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    Kyocera AVX Components 800A180MW250XT

    Multilayer Ceramic Capacitors MLCC - SMD/SMT 250volts 18pF 20%
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    Mouser Electronics 800A180MW250XT
    • 1 $1.17
    • 10 $0.922
    • 100 $0.692
    • 1000 $0.46
    • 10000 $0.4
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    Kyocera AVX Components 600L180MW200T

    Silicon RF Capacitors / Thin Film 200V 18pF Tol 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600L180MW200T
    • 1 $0.6
    • 10 $0.401
    • 100 $0.264
    • 1000 $0.175
    • 10000 $0.141
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    Kyocera AVX Components 600S180MW250XT

    Silicon RF Capacitors / Thin Film 250volts 18pF 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600S180MW250XT
    • 1 $0.6
    • 10 $0.401
    • 100 $0.264
    • 1000 $0.175
    • 10000 $0.141
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    Kyocera AVX Components 600F180MW250XT

    Silicon RF Capacitors / Thin Film 250volts 18pF 20%
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 600F180MW250XT
    • 1 $0.73
    • 10 $0.51
    • 100 $0.35
    • 1000 $0.245
    • 10000 $0.204
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    Kyocera AVX Components 700A180MW150XT

    Silicon RF Capacitors / Thin Film 150V 18pF Tol 20% Las Mkg
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics 700A180MW150XT
    • 1 $1.31
    • 10 $0.979
    • 100 $0.732
    • 1000 $0.515
    • 10000 $0.437
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    180MW Datasheets Context Search

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    SMDJ-65609EV-40SV

    Abstract: M65609E MMDJ-65609EV-40 MMDJ-65609EV-40-E MMDJ-65609EV-40MQ
    Text: Features • Operating voltage: 3.3V • Access time: 40ns • Very low power consumption • • • • • • • • – active: 180mW Max – standby: 70µW (Typ) Wide temperature Range: -55°C to +125°C 400 Mils width package TTL compatible inputs and outputs


    Original     		PDF 180mW 200Krads M65609E SMDJ-65609EV-40SV MMDJ-65609EV-40 MMDJ-65609EV-40-E MMDJ-65609EV-40MQ

    Untitled

    Abstract: No abstract text available
    Text: MMBD701 SURFACE MOUNT SCHOTTKY DIODE VOLTAGE POWER 70 Volts 180mWatts FEATURES • Extremely low minority carrier lifetime 0.120 3.04 • Low capacitance (0.4pF @ 20V typical) • Low reverse leakage (30nA @ 35V typical) 0.110(2.80) • Surface mount package ideally suited for automatic insertion


    Original     		PDF MMBD701 2002/95/EC IEC61249 180mWatts OT-23 MIL-STD-750

    Untitled

    Abstract: No abstract text available
    Text: ADS804 ADS 804 E SBAS068B – JANUARY 1997 – REVISED AUGUST 2002 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● HIGH SFDR: 80dB at NYQUIST HIGH SNR: 69dB LOW POWER: 180mW LOW DLE: ±0.3LSB


    Original     		PDF ADS804 SBAS068B 12-Bit, 10MHz 180mW ADS804

    MAX1420

    Abstract: MAX1421 MAX1421CCM MAX1421ECM MAX1422 MAX4284 15MHZ
    Text: 19-1900; Rev 0; 5/01 12-Bit, 40Msps, +3.3V, Low-Power ADC with Internal Reference ♦ 67dB SNR at fIN = 5MHz ♦ 66dB SNR at fIN = 15MHz ♦ Internal, +2.048V Precision Bandgap Reference ♦ Differential, Wideband Input T/H Amplifier ♦ Power-Down Modes 180mW Reference Shutdown Mode


    Original     		PDF 12-Bit, 40Msps, 15MHz 180mW 48-Pin MAX1421ECM MAX1421 MAX1420 MAX1421 MAX1421CCM MAX1421ECM MAX1422 MAX4284 15MHZ

    Untitled

    Abstract: No abstract text available
    Text: ADS804 ADS 804 E SBAS068B – JANUARY 1997 – REVISED AUGUST 2002 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● HIGH SFDR: 80dB at NYQUIST HIGH SNR: 69dB LOW POWER: 180mW LOW DLE: ±0.3LSB


    Original     		PDF ADS804 SBAS068B 12-Bit, 10MHz 180mW ADS804

    IFA2002-N

    Abstract: NV0100 NF5002 NV0200 EX-94 34mm2
    Text: R Induktive Näherungsschalter NAMUR EN 50227 NF5002 IFA2002-N 2 M12x1 30 Metallgewinde M12 x 1 4 Anschlußleitung 17 Schaltabstand 2 mm [b] bündig einbaubar Anschluß an Schaltverstärker NV0100, NV0200 oder andere zugelassene Schaltverstärker mit den Höchstwerten: U = 15V; I = 50 mA; P = 180mW


    Original     		PDF NF5002 IFA2002-N M12x1 NV0100, NV0200 180mW Ex-94 34mm2 \DATEN\100\DB-FORM--PZD/02/09/97 IFA2002-N NV0100 NF5002 34mm2

    RLD78PZW2

    Abstract: optical disk drive laser diode RW
    Text: RLD78PZW2 Laser Diodes AlGaAs laser diode RLD78PZW2 The RLD78PZW2 is infrared laser diode high power output type pulse 180mW . This is the best for optical disk drive use, such as CD-R/RW. !Applications Max. X32 speed CD-R/RW drives. !Features 1) Absolute maximum optical power output : pulse 180mW


    Original     		PDF RLD78PZW2 RLD78PZW2 180mW) 180mW 784nm optical disk drive laser diode RW

    relay slim 5mm

    Abstract: RELAY E-T-A 250VAC 28VDC ME32 relay 12vdc 6a
    Text: ME32 Series Miniature Slim Line Power Relay Features “ “ “ “ “ “ Contact Data 6A Switching Capability Form 1A, 1B and 1C Configurations 5kV dielectric coil to contacts Slim size - 5mm width Low Power - 180mW Coil UL Approvals Characteristics Contact Forms


    Original     		PDF 180mW 100mA 12VDC 250VAC 440VAC ME32030903 relay slim 5mm RELAY E-T-A 250VAC 28VDC ME32 relay 12vdc 6a

    ADS803

    Abstract: ADS804 ADS804E ADS805 OPA642 OPA643 OPA691 SSOP-28
    Text: ADS804 ADS 804 E SBAS068B – JANUARY 1997 – REVISED AUGUST 2002 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● HIGH SFDR: 80dB at NYQUIST HIGH SNR: 69dB LOW POWER: 180mW LOW DLE: ±0.3LSB


    Original     		PDF ADS804 SBAS068B 12-Bit, 10MHz 180mW ADS804 ADS803 ADS804E ADS805 OPA642 OPA643 OPA691 SSOP-28

    Untitled

    Abstract: No abstract text available
    Text: ADS804 ADS 804 E SBAS068B – JANUARY 1997 – REVISED AUGUST 2002 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● HIGH SFDR: 80dB at NYQUIST HIGH SNR: 69dB LOW POWER: 180mW LOW DLE: ±0.3LSB


    Original     		PDF ADS804 SBAS068B 12-Bit, 10MHz 180mW ADS804

    CLC410

    Abstract: CLC410AJE CLC410AJP M08A N08A an300-1
    Text: CLC410 Fast Settling, Video Op Amp with Disable General Description Features The current-feedback CLC410 is a fast settling, wideband, monolithic op amp with fast disable/enable feature. Designed for low gain applications AV = ± 1 to ± 8 , the CLC410 consumes only 160mW of power (180mW max) yet


    Original     		PDF CLC410 CLC410 160mW 180mW 200MHz 100ns) 200ns) CLC410AJE CLC410AJP M08A N08A an300-1

    cmos bandgap reference

    Abstract: ADS805 ADS803 ADS804 ADS804E OPA642 OPA643 OPA691 SSOP-28
    Text: ADS804 ADS 804 E SBAS068B – JANUARY 1997 – REVISED AUGUST 2002 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● HIGH SFDR: 80dB at NYQUIST HIGH SNR: 69dB LOW POWER: 180mW LOW DLE: ±0.3LSB


    Original     		PDF ADS804 SBAS068B 12-Bit, 10MHz 180mW ADS804 ADS803 cmos bandgap reference ADS805 ADS804E OPA642 OPA643 OPA691 SSOP-28

    ML520G55

    Abstract: ML5xx55
    Text: MITSUBISHI LASER DIODES E V I T A T N TE TYPE NAME ML5xx55 LD SERIES FOR DISPLAY SYSTEM ML520G55 DESCRIPTION FEATURES Mitsubishi ML5xx55 is a high-power, high-efficient • High Output Power: 180mW CW semiconductor laser diode which provides emission • High Efficiency: 0.95mW/mA (typ.)


    Original     		PDF ML5xx55 ML520G55 180mW 95mW/mA 638nm 180mW. TLDE-P1072 ML520G55

    IR-Laser-Diode 808nm

    Abstract: 808nm laser diode IR-Laser-Diode 808nm 8018 electrical symbols diode TO-18 package TO18 Laser 808nm TO18 Laser 808nm 300 mw
    Text: 8018-4200-00 Specifications Device Package Type 808nm 180mW IR Laser Diodes 1.Common Laser Diode TO-18 φ5.6mm TO-5(φ9.0mm) 50um Aperture Broad Area •Absolute Maximum Ratings(Tc=25℃) Characteristics Symbols Optical Output Po Reverse Voltage Laser Vr


    Original     		PDF 808nm 180mW 180mW 100mW 150mW IR-Laser-Diode 808nm 808nm laser diode IR-Laser-Diode 8018 electrical symbols diode TO-18 package TO18 Laser 808nm TO18 Laser 808nm 300 mw

    Untitled

    Abstract: No abstract text available
    Text: ADS804 ADS 804 E SBAS068B – JANUARY 1997 – REVISED AUGUST 2002 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● HIGH SFDR: 80dB at NYQUIST HIGH SNR: 69dB LOW POWER: 180mW LOW DLE: ±0.3LSB


    Original     		PDF ADS804 SBAS068B 12-Bit, 10MHz 180mW ADS804

    corning fiber optic cables

    Abstract: Semiconductor Laser International Corporation
    Text: PUMP MODULES PUMP SOURCES FOR OPTICAL COMMUNICATIONS SLI BTF14-980P180 Specifications • Wavelength 980nm • 180mW • Optional Fiber Bragg grating stabilization available. • Self contained thermistor and TEC • TelcordiaTM GR-468-CORE compliant Functions


    Original     		PDF BTF14-980P180 980nm 180mW GR-468-CORE 200mW BTF14-980P180 980nm. 500mW. corning fiber optic cables Semiconductor Laser International Corporation

    Untitled

    Abstract: No abstract text available
    Text: ADS804 ADS 804 E SBAS068B – JANUARY 1997 – REVISED AUGUST 2002 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS ● ● ● ● ● ● ● ● ● ● HIGH SFDR: 80dB at NYQUIST HIGH SNR: 69dB LOW POWER: 180mW LOW DLE: ±0.3LSB


    Original     		PDF ADS804 SBAS068B 12-Bit, 10MHz 180mW ADS804

    Untitled

    Abstract: No abstract text available
    Text: RCJ160N20 Nch 200V 16A Power MOSFET Datasheet lOutline VDSS 200V RDS on (Max.) 180mW ID 16A PD 40W lFeatures (2) LPT(S) (SC-83) (1) (3) lInner circuit 1) Low on-resistance. (1) Gate (2) Drain (3) Source 2) Fast switching speed. 3) Drive circuits can be simple.


    Original     		PDF RCJ160N20 180mW SC-83) R1120A

    RLD78PZW1

    Abstract: laser diode for rw drive
    Text: RLD78PZW1 Laser Diodes AlGaAs laser diode RLD78PZW1 The RLD78PZW1 is infrared laser diode high power output type pulse 150mW, CW 95mW . This is the best for optical disk drive use, such as CD-R/RW. !Applications Max. X24 speed CD-R/RW drives. !Features 1) Absolute maximum optical power output : pulse 180mW


    Original     		PDF RLD78PZW1 RLD78PZW1 150mW, 180mW CW95mW 784nm laser diode for rw drive

    GH0781JA6C

    Abstract: No abstract text available
    Text: Laser Diodes GH0781JA6C GH0781JA6C High Power Laser Diode for MAX. ✕32 • ■ Speed CD-R Drive 784nm-pulse 180mW Outline Dimensions (Unit : mm) ❇2 1±0.15 Applications 0.4±0.1 ø1.6±0.1 Emission point (1) CD-R drives (2) CD-RW drives 0.5 MIN. 1.27±0.08


    Original     		PDF GH0781JA6C 784nm-pulse 180mW) 120mW 784nm GH0781JA6C

    LSE B10 transformer

    Abstract: LSE B9 transformer
    Text: B U R R - B R O W N <i [ ADS804 ] DEMO BOARD AVAILABLE 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER APPLICATIONS FEATURES • HIGH SFDR: 80dB at NYQUIST IF AND BASEBAND DIGITIZATION • HIGH SNR: 69dB CCD IMAGING • LOW POWER: 180mW SCANNERS • SMALL 28-PIN SSOP AND SOIC PACKAGES


    OCR Scan     		PDF ADS804 12-Bit, 10MHz 180mW 28-PIN ADS804 12-bit LSE B10 transformer LSE B9 transformer

    Untitled

    Abstract: No abstract text available
    Text: B U R R -B R O W N ADS804 DEMO BOARD AVAILABLE 12-Bit, 10MHz Sampling ANALOG-TO-DIGITAL CONVERTER FEATURES APPLICATIONS • HIGH SFDR: 80dB at NYQUIST IF AND BASEBAND DIGITIZATION • HIGH SNR: 69dB CCD IMAGING • LOW POWER: 180mW SCANNERS • SMALL 28-LEAD SSOP AND SOIC PACKAGES


    OCR Scan     		PDF ADS804 12-Bit, 10MHz 180mW 28-LEAD ADS804 12-bit

    Untitled

    Abstract: No abstract text available
    Text: HM6787 Series Maintenance Only Refer to HM6787HA Series 66536-word x 1-bit High Speed Hi-BiCMOS Static RAM • FEATURES HM 6787P Series • • Super Fast Access Time: 25ns/30ns max. Low Power Dissipation (DC): Operating 180mW (typ) • • • High Driving Capability: lo c 16mA


    OCR Scan     		PDF HM6787 66536-word 25ns/30ns 180mW 22-pin HM6787HA 6787P DP-22NB) 6787P-25

    HM6116P-3

    Abstract: HM6116LP-3 HM6116P-4 HM6116 6116fp HM6116LP HM6116LP-2 HM6116LP-3 HM6116LP3 HM6116LP-4 HM6116P3 HM6116FP-3
    Text: Maintenance Only HM6116 Serles 2048-word x 8-bit High Spaed CMOS Static RAM •FEA TU R ES HM6116P Series • • Single 5V Supply High speed: Fast Access Time • Low Power Standby and • • • 180mW typ. 160mW (typ.) (L-version) Completely Static RAM:


    OCR Scan     		PDF HM6116 2048-word HM6116P 120ns/150ns/200ns 100fiW 180mW 160mW HM6116P-3 HM6116P-4 HM6116LP-2 HM6116LP-3 6116fp HM6116LP HM6116LP-2 HM6116LP-3 HM6116LP3 HM6116LP-4 HM6116P3 HM6116FP-3