Untitled
Abstract: No abstract text available
Text: 6N138/ 6N139 VISHAY Vishay Semiconductors Low Input Current, High Gain Optocoupler Features • • • • • • • • High Current Transfer Ratio, 300 % Low Input Current, 0.5 mA High Output Current, 60 mA Isolation Test Voltage, 5300 VRMS TTL Compatible Output, VOL = 0.1 V
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6N138/
6N139
i179082
E52744
D-74025
17-Sep-03
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PDF
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y SOH28
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
SOH28
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PDF
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THE M48Z
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
THE M48Z
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PDF
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Untitled
Abstract: No abstract text available
Text: ILD610 VISHAY Vishay Semiconductors Dual Phototransistor Optocoupler Features • • • • Dual Version of SFH610 Series Isolation Test Voltage, 5300 VRMS VCEsat 0.25 ≤ 0.4 V at IF = 10 mA, IC = 2.5 mA VCEO = 70 V Agency Approvals • • • • UL File #E52744 System Code H or J
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Original
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ILD610
SFH610
E52744
i179045
ILD610
D-74025
17-Sep-03
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PDF
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Untitled
Abstract: No abstract text available
Text: BAR63V-04W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Series in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-04W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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Original
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BAR63V-04W
OT-323
BAR63V-04W
D-74025
17-Sep-03
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PDF
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Untitled
Abstract: No abstract text available
Text: BAR63V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-03W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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Original
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BAR63V-03W
OT-323
BAR63V-03W
D-74025
17-Sep-03
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PDF
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Si6993DQ
Abstract: Si6993DQ SPICE Device Model
Text: SPICE Device Model Si6993DQ Vishay Siliconix Dual P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the −55 to 125°C Temperature Range
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Si6993DQ
0-to-10V
17-Sep-03
Si6993DQ SPICE Device Model
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PDF
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Untitled
Abstract: No abstract text available
Text: BAR64V-03W VISHAY Vishay Semiconductors RF PIN Diode - Single in SOT-323 Description Characterized by low reverse Capacitance the PIN Diodes BAR64V-03W was designed for RF signal switching and tuning. As a function of the forward bias current the forward resistance rf can be
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Original
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BAR64V-03W
OT-323
BAR64V-03W
D-74025
17-Sep-03
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PDF
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Untitled
Abstract: No abstract text available
Text: BAR63V-05W VISHAY Vishay Semiconductors RF PIN Diodes - Dual, Common Cathode in SOT-323 Description Characterized by a very low reverse Capacitance the PIN Diode BAR63V-05W was designed for RF signal tuning. As a function of the forward bias current the forward resistance rf can be adjusted to less than
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Original
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BAR63V-05W
OT-323
BAR63V-05W
D-74025
17-Sep-03
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PDF
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M48Z512A
Abstract: M48Z512AV M48Z512AY M4Z32-BR00SH1 SOH28 M48Z51
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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Original
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
M48Z512A
M48Z512AV
M48Z512AY
M4Z32-BR00SH1
SOH28
M48Z51
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z512A
M48Z512AY,
M48Z512AV
M48Z512A:
M48Z512AY:
M48Z512AV:
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PDF
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M40Z300
Abstract: M48Z128 M48Z128V M48Z128Y D 4242 CP1621
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, AND BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES
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Original
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M48Z128
M48Z128Y,
M48Z128V*
M48Z128:
M48Z128Y:
M48Z128V:
M40Z300
M48Z128
M48Z128V
M48Z128Y
D 4242
CP1621
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PDF
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Untitled
Abstract: No abstract text available
Text: SFH6650 VISHAY Vishay Semiconductors 0.5 A Output Current IGBT & MOSFET Driver Features • 0.5 A Minimum Peak Output Current • 20 kV/µs Minimum Common Mode Rejection CMR at Vcm = 1500 V • 1.0 V Maximum Low Level Output Voltage (VOL) Eliminates Need for Negative Gate Drive
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SFH6650
D-74025
17-Sep-03
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PDF
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1N5817
Abstract: AN1012 M48Z512A M48Z512AV M48Z512AY M48Z512BV M68XXX
Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM Features • Integrated, ultra low power SRAM, power-fail control circuit, and battery ■ Conventional SRAM operation; unlimited WRITE cycles ■ 10 years of data retention in the absence of
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Original
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M48Z512A
M48Z512AY,
M48Z512AV*
M48Z512A:
M48Z512AY:
M48Z512AV:
M48Z512A/Y/V
304-bit
1N5817
AN1012
M48Z512A
M48Z512AV
M48Z512AY
M48Z512BV
M68XXX
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BAV21-TR
Abstract: BAV17 BAV17-TAP BAV17-TR BAV18 BAV19 BAV20 BAV21 BAV17-BAV21
Text: BAV17.BAV21 VISHAY Vishay Semiconductors Switching Diode Features • Silicon Epitaxial Planar Diodes Applications General purposes Mechanical Data Case: DO-35 Glass Case Weight: approx. 300 mg Packaging Codes/Options: D7/10 K per 13" reel 52 mm tape , 20 K/box
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BAV17.
BAV21
DO-35
D7/10
D8/10
BAV17
BAV17-TAP
BAV17-TR
BAV18
BAV18-TAP
BAV21-TR
BAV17
BAV17-TR
BAV18
BAV19
BAV20
BAV21
BAV17-BAV21
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Untitled
Abstract: No abstract text available
Text: UG8AT-DT, UGF8AT-DT, UGB8AT-DT Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 8.0 A Reverse Recovery Time 20 ns ITO-220AC UGF8AT-DT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72)
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ITO-220AC
O-220AC
50mVp-p
17-Sep-03
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PDF
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BYV29F
Abstract: UGF8 BYV29 BYV29-300 BYV29-400 BYV29B
Text: BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 300 to 400V Forward Current 8.0A Reverse Recovery Time 35ns ITO-220AC BYV29F, UGF8 Series 0.188 (4.77) 0.172 (4.36)
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Original
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BYV29,
BYV29F,
BYV29B,
ITO-220AC
O-220AC
50mVp-p
17-Sep-03
BYV29F
UGF8
BYV29
BYV29-300
BYV29-400
BYV29B
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PDF
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Untitled
Abstract: No abstract text available
Text: BYV29, BYV29F, BYV29B, UG8GT, UGF8GT, UGB8GT Series Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 300 to 400V Forward Current 8.0A Reverse Recovery Time 35ns ITO-220AC BYV29F, UGF8 Series 0.188 (4.77) 0.172 (4.36)
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BYV29,
BYV29F,
BYV29B,
ITO-220AC
O-220AC
08-Apr-05
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PDF
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Untitled
Abstract: No abstract text available
Text: UG8AT-DT, UGF8AT-DT, UGB8AT-DT Vishay Semiconductors formerly General Semiconductor Ultrafast Rectifier Reverse Voltage 50 to 200 V Forward Current 8.0 A Reverse Recovery Time 20 ns ITO-220AC UGF8AT-DT 0.188 (4.77) 0.172 (4.36) 0.405 (10.27) 0.383 (9.72)
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ITO-220AC
O-220AC
08-Apr-05
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PDF
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BA892V-04W
Abstract: BA892V-04W-GS08
Text: BA892V-04W VISHAY Vishay Semiconductors Band Switching Diodes - Dual, Series in SOT-323 Description The main purpose of the BA892V-04W is the Band Switching. Biased with a DC forward current for signals at frequencies over 100 MHz up to 3 GHz this diode behaves like a current controlled resistor and
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BA892V-04W
OT-323
BA892V-04W
BA892V04W
D-74025
17-Sep-03
BA892V-04W-GS08
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PDF
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M40Z300
Abstract: M48Z512A M48Z512AV M48Z512AY
Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z512A
M48Z512AY,
M48Z512AV*
32-pin
M48Z512A:
M48Z512AY:
M48Z512AV:
M40Z300
M48Z512A
M48Z512AV
M48Z512AY
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PDF
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M48Z128
Abstract: M48Z128V M48Z128Y M40Z300
Text: M48Z128 M48Z128Y, M48Z128V* 5.0V OR 3.3V, 1 Mbit 128 Kbit x 8 ZEROPOWER SRAM FEATURES SUMMARY • INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY ■ CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES ■ 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z128
M48Z128Y,
M48Z128V*
32-pin
M48Z128:
M48Z128Y:
M48Z128V:
M48Z128
M48Z128V
M48Z128Y
M40Z300
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PDF
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Untitled
Abstract: No abstract text available
Text: M48Z512A M48Z512AY, M48Z512AV* 4 Mbit 512 Kbit x8 ZEROPOWER SRAM FEATURES SUMMARY • ■ ■ ■ ■ ■ ■ ■ ■ ■ INTEGRATED, ULTRA LOW POWER SRAM, POWER-FAIL CONTROL CIRCUIT, and BATTERY CONVENTIONAL SRAM OPERATION; UNLIMITED WRITE CYCLES 10 YEARS OF DATA RETENTION IN THE
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Original
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M48Z512A
M48Z512AY,
M48Z512AV*
M48Z512A:
M48Z512AY:
M48Z512AV:
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PDF
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69478-1
Abstract: spec rg 188 cable
Text: 4 THIS DRAWING IS UNPUBLISHED. COPYRIGHT E 3 1 2 RELEASED FOR PUBUCATION-ALL RIGHTS RESERVED. 0 ELECTRONICS CORPORATION. REVISIO NS AJ -DESCRIPTION-REV PER EC 0S1 4 - 0 1 4 6 - 0 3 R G - 5 8 /U , A /tk /fk 7.
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OCR Scan
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17SEP03
RG-58/U,
RG-58A/U,
RG-58B/U,
RG-58C/U
RG-55/U,
RG-55A/U,
RG-55B/U,
RG-223/U
RG-59/U,
69478-1
spec rg 188 cable
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PDF
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