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    FDG6301N Price and Stock

    onsemi FDG6301N

    MOSFET 2N-CH 25V 0.22A SC88
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    DigiKey FDG6301N Digi-Reel 59,163 1
    • 1 $0.68
    • 10 $0.423
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    FDG6301N Cut Tape 59,163 1
    • 1 $0.68
    • 10 $0.423
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    FDG6301N Reel 57,000 3,000
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    Avnet Americas FDG6301N Reel 12,000 3,000
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    FDG6301N Reel 6,000
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    Mouser Electronics FDG6301N 17,980
    • 1 $0.62
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    • 100 $0.269
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    Newark FDG6301N Cut Tape 1,701 5
    • 1 $0.533
    • 10 $0.426
    • 100 $0.293
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    FDG6301N Reel 3,000
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    Future Electronics FDG6301N Reel 63,000 9 Weeks 3,000
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    FDG6301N Reel 3,000 9 Weeks 3,000
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    FDG6301N Reel 9 Weeks 6,000
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    Onlinecomponents.com FDG6301N 12,000
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    TME FDG6301N 523 1
    • 1 $0.374
    • 10 $0.312
    • 100 $0.239
    • 1000 $0.16
    • 10000 $0.148
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    Ameya Holding Limited FDG6301N 255,890
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    Richardson RFPD FDG6301N 6,000
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    Avnet Asia FDG6301N 10 Weeks 6,000
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    Avnet Silica FDG6301N 3,000 11 Weeks 3,000
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    EBV Elektronik FDG6301N 11 Weeks 3,000
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    Flip Electronics FDG6301N 600
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    Master Electronics FDG6301N 12,000
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    Wuhan P&S FDG6301N 1,942 1
    • 1 $0.3291
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    • 100 $0.2101
    • 1000 $0.1593
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    onsemi FDG6301N-F085

    MOSFET 2N-CH 25V 0.22A SC88
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    DigiKey FDG6301N-F085 Reel
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    Newark FDG6301N-F085 Reel 3,000
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    Rochester Electronics FDG6301N-F085 1,491 1
    • 1 $0.1065
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    • 100 $0.1001
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    TME FDG6301N-F085 3
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    onsemi FDG6301N_D87Z

    MOSFET 2N-CH 25V 0.22A SC88
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    DigiKey FDG6301N_D87Z Reel 10,000
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    onsemi FDG6301N-F085P

    MOSFET 2N-CH 25V 0.22A SC70-6
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    DigiKey FDG6301N-F085P Reel
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    Rochester Electronics FDG6301N-F085P 264,295 1
    • 1 $0.1344
    • 10 $0.1344
    • 100 $0.1263
    • 1000 $0.1142
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    Flip Electronics FDG6301N-F085P 600
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    onsemi FDG6301N_F085

    N-Channel Power Mosfet/Tape Reel |Onsemi FDG6301N_F085
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    Newark FDG6301N_F085 Reel 3,000
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    FDG6301N Datasheets (10)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FDG6301N Fairchild Semiconductor Dual N-Channel, Digital FET Original PDF
    FDG6301N Fairchild Semiconductor Dual N-Channel, Digital FET Original PDF
    FDG6301N Toshiba Power MOSFETs Cross Reference Guide Original PDF
    FDG6301N Fairchild Semiconductor Dual N-Channel, Digital FET Scan PDF
    FDG6301N Fairchild Semiconductor Dual N-Channel, Digital FET Scan PDF
    FDG6301N_D87Z Fairchild Semiconductor Transistor Mosfet N-CH 25V 0.22A 6SC-70 T/R Original PDF
    FDG6301N_F085 Fairchild Semiconductor FETs - Arrays, Discrete Semiconductor Products, MOSFET 2N-CH 25V 220MA SC70-6 Original PDF
    FDG6301N-F085 ON Semiconductor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays - MOSFET 2N-CH 25V 0.22A SC70-6 Original PDF
    FDG6301N-F085P ON Semiconductor Uncategorized - Miscellaneous - DUAL NMOS SC70-6 25V 4OHM Original PDF
    FDG6301N_NL Fairchild Semiconductor Dual N-Channel Digital FET Original PDF

    FDG6301N Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: November 1998 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6301N PDF

    ultra FAST DMOS FET Switches

    Abstract: FDG6301N SC70-6
    Text: FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. RDS ON = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's


    Original     		FDG6301N ultra FAST DMOS FET Switches SC70-6 PDF

    F63TNR

    Abstract: FDG6301N FDG6302P SC70-6 CBVK741B019
    Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6301N F63TNR FDG6301N FDG6302P SC70-6 CBVK741B019 PDF

    ZENER SINGLE COLOR CODE

    Abstract: CBVK741B019 F63TNR FDG6301N FDG6302P SC70-6
    Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6301N ZENER SINGLE COLOR CODE CBVK741B019 F63TNR FDG6301N FDG6302P SC70-6 PDF

    FDG6301N

    Abstract: SC70-6
    Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6301N FDG6301N SC70-6 PDF

    Untitled

    Abstract: No abstract text available
    Text: July 1999 FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to


    Original     		FDG6301N PDF

    Untitled

    Abstract: No abstract text available
    Text: FDG6301N_F085 Dual N-Channel, Digital FET General Description Features 25 V, 0.22 A continuous, 0.65 A peak. RDS ON = 4 Ω @ VGS= 4.5 V, RDS(ON) = 5 Ω @ VGS= 2.7 V. These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's


    Original     		FDG6301N PDF

    Common rail piezo injector driver

    Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
    Text: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or


    Original     		PDF

    OPA2333-HT

    Abstract: SBOS483C OPA2333 OPA2333SJD Amplifier k thermocouple texas
    Text: OPA2333-HT www.ti.com SBOS483C – JULY 2009 – REVISED DECEMBER 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-HT FEATURES 1 • • • • • • Low Offset Voltage: 26 mV Max 0.01-Hz to 10-Hz Noise: 1.5 mVPP


    Original     		OPA2333-HT SBOS483C 01-Hz 10-Hz C/210 OPA2333-HT SBOS483C OPA2333 OPA2333SJD Amplifier k thermocouple texas PDF

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)


    Original     		OPA333 OPA2333 SBOS351C OPA333 PDF

    Untitled

    Abstract: No abstract text available
    Text: OPA369 OPA2369 BurrĆBrown Products from Texas Instruments SBOS414A – AUGUST 2007 – REVISED SEPTEMBER 2007 1.8V, 1 A max, Zerø-Crossover RAIL-TO-RAIL I/O OPERATIONAL AMPLIFIER FEATURES DESCRIPTION 1 • • • • • • 2 ZERØ-CROSSOVER LOW POWER: 1μA max


    Original     		OPA369 OPA2369 SBOS414A SC70-5, OT23-8, OPA369 OPA2369 OPAx369 PDF

    INA321A

    Abstract: No abstract text available
    Text: OPA2333A-Q1 www.ti.com. SBOS463 – DECEMBER 2008 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER


    Original     		OPA2333A-Q1 SBOS463 01-Hz 10-Hz INA321A PDF

    02333Q

    Abstract: INA321A OPA2333 OPA2333AQDRQ1 REF3140 SBOS463A
    Text: OPA2333-Q1 www.ti.com SBOS463A – DECEMBER 2008 – REVISED JUNE 2010 1.8-V MICROPOWER CMOS OPERATIONAL AMPLIFIER ZERO-DRIFT SERIES Check for Samples: OPA2333-Q1 FEATURES 1 • • • • • • • D OR DGK PACKAGE TOP VIEW Qualified for Automotive Applications


    Original     		OPA2333-Q1 SBOS463A 01-Hz 10-Hz 500nV/div 02333Q INA321A OPA2333 OPA2333AQDRQ1 REF3140 SBOS463A PDF

    Backing Up Epson Toyocom Real-Time Clock Chips

    Abstract: No abstract text available
    Text: AN-1006 Application Note Backing Up Epson Toyocom Real-Time Clock Chips A Demonstration Tool for Cymbet EnerChip™ Solid State Thin Film Rechargeable Batteries is fully charged. At full charge, the current is in the sub-nanoamps. A simple but effective technique prevents the battery from discharging


    Original     		AN-1006 RTC-8564 MMBT5087LT1G FDG6301N FDG6304P CBC050 CBC012 ZR40401F41TA Backing Up Epson Toyocom Real-Time Clock Chips PDF

    smd diode Mbr0540

    Abstract: CMD17-21VGC/TR8 4301 SMD TRANSISTOR SG 21 DIODE SMD smd transistor 2p data SSQ-105-02-T-D-RA Caplugs VC-234-8 Oscilloscope USB 100mhz Schematic APXA160ARA331MJC
    Text: Application Note 1493 ZL6100EVAL1Z Evaluation Board The ZL6100 is an integrated mixed-signal power conversion and management IC that combines an efficient step-down DC/DC converter with key power and thermal management functions in a single package. The ZL6100 incorporates current sharing and adaptive


    Original     		ZL6100EVAL1Z ZL6100 AN1493 smd diode Mbr0540 CMD17-21VGC/TR8 4301 SMD TRANSISTOR SG 21 DIODE SMD smd transistor 2p data SSQ-105-02-T-D-RA Caplugs VC-234-8 Oscilloscope USB 100mhz Schematic APXA160ARA331MJC PDF

    Inventec VAIL 2.0

    Abstract: PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001
    Text: DAVOS-DF PV-1-BUILD 2004.11.04 EE DATE DATE POWER DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : DAVOS-DF SIZE CODE A3 CS SHEET DOC. NUMBER REV PC9603 1 A01 OF 65 TABLE OF CONTENTS


    Original     		PC9603 OTS144058 10/27---update Inventec VAIL 2.0 PC9603 Inventec INVENTEC davos INVENTEC DAVOS 3.0 GST5009 C5761 Compaq P58 VSS28 CN5-001 PDF

    RT9713

    Abstract: C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU
    Text: VAIL SI2-BUILD-FINAL 2004.08.31 EE DATE POWER DATE DRAWER DESIGN CHECK RESPONSIBLE DATE CHANGE NO. REV 3 SIZE = FILE NAME : XXXX-XXXXXX-XX P/N XXXXXXXXXXXX INVENTEC TITLE VER : VAIL1.0 SIZE CODE A3 CS SHEET DOC. NUMBER REV Model_No 1 OF AX2 67 TABLE OF CONTENTS


    Original     		V/5V/12V) 31-Aug-2004 CN6035 RT9713 C6091 C6093 R61531 c6090 C6085 c6092 inventec vail 1.0 Inventec 070912FR015S200ZU PDF

    c5586

    Abstract: c5679 C5694 c5487 47N253 c5664 c5598 c5717 C5488 ez 4r 823
    Text: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD&TV CONNECTOR INTERFACE 22- CRT INTERFACE 23-25- ICH4-M


    Original     		16-Jun-2004 QC5420 R1388 C5704 LP2996MRX 6-May-2004 c5586 c5679 C5694 c5487 47N253 c5664 c5598 c5717 C5488 ez 4r 823 PDF

    C5478

    Abstract: dd5011 C5088 c5468 c5470 c5388 C5480 c5344 C5386 Inventec
    Text: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-12 - MONTARA-GM 13-16 - DDR 17 - TV ENCODER 18 - CRT 19 - LVDS 21-23- ICH4-M 24 - HDD CONNECTOR 25 - CD-ROM CONNECTOR


    Original     		C5332 MCH66 RVSD10 RVSD11 PIN90X55 PAD506 FC8496 C5478 dd5011 C5088 c5468 c5470 c5388 C5480 c5344 C5386 Inventec PDF

    12c675

    Abstract: 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015
    Text: Approvals Revisions REV ECN NO. Description Of Change DATE DFTG. ENGR. REL. TABLE OF CONTENTS PAGE 4 - CLOCK GENERATOR 5-7 - BANIAS PROCESSOR 8-10 - ODEM 11-14 - DDR 15-18 - ATI_M10_P 19-20 - VGA DDR 21 -LCD INTERFACE 22-24- ICH4-M 25 - HDD CONNECTOR 26 - CD-ROM CONNECTOR


    Original     		BLM11A121S C2507 C2505 R2502 R2509 127107MH020G200ZT FIX2501 FIX2502 FIX2500 S2501 12c675 8541P Inventec tpa6017 sc1470I LPC47N249 *8541p L1019 R502 3443 070435FR015 PDF

    Untitled

    Abstract: No abstract text available
    Text: BurrĆBrown Products from Texas Instruments OPA333 OPA2333 SBOS351C – MARCH 2006 – REVISED MAY 2007 1.8V, microPOWER CMOS OPERATIONAL AMPLIFIERS Zerø-Drift Series FEATURES • • • • • • • • DESCRIPTION LOW OFFSET VOLTAGE: 10 V max ZERO DRIFT: 0.05μV/°C (max)


    Original     		OPA333 OPA2333 SBOS351C PDF

    Untitled

    Abstract: No abstract text available
    Text: F A IR C H IL D July 1999 SEM IC O N D U C TO R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    OCR Scan     		FDG6301N SC70-6 SC70-6 PDF

    Marking Code m sc70-6

    Abstract: jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n F63TNR bs sc70 Marking Code m sc70-6 .25 bb sc70-6
    Text: July 1999 F = / \ IR G H Il_ D S E M IC O N D U C T O R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild’s proprietary, high cell density, DMOS technology. This


    OCR Scan     		FDG6301N 34bTb SC70-6 331-ryp SC-70, Marking Code m sc70-6 jedec SC-70-6 package SC70-6 SPI SC70-6 Marking Code m sc70-6 25 fdg6301n F63TNR bs sc70 Marking Code m sc70-6 .25 bb sc70-6 PDF

    A9 SOT-23

    Abstract: zener sot-23 a9 CBVK741B019 F63TNR FDG6301N SC70-6 land pattern sc70-6
    Text: November 1998 FAIRCHILD S E M IC O N D U C T O R tm FDG6301N Dual N-Channel, Digital FET General Description Features These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    OCR Scan     		FDG6301N SC70-6 SC70-6 A9 SOT-23 zener sot-23 a9 CBVK741B019 F63TNR FDG6301N land pattern sc70-6 PDF