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5787

Contextual Info: 107-68539 Packaging Specification 17Dec07 Rev G CHAMP DOCKING 1. PURPOSE 目的 Define the packaging specifiction and packaging method of CHAMP DOCKING product. 订定 CHAMP DOCKING 产品之包装规格及包装方式。 2. APPLICABLE PRODUCT 适用范围

AEG dd 65

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Contextual Info: THIS DRAWING IS UNPUBLISHED. COPYRIGHT - RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. LOC G ALL RIGHTS RESERVED. DIST R E V IS IO N S 14 LTR DESCRIPTION REVISED DWN DATE PER 0 G 3 A - 0 7 9 9 - 0 3 17DEC03 1 3 . 0 8 ± 0 - 1 3 DIA [ . 5 1 5 ±-0 0 5 ]

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Contextual Info: VN820-E High-side driver Datasheet − production data Features Type RDS on VN820-E VN820SP-E VN820B5-E VN820PT-E VN820-12-E VN820-11-E IOUT 10 VCC 1 PowerSO-10 40 mΩ 9A 36 V • ECOPACK : lead free and RoHS compliant ■ Automotive Grade: compliance with AEC

Contextual Info: TLV320DAC3101 www.ti.com SLAS666 – JANUARY 2010 Low-Power Stereo Audio DAC With Audio Processing and Stereo Class-D Speaker Amplifier Check for Samples: TLV320DAC3101 1 INTRODUCTION 1.1 Features • Stereo Audio DAC With 95-dB SNR • Supports 8-kHz to 192-kHz Sample Rates

TLK1102E

Contextual Info: TLK1102E www.ti.com . SLLS958 – MARCH 2009 11.3-Gbps Dual-Channel Cable and PC Board Equalizer

Contextual Info: Tem ic SÌ6925DQ S e m i c o n d u c t o r s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) Id (A) r DS(on) ( ß ) 20 0.05 @ VGS = 4.5 V ± 3 .4 0.06 @ VGS = 3.0 V ± 3.1 0.08 @ VGS = 2.5 V ± 2 .7 is * * " * d 2 o TSSOP-8 Top View N-Channel M OSFET

Contextual Info: Tem ic SÌ6926DQ Se mi c ond uc t or s Dual N-Channel 2.5-V G-S Rated MOSFET Product Summary V d s (V) 20 fDSion) (&) I d (A) 0.035 @ VGS = 4.5 V ±4.0 0.040 @ VGS = 3.0 V ±3.7 0.045 @ VGS = 2.5 V ±3.5 iJS-V « ä<e4 Dl O 2 d o TSSOP-8 G2 Gi Top View N-Channel M OSFET

Contextual Info: SÌ6925DQ Vishay Siliconix Dual N-Channel 2.5-V G-S MOSFET v » (V) H d SIOH) (Û ) A •d (A) 0.05 @ V GS = 4.5 V 0 .0 6 V q S = 3.0 V 0.08 @ V e s = 2.5 V Di Q D2 Q TSSOP-8 <J2 o -i Top View Ô s2 N -Channel MOSFET PARAMETER SYMBOL N-Channel MO SFET

Contextual Info: Tem ic SÌ4425DY S e m i c o n d u c t o r s P-Channel 30-V D-S Rated MOSFET Product Summary V d s (V) I d (A) rDS(on) (£2) 30 0.014 VGS = -10 V ±11 0.023 @ VGS = -4.5 V ±8.5 iisr f t 1 ' Po * e m SO-8 ns rm Top View D D D D P-Channel MOSFET Absolute Maximum Ratings (Ta = 25 °C Unless Otherwise Noted)

Contextual Info: TPS2556 TPS2557 www.ti.com SLVS931 – NOVEMBER 2009 PRECISION ADJUSTABLE CURRENT-LIMITED POWER-DISTRIBUTION SWITCHES Check for Samples: TPS2556 TPS2557 FEATURES 1 • • • • • • • • • • • • 2 DESCRIPTION Meets USB Current-Limiting Requirements

MPSA13

Abstract: MPSA14 SILICON TRANSISTOR CORP 2N6426 2N6427 CMPT6427 CMPTA13 CMPTA14 CP307 CXTA14
Contextual Info: Central TM Semiconductor Corp. PROCESS CP307 Small Signal Transistor NPN - Silicon Darlington Transistor Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 27 x 27 MILS Die Thickness 9.0 MILS Base Bonding Pad Area 5.3 x 3.8 MILS Emitter Bonding Pad Area

titanium oxide

Contextual Info: MATERIAL DATA SHEET Material CM160808 Series Product Line Date Laser-Cut Chip Inductors 17-December-2004 No. Construction element Material group 1 Ceramic Core Alumina 2 Conductor Coating resign Copper Epoxy Material weight mg 2.39 (ref.) 1.26 (ref.) 0.32