M2631
Abstract: M-262 M797 m795
Text: Handles & Feet 1427J M3255-2001 • 8.5” 216mm long • .77” (20mm) width • .19” (5mm) height • 7.25” (184mm) mounting centers • chrome caps on a fluted soft vinyl strap with a spring steel core • 50 lb. (23 kg) load capacity • hardware included
|
Original
|
PDF
|
1427J
216mm)
184mm)
M3255-2001
194mm)
164mm)
1427K
128mm)
104mm)
1421T9BK
M2631
M-262
M797
m795
|
MPSA65
Abstract: CBVK741B019 F63TNR MMBTA65 MPSA64 PN2222N PZTA65 bel 188 transistor
Text: MMBTA65 PZTA65 C C E E C B TO-92 SOT-23 E C B B SOT-223 Mark: 2W PNP Darlington Transistor This device is designed for applications requiring extremely high current gain at currents to 800 mA. Sourced from Process 61. See MPSA64 for characteristics. Absolute Maximum Ratings*
|
Original
|
PDF
|
MMBTA65
PZTA65
OT-23
OT-223
MPSA64
OT-223
MPSA65
CBVK741B019
F63TNR
MMBTA65
PN2222N
PZTA65
bel 188 transistor
|
On semiconductor date Code sot-223
Abstract: BCP56 CBVK741B019 F63TNR F852 PN2222A pcb thermal sot-223 4 layer sot-223 package dimensions
Text: BCP56 BCP56 C B C E SOT-223 NPN General Purpose Amplifier These devices are designed for general purpose medium power amplifiers and switches requiring collector currents to 1A. Sourced from Process 39. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
BCP56
OT-223
On semiconductor date Code sot-223
BCP56
CBVK741B019
F63TNR
F852
PN2222A
pcb thermal sot-223 4 layer
sot-223 package dimensions
|
FDR835N
Abstract: 831N
Text: FDR6678A 30V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
|
Original
|
PDF
|
FDR6678A
FDR835N
831N
|
PART NUMBER MARKING SC70-6
Abstract: pin configuration NPN transistor 2N3904 MARKING CODE 21 SC70
Text: FFB3946 FFB3946 E2 B2 C1 Package: SC70-6 Device Marking: .AB Note: The " . " dot signifies Pin 1 C2 B1 Transistor 1 is NPN device, Transistor 2 is PNP device. E1 NPN & PNP General Purpose Amplifier SC70-6 Surface Mount Package ThIs dual complementary device was designed for use as a general purpose amplifier and switching
|
Original
|
PDF
|
FFB3946
SC70-6
2N3904
2N3906
PART NUMBER MARKING SC70-6
pin configuration NPN transistor 2N3904
MARKING CODE 21 SC70
|
Untitled
Abstract: No abstract text available
Text: FDT434P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features This P-Channel 2.5V specified MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain
|
Original
|
PDF
|
FDT434P
|
F852 transistor
Abstract: No abstract text available
Text: FDT439N N-Channel 2.5V Specified Enhancement Mode Field Effect Transistor General Description Features This N-Channel Enhancement mode field effect transistor is produced using Fairchild Semiconductor's proprietary, high cell density, DMOS technology. This very high
|
Original
|
PDF
|
FDT439N
F852 transistor
|
Untitled
Abstract: No abstract text available
Text: FDR8305N Dual N-Channel 2.5V Specified PowerTrench MOSFET General Description Features These N-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for
|
Original
|
PDF
|
FD8305N
FDR8305N
|
Untitled
Abstract: No abstract text available
Text: FDC6327C Dual N & P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description Features These N & P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate
|
Original
|
PDF
|
FDC6327C
|
Untitled
Abstract: No abstract text available
Text: FDC5612 60V N-Channel PowerTrenchTM MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 4.3 A, 60 V. RDS ON = 0.055 W
|
Original
|
PDF
|
FDC5612
|
Untitled
Abstract: No abstract text available
Text: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to
|
Original
|
PDF
|
FDG6301N
|
c3 SOT-223
Abstract: CBVK741B019 F63TNR F852 NDT452P PN2222A
Text: September 1996 NDT452P P-Channel Enhancement Mode Field Effect Transistor General Description Features -3A, -30V. RDS ON = 0.18Ω @ VGS = -10V. Power SOT P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very
|
Original
|
PDF
|
NDT452P
c3 SOT-223
CBVK741B019
F63TNR
F852
NDT452P
PN2222A
|
SSOT-6
Abstract: CBVK741B019 F63TNR FDC602P FDC633N 55A4 V1527
Text: FDC602P P-Channel 2.5V PowerTrench Specified MOSFET General Description Features This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage
|
Original
|
PDF
|
FDC602P
SSOT-6
CBVK741B019
F63TNR
FDC602P
FDC633N
55A4
V1527
|
P-Channel MOSFET code L1A S
Abstract: CBVK741B019 F63TNR FDC6324L FDC633N SOIC-16 in20v
Text: March 1999 FDC6324L Integrated Load Switch General Description Features These Integrated Load Switches are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state
|
Original
|
PDF
|
FDC6324L
P-Channel MOSFET code L1A S
CBVK741B019
F63TNR
FDC6324L
FDC633N
SOIC-16
in20v
|
|
|
sod123 diode
Abstract: MARKING CODE diode sod123 W1 sod mark code e2 SOD123 MARKING CODE CBVK741B019 F63TNR MMSZ5221B MMSZ5233B
Text: MMSZ5233B DISCRETE POWER AND SIGNAL TECHNOLOGIES 5% TOLERANCE General Description: Features: Half watt, General purpose, Medium Current Surface Mount Zener in the SOD-123 package. The SOD-123 package has the same footprint as the glass mini-melf LL-34 package &
|
Original
|
PDF
|
MMSZ5233B
OD-123
LL-34)
sod123 diode
MARKING CODE diode sod123 W1
sod mark code e2
SOD123 MARKING CODE
CBVK741B019
F63TNR
MMSZ5221B
MMSZ5233B
|
Marking Code m sc70-6
Abstract: PART NUMBER MARKING SC70-6 FDG6331L 125OC AN1030 CBVK741B019 F63TNR FDG6302P SC70-6
Text: FDG6331L Integrated Load Switch General Description Features This device is particularly suited for compact power management in portable electronic equipment where 2.5V to 8V input and 0.8A output current capability are needed. This load switch integrates a small N-Channel
|
Original
|
PDF
|
FDG6331L
SC70-6
SC70-6opment.
Marking Code m sc70-6
PART NUMBER MARKING SC70-6
FDG6331L
125OC
AN1030
CBVK741B019
F63TNR
FDG6302P
|
SC70-6 SSOT6
Abstract: SSOT-6 .318 SC70-6 ic 311 pdf datasheets CBVK741B019 F63TNR FDG6302P FFB2222A FFB2227A FFB2907A
Text: E2 B2 C2 TRANSISTOR TYPE C1 C1 B1 E1 NPN C2 B2 E2 PNP E1 C1 C2 SC70-6 Mark: .AA FFB2227A / FMB2227A FMB2227A FFB2227A B2 B1 pin #1 E1 SuperSOT-6 Dot denotes pin #1 E2 pin #1 B1 Mark: .001 Dot denotes pin #1 NPN & PNP General Purpose Amplifier This complementary device is for use as a medium power amplifier and
|
Original
|
PDF
|
SC70-6
FFB2227A
FMB2227A
FFB2227A
FFB2222A
FFB2907A
SC70-6 SSOT6
SSOT-6
.318 SC70-6
ic 311 pdf datasheets
CBVK741B019
F63TNR
FDG6302P
FFB2222A
FFB2907A
|
CBVK741B019
Abstract: F63TNR FDC3512 FDC633N
Text: FDC3512 80V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for
|
Original
|
PDF
|
FDC3512
CBVK741B019
F63TNR
FDC3512
FDC633N
|
CBVK741B019
Abstract: F63TNR FDG6302P FDG6308P SC70-6 marking code 04 sc70-6
Text: FDG6308P P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s advanced low voltage PowerTrench process. It has been optimized for battery power management applications. • –0.6 A, –20 V.
|
Original
|
PDF
|
FDG6308P
SC70-6
SC70-6
CBVK741B019
F63TNR
FDG6302P
FDG6308P
marking code 04 sc70-6
|
W3 marking SOT-223
Abstract: CBVK741B019 F63TNR F852 FDT3612 PN2222A
Text: FDT3612 100V N-Channel PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. • 3.7 A, 100 V. RDS ON = 120 mΩ @ VGS = 10 V
|
Original
|
PDF
|
FDT3612
W3 marking SOT-223
CBVK741B019
F63TNR
F852
FDT3612
PN2222A
|
Untitled
Abstract: No abstract text available
Text: Si3445DV P-Channel 1.8V Specified PowerTrench MOSFET General Description Features This P-Channel 1.8V specified MOSFET uses Fairchild’s low voltage PowerTrench process. It has been optimized for battery power management applications. • –5.5 A, –20 V.
|
Original
|
PDF
|
Si3445DV
|
MPS A06 transistor
Abstract: MPS A06 MPSA06 "cross reference" mps 0724 marking A06 amplifier FAIRCHILD SOT-223 MARK Marking code mps
Text: MMBTA06 PZTA06 C C E E C B TO-92 B B SOT-23 E C SOT-223 Mark: 1G NPN General Purpose Amplifier This device is designed for general purpose amplifier applications at collector currents to 300 mA. Sourced from Process 33. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted
|
Original
|
PDF
|
MPSA06
MMBTA06
PZTA06
MPSA06
MMBTA06
OT-23
OT-223
MPSA06RA
O-92-3
MPS A06 transistor
MPS A06
MPSA06 "cross reference"
mps 0724
marking A06 amplifier
FAIRCHILD SOT-223 MARK
Marking code mps
|
Untitled
Abstract: No abstract text available
Text: 1 9 9 9 =M l C O N D U C T O R tm FDR838P P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2 .5 V specified M O SFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the
|
OCR Scan
|
PDF
|
FDR838P
allert01
|
Untitled
Abstract: No abstract text available
Text: =M l C O N D U C T O R tm FDC6306P Dual P-Channel 2.5V Specified PowerTrench MOSFET General Description Features These P-Channel 2.5V specified MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize
|
OCR Scan
|
PDF
|
FDC6306P
|
