nm60
Abstract: STW26NM60N 26NM60N STP26NM60N 26nm60 STI26NM60N STB26NM60N STB26NM60 STF26NM60N
Text: STB26NM60N, STF26NM60N, STI26NM60N STP26NM60N, STW26NM60N N-channel 600 V, 0.135 Ω typ., 20 A MDmesh II Power MOSFET in D2PAK, I2PAK, TO-220, TO-220FP and TO-247 packages Datasheet — production data Features Type VDSS RDS on max ID STB26NM60N 600 V
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STB26NM60N,
STF26NM60N,
STI26NM60N
STP26NM60N,
STW26NM60N
O-220,
O-220FP
O-247
STB26NM60N
STF26NM60N
stp26nm60
STW26NM60N
26NM60N
STP26NM60N
26nm60
STB26NM60
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Untitled
Abstract: No abstract text available
Text: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC
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VN820-E
VN820-E
VN820SP-E
VN820B5-E
VN820PT-E
VN820-12-E
VN820-11-E
PowerSO-10
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Untitled
Abstract: No abstract text available
Text: TLV320DAC3101 www.ti.com SLAS666 – JANUARY 2010 Low-Power Stereo Audio DAC With Audio Processing and Stereo Class-D Speaker Amplifier Check for Samples: TLV320DAC3101 1 INTRODUCTION 1.1 Features • Stereo Audio DAC With 95-dB SNR • Supports 8-kHz to 192-kHz Sample Rates
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TLV320DAC3101
SLAS666
95-dB
192-kHz
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TLK1102E
Abstract: No abstract text available
Text: TLK1102E www.ti.com . SLLS958 – MARCH 2009 11.3-Gbps Dual-Channel Cable and PC Board Equalizer
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TLK1102E
SLLS958
65GHz
11GHz
1200mVp-p
TLK1102E
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Untitled
Abstract: No abstract text available
Text: TPS2556 TPS2557 www.ti.com SLVS931 – NOVEMBER 2009 PRECISION ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES Check for Samples: TPS2556 TPS2557 FEATURES 1 • • • • • • • • • • • • 2 DESCRIPTION Meets USB Current-Limiting Requirements
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TPS2556
TPS2557
SLVS931
TPS2556
E169910
TPS2556/57
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MPSA13
Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
Text: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area
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CP307
2N6426
2N6427
CMPT6427
CMPTA13
CMPTA14
CXTA14
CZTA14
MPSA13
MPSA14
MPSA13
MPSA14
SILICON TRANSISTOR CORP
2N6426
2N6427
CMPT6427
CMPTA13
CMPTA14
CP307
CXTA14
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titanium oxide
Abstract: No abstract text available
Text: MATERIAL DATA SHEET Material CM160808 Series Product Line Date Laser-Cut Chip Inductors 17-December-2004 No. Construction element Material group 1 Ceramic Core Alumina 2 Conductor Coating resign Copper Epoxy Material weight mg 2.39 (ref.) 1.26 (ref.) 0.32
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CM160808
17-December-2004
titanium oxide
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 14 LTR DESCRIPTION M REVISED DWN DATE PER 0 G 3 A - 0 7 9 9 - 0 3 17DEC03 APVD JR MJS 1 3 . 0 8 ± 0 - 1 3 DIA
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17DEC03
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AEG dd 65
Abstract: No abstract text available
Text: 4 3 TH IS DRAWING IS U N PU B LIS H ED . RELEASED FOR PUBLICATION BY AMP INCORPORATED. COPYRIGHT 19 2 ,19 LOC ALL RIGHTS R ESER VED . AF REVISIONS D IS T 50 D E S C R IP T IO N C C' D 1 2.06 1 .98 70 8 f .078 2 3 E " N E ^ I V A DIA 17DEC99 JR DD R E V I S E D P E R E C 0 - 0 9 - 0 2 1 51 0
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0G3A-0319-99
ECO-09-021
17DEC99
08SEP09
11JUN97
AEG dd 65
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Untitled
Abstract: No abstract text available
Text: TH I S DRAW I NG I S U N P U B L I S H E D . ß l COPYRIGHT 19 R E L E A S E D FOR P U B L I C A T I O N . I9 BY AMP I N C O R P O R A T E D . DY [ . 100] SEATING PLANE MAX [ . 000 DWN DATE LWY 17DEC04 APVD VT DIMENSION INCLUDING HANDLE M A T E R I A L ; H O U S I N G AND C O V E R ARE T H E R M O P L A S T I C .
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Untitled
Abstract: No abstract text available
Text: 6 7 THIS DRAWING IS UNPUBLISHED. COPYRIGHT - 4 3 2 RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. AJ REVISIONS DIST 16 LTR DESCRIPTION A DATE DWN BC KW 17DEC05 REV PER EC-0S14-0028-05 APVD D D PARTS PACKAGED UNASSEMBLED
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EC-0S14-0028-05
17DEC05
31JAN2005
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 3 RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. DIST AF BY TYCO ELECTRONICS CORPORATION. REVISIONS 50 LTR DESCRIPTION B 1 D . 2 7 5 STRIP ON REVISED PER 0 G 3 A - 0 7 5 0 - 0 2 APVD MF KR 17DEC 02 REELS D FOR OPTI MUM RETENTION IN P O K E - I N TYPE M A G - M A T E
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17DEC
31MAR2000
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Untitled
Abstract: No abstract text available
Text: 4 TH IS DRAWING IS 3 U N P U B L IS H E D . RELEASED FOR PU B LIC ATIO N A LL COPYRIGHT RIG HTS 2 - ,- LOC R E S ER V ED . A D IST 1 AJ BY TYCO ELECTRONICS CORPORATION. R E V IS IO N S 0 0 P LTR B D E S C R IP TIO N REV PER ECO DATE DWN DW JL 17DEC 2007
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17DEC
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBUSHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DI ST G REVISIONS 14 P LTR DESCRIPTION G1 DATE CRRECTED SPELLING EROR DWN APVD JR TM 17DEC03 D D Æ ^ l IE ^ WIRE RANGE 1/ 0 /ijgjfc
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17DEC03
LR7189
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 3 THIS DRAWING IS UNPUBLISHED. COPYRIGHT —»— RELEASED FOR PUBLICATION LOC ALL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. G REVISIONS DIST 14 LTR DESCRIPTION OWN DATE REVISED PER 0G 3A - 07 99- 03 APVD JR MJS 17DEC03 D D / íg p r j L is te d
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17DEC03
LR7189
B-152,
B-545
31MAR2000
3-117mm
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Untitled
Abstract: No abstract text available
Text: THIS DRAWING IS UNPUBLISHED. COPYRIGHT RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. - LOC G ALL RIGHTS RESERVED. 6 .7 3 ± 0 - 1 3 DIST 1 4 R E V IS IO N S LTR DESCRIPTION REVISED DIA DWN DATE PER 0 G 3 A - 0 7 9 9 - 0 3 17DEC03 APVD JR MJS
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17DEC03
iO-20
E13288
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PDF
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Untitled
Abstract: No abstract text available
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT 2 3 RELEASED FOR PUBLICATION ALL INTERNATIONAL RIGHTS RESERVED. BY TYCO ELECTRONICS CORPORATION. - ,- REM ISIO NS P LTR DESCRIPTION EU REVISED PER E C R -0 8 -0 3 1 605 DATE DWN 17DEC08 APVD HMR EH CONTINUOUS STRIP ON REEL.
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17DEC08
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Untitled
Abstract: No abstract text available
Text: 2 TH I S ßl DRAW ING IS C OPYRIGHT UNPUB L I S H E D . R EL EA S ED 19 BY AMP I NCORPORATE D . ALL FOR P U B LIC A T IO N R IG H TS . I 9 LOC AG R ES ER V ED . R E V ISIONS Dl S T 53 LTR DE SC R I P T I O N 17DEC98 I I JAN99 R E V I S E D P E R OG 50 - 0 30 6
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JAN99
09MAY
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6925DQ S e m i c o n d u c t o r s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) r DS(on) ( ß ) 20 0.05 @ VGS = 4.5 V ± 3 .4 0.06 @ VGS = 3.0 V ± 3.1 0.08 @ VGS = 2.5 V ± 2 .7 is * * " * d 2 o TSSOP-8 Top View N-Channel M OSFET
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6925DQ
S-49455--
11-Dec-96
TSSOP-8/-28
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ6926DQ Se mi c ond uc t or s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 20 fDSion) (&) I d (A) 0.035 @ VGS = 4.5 V ±4.0 0.040 @ VGS = 3.0 V ±3.7 0.045 @ VGS = 2.5 V ±3.5 iJS-V « ä<e4 Dl O 2 d o TSSOP-8 G2 Gi Top View N-Channel M OSFET
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6926DQ
S-49456--Rev.
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: SÌ6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET v » (V) H d SIOH) (Û ) A •d (A) 0.05 @ V GS = 4.5 V 0 .0 6 V q S = 3.0 V 0.08 @ V e s = 2.5 V Di Q D2 Q TSSOP-8 <J2 o -i Top View Ô s2 N -Channel MOSFET PARAMETER SYMBOL N-Channel MO SFET
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6925DQ
17-Dec-96
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Untitled
Abstract: No abstract text available
Text: Tem ic SÌ4425DY S e m i c o n d u c t o r s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) I d (A) rDS(on) (£2) 30 0.014 VGS = -10 V ±11 0.023 @ VGS = -4.5 V ±8.5 iisr f t 1 ' Po * e m SO-8 ns rm Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)
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4425DY
S-49458--Rev.
17-Dec-96
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