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    E1751E20

    Abstract: EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-MQ 256M words  8 bits, 2133Mbps EDJ2116DEBG-MQ (128M words  16 bits, 2133Mbps) EDJ2108DEBG-JQ (256M words  8 bits, 1866Mbps) EDJ2116DEBG-JQ (128M words  16 bits, 1866Mbps) Specifications Features


    Original     		EDJ2108DEBG-MQ 2133Mbps) EDJ2116DEBG-MQ EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) E1751E20 EDJ2108DEBG ELPIDA DDR3 2G DDR3 2G 1866 elpida EDJ2108DEBG-MQ DDR3-2133L PDF

    j2108

    Abstract: EDJ2116DEBG-JQ EDJ2108DEBG-JQ EDJ2108DEBG EDJ2116DEBG DDR3-1866L persistent write 96-ball FBGA Elpida DDR3 DDR3 2G 1866 elpida
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-JQ 256M words x 8 bits,1866Mbps EDJ2116DEBG-JQ (128M words × 16 bits,1866Mbps) Specifications Features • Density: 2G bits • Organization:  32M words × 8 bits × 8 banks (EDJ2108DEBG)  16M words × 16 bits × 8 banks (EDJ2116DEBG)


    Original     		EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) 78-ball 96-ball j2108 EDJ2116DEBG-JQ EDJ2108DEBG-JQ EDJ2108DEBG EDJ2116DEBG DDR3-1866L persistent write 96-ball FBGA Elpida DDR3 DDR3 2G 1866 elpida PDF

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY DATA SHEET 2G bits DDR3 SDRAM EDJ2108DEBG-JQ 256M words x 8 bits,1866Mbps EDJ2116DEBG-JQ (128M words × 16 bits,1866Mbps) Specifications Features • Density: 2G bits • Organization: ⎯ 32M words × 8 bits × 8 banks (EDJ2108DEBG) ⎯ 16M words × 16 bits × 8 banks (EDJ2116DEBG)


    Original     		EDJ2108DEBG-JQ 1866Mbps) EDJ2116DEBG-JQ EDJ2108DEBG) EDJ2116DEBG) 78-ball 96-ball PDF

    DDR3-1866

    Abstract: IS46TR DDR3-1600 IS43TR16640A DDR3 IS43TR16128A IS43TR16640 DDR3 timing parameters IS43TR82560A 128Mx16
    Text: DDR3 SDRAM Up to 1866Mbps data rate ► Applications: • Telecom/Networking Access Nodes PON OLT, DSLAM, CMTS, Wireless Aggregation Nodes Switches and Routers Packet Optical Transport Network Storage • Automotive Infotainment Telematics Driver Information Systems


    Original     		1866Mbps 96-ball 78-ball IS43TR16640A IS43TR81280A IS43TR16128A IS43TR82560A 64Mx16 128Mx8 128Mx16 DDR3-1866 IS46TR DDR3-1600 DDR3 IS43TR16640 DDR3 timing parameters PDF

    96-ball FBGA

    Abstract: No abstract text available
    Text: COVER PRELIMINARY DATA SHEET 1G bits DDR3L SDRAM EDJ1108EJBG 128M words x 8 bits EDJ1116EJBG (64M words × 16 bits) Specifications Features • Density: 1G bits • Organization — 16M words × 8 bits × 8 banks (EDJ1108EJBG) — 8M words × 16 bits × 8 banks (EDJ1116EJBG)


    Original     		EDJ1108EJBG EDJ1116EJBG EDJ1108EJBG) EDJ1116EJBG) 78-ball 96-ball 1866Mbps/1600Mbps/1333Mbps 96-ball FBGA PDF

    DDR3-1866 RDIMM SPD JEDEC

    Abstract: M392B5670GB0-CF8
    Text: Rev. 1.01, Dec. 2010 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin 78FBGA 256Mbx4 256Mx72 K4B1G0446G-BC* DDR3-1866 RDIMM SPD JEDEC M392B5670GB0-CF8 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M471B2873GB0 M471B5673GB0 204pin Unbuffered SODIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M471B2873GB0 M471B5673GB0 204pin 78FBGA K4B1G0846G 128Mbx8 256Mx64 PDF

    M471B5173

    Abstract: No abstract text available
    Text: Rev. 1.0, Apr. 2012 M471B5173CB0 M471B1G73CB0 204pin Unbuffered SODIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M471B5173CB0 M471B1G73CB0 204pin 78FBGA estoppel512M K4B4G0846C 512Mx8 1Gx64 M471B5173 PDF

    K4B4G0446D-MC

    Abstract: k4b4g0446d M393B5270DH0
    Text: Rev. 1.3, Jul. 2011 M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin Registered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		M393B5773DH0 M393B5273DH0 M393B5270DH0 M393B1K70DH0 M393B1K73DH0 M393B2K70DM0 240pin 78FBGA K4B4G0446D-MC k4b4g0446d PDF

    M378B5273EB0

    Abstract: K4B2G0846E-BC
    Text: Rev. 1.0, Jan. 2012 M378B5773EB0 M391B5773EB0 M378B5273EB0 M391B5273EB0 240pin Unbuffered DIMM based on 2Gb E-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M378B5773EB0 M391B5773EB0 M378B5273EB0 M391B5273EB0 240pin 78FBGA 256Mbx8 512Mx64/x72 M378/91B5273EB0 K4B2G0846E-BC K4B2G0846E-BC PDF

    DDR3-1866 RDIMM SPD JEDEC

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul. 2011 M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin VLP Registered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M392B2873GB0 M392B5673GB0 M392B5670GB0 240pin 78FBGA 256Mbx4 256Mx72 K4B1G0446G-BC* DDR3-1866 RDIMM SPD JEDEC PDF

    JESD-79

    Abstract: ddr3 2133 jesd79 JESD79-3E
    Text: NT4GC72B89C0NL K / NT4GC72C89C0NL(K) NT8GC72B4PC0NL(K) / NT8GC72C4PC0NL(K) / NT8GC72B8PC0NL(K) / NT8GC72C8PC0NL(K) NT16GC72B4NC0NL(K) / NT16GC72C4NC0NL(K) 4GB: 512Mx72 / 8GB: 1024Mx72 / 16GB: 2048M x 72 PC3-10600 / PC3-12800 / PC3-14900 Registered DDR3 SDRAM DIMM


    Original     		NT4GC72B89C0NL NT4GC72C89C0NL NT8GC72B4PC0NL NT8GC72C4PC0NL NT8GC72B8PC0NL NT8GC72C8PC0NL NT16GC72B4NC0NL NT16GC72C4NC0NL 512Mx72 1024Mx72 JESD-79 ddr3 2133 jesd79 JESD79-3E PDF

    M378B

    Abstract: No abstract text available
    Text: Rev. 1.0, Aug. 2013 M378B5173DB0 M378B1G73DB0 240pin Unbuffered DIMM based on 4Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M378B5173DB0 M378B1G73DB0 240pin 78FBGA K4B4G0846D-BCï 512Mbx8 1Gx64 M378B PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul. 2011 M471B1G73BH0 204pin Unbuffered SODIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		M471B1G73BH0 204pin 78FBGA 135mv 125mV) 512Mx8 1Gx64 K4B4G0846B PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.2, Aug. 2011 M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M378B2873GB0 M391B2873GB0 M378B5673GB0 M391B5673GB0 240pin 78FBGA 128Mbx8 256Mx64/x72 M378/91B5673GB0 K4B1G0846G-BCâ PDF

    m378b5773dh0-c

    Abstract: samsung ddr3 m378b5773dh0 K4B2G0846D-HC M378B5273DH0 spd M378
    Text: Rev. 1.4, Jul. 2011 M378B5773DH0 M391B5773DH0 M378B5273DH0 M391B5273DH0 240pin Unbuffered DIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M378B5773DH0 M391B5773DH0 M378B5273DH0 M391B5273DH0 240pin 78FBGA 256Mbx8 512Mx64/x72 M378/91B5273DH0 K4B2G0846D-HC m378b5773dh0-c samsung ddr3 K4B2G0846D-HC spd M378 PDF

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 16GB VLP Registered DDR3 SDRAM DIMM EBJ17RH4B6NA 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words  72 bits, 2 ranks • Mounting 18 pieces of 8G bits DDR3 SDRAM with DDP (FBGA)


    Original     		EBJ17RH4B6NA 2048M 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E2044E10 PDF

    Untitled

    Abstract: No abstract text available
    Text: COVER DATA SHEET 16GB Registered DDR3 SDRAM DIMM EBJ17RG4BFWD EBJ17RG4BFWP 2048M words 72 bits, 2 Ranks Specifications Features • Density: 16GB • Organization — 2048M words  72 bits, 2 ranks • Mounting 36 pieces of 4G bits DDR3 SDRAM sealed in


    Original     		EBJ17RG4BFWD EBJ17RG4BFWP 2048M 240-pin 1866Mbps/1600Mbps/1333Mbps M01E1007 E2004E10 PDF

    K4W2G1646E-BC11

    Abstract: K4W2G1646E-BC1A k4w2g1646 K4W2G1646E
    Text: Rev. 1.01, Aug. 2012 K4W2G1646E 2Gb gDDR3 SDRAM E-die 96FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		K4W2G1646E 96FBGA K4W2G1646E-BC11 K4W2G1646E-BC1A k4w2g1646 K4W2G1646E PDF

    NT5CB256M8bN-cg

    Abstract: calibration of dvm specifications NT5CB128M16BP-DI
    Text: 2Gb DDR3 SDRAM NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP Feature Table 1: CAS Latency Frequency -BE* -CG/CGI* -DI* -EJ* DDR3 L -1066-CL7 DDR3 (L)-1333-CL9 DDR3(L)-1600-CL11 Speed Bins Units DDR3-1866-CL12 Parameter Min. Max. Min. Max. Min. Max.


    Original     		NT5CB256M8BN/NT5CB128M16BP NT5CC256M8BN/NT5CC128M16BP -1066-CL7 -1333-CL9 -1600-CL11 DDR3-1866-CL12 DDR3-1600 DDR3-1866 NT5CB256M8bN-cg calibration of dvm specifications NT5CB128M16BP-DI PDF

    M471B5273DH0

    Abstract: No abstract text available
    Text: Rev. 1.31. Dec. 2010 M471B5773DH0 M471B5273DH0 204pin Unbuffered SODIMM based on 2Gb D-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M471B5773DH0 M471B5273DH0 204pin 78FBGA K4B2G0846D 256Mbx8 512Mx64 M471B5273DH0 PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.01, Dec. 2010 M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin Unbuffered DIMM based on 1Gb G-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE.


    Original     		M378B2873GB0 M391B2873GB0 M378B5673GB0 240pin 78FBGA 128Mbx8 256Mx64 K4B1G0846G-BC PDF

    M378B5173CB0

    Abstract: m378b5173 Samsung ddr3 1600 SDRAM
    Text: Rev. 1.1, Apr. 2012 M378B5173CB0 240pin Unbuffered DIMM based on 4Gb C-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND SPECIFICATIONS WITHOUT NOTICE. Products and specifications discussed herein are for reference purposes only. All information discussed


    Original     		M378B5173CB0 240pin 78FBGA 125mV 135mv 125mV) 512Mbx8 K4B4G0846C-BC M378B5173CB0 m378b5173 Samsung ddr3 1600 SDRAM PDF

    Untitled

    Abstract: No abstract text available
    Text: Rev. 1.1, Jul. 2011 M393B1G70BH0 M393B1G73BH0 M393B2G70BH0 M393B2G73BH0 M393B4G70BM0 240pin Registered DIMM based on 4Gb B-die 78FBGA with Lead-Free & Halogen-Free RoHS compliant datasheet SAMSUNG ELECTRONICS RESERVES THE RIGHT TO CHANGE PRODUCTS, INFORMATION AND


    Original     		M393B1G70BH0 M393B1G73BH0 M393B2G70BH0 M393B2G73BH0 M393B4G70BM0 240pin 78FBGA PDF