Untitled
Abstract: No abstract text available
Text: 214PIN DDR2 533 Micro-DIMM 1GB With 64Mx16 CL4 TS128MMQ64V5Q Description Placement The TS128MMQ64V5Q is a 128M x 64bits DDR2-533 J Micro-DIMM. The TS128MMQ64V5Q consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on printed circuit board
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214PIN
64Mx16
TS128MMQ64V5Q
TS128MMQ64V5Q
64bits
DDR2-533
64Mx16bits
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PDF
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Untitled
Abstract: No abstract text available
Text: MEMORY MODULE DDR SDRam 64Mx16-SOP Double Data Rate SDRam MODULE 3D 1D1G16TS1267 1Gbit DDR SDRam organized as 64Mx16 Pin Assignment Top View SOP 66 (Pitch : 0.65 mm) Features • • • • • • • • • • • • • • • • One 1Gbit DDR SDRam
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64Mx16-SOP
1D1G16TS1267
64Mx16
64Mx16bit
MMDD16064601STC
3DFP-0267-RV
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PDF
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3D2D4G72UB3478
Abstract: No abstract text available
Text: MEMORY MODULE DDR2 SDRam 64Mx72-BGA DDR2 SDRAM MODULE 3D 2D4G72UB3478 4Gbit DDR2 SDRam organized as 64Mx72, based on 64Mx16 Pin Assignment BGA 191 - 12x20 - Pitch 1.27mm Features • Organized as 64Mx72 Core supply voltage 1.8V +/- 0.1V I/O supply voltage 1.8V +/- 0.1V
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64Mx72-BGA
2D4G72UB3478
64Mx72,
64Mx16
12x20
64Mx72
3DFP-0478-REV
3D2D4G72UB3478
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PDF
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SG564643FG8N6IR
Abstract: DDR2-667-5-5-5 SG564643FG8N6KF SG564643FG8N6IL
Text: SG564643FG8N6UU May 19, 2008 Ordering Information Part Numbers Description Module Speed SG564643FG8N6DB 64Mx64 512MB , DDR2, 240-pin DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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Original
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SG564643FG8N6UU
SG564643FG8N6DB
64Mx64
512MB)
240-pin
64Mx16
DDR2-400-333,
SG564643FG8N6IR
DDR2-667-5-5-5
SG564643FG8N6KF
SG564643FG8N6IL
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A, IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2013 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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IS43/46TR16640A,
IS43/46TR16640AL
IS43/46TR81280A,
IS43/46TR81280AL
128MX8,
64MX16
cycles/64
cycles/32
1600MT/s
IS43TR81280AL
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PDF
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Untitled
Abstract: No abstract text available
Text: IS43/46TR16640B, IS43/46TR16640BL IS43/46TR81280B, IS43/46TR81280BL 128MX8, 64MX16 1Gb DDR3 SDRAM NOVEMBER 2014 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V Refresh Interval: 7.8 us (8192 cycles/64 ms) Tc= -40°C to 85°C
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IS43/46TR16640B,
IS43/46TR16640BL
IS43/46TR81280B,
IS43/46TR81280BL
128MX8,
64MX16
cycles/64
cycles/32
3TR81280BL
-125JBL
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PDF
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Untitled
Abstract: No abstract text available
Text: Preliminary HY27UF 08/16 1G2M Series HY27SF(08/16)1G2M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History Revision No. History Draft Date Remark 0.0 Initial Draft. Aug. 2004 Preliminary
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HY27UF
HY27SF
128Mx8bit
64Mx16bit)
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PDF
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NT1GC64BH8A1PS-BE
Abstract: No abstract text available
Text: NT1GC64BH8A1PS / NT2GC64B8HA1NS 1GB: 128M x 64 / 2GB: 256M x 64 PC3-8500 / PC3-10600 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333 64Mx16 1GB / 128Mx8 (2GB) SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency PC3-8500
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NT1GC64BH8A1PS
NT2GC64B8HA1NS
PC3-8500
PC3-10600
DDR3-1066/1333
64Mx16
128Mx8
PC3-8500
204-Pin
NT1GC64BH8A1PS-BE
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PDF
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H5MS1G62
Abstract: H5MS1G62MFP-J3M H5MS1G62MFP hynix mcp h5ms1g DDR400 ap die hen mcp H5MS1G62MFP-K3M
Text: 1Gbit MOBILE DDR SDRAM based on 16M x 4Bank x16 I/O Specification of 1Gb 64Mx16bit Mobile DDR SDRAM Memory Cell Array - Organized as 4banks of 16,777,216 x16 This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for
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64Mx16bit)
16bit)
H5MS1G62MFP
page22)
00Typ.
H5MS1G62
H5MS1G62MFP-J3M
hynix mcp
h5ms1g
DDR400
ap die hen mcp
H5MS1G62MFP-K3M
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PDF
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Untitled
Abstract: No abstract text available
Text: H5PS1G63EFR 1Gb 64Mx16 DDR2 SDRAM H5PS1G63EFR This document is a general product description and is subject to change without notice. Hynix Semiconductor does not assume any responsibility for use of circuits described. No patent licenses are implied. Rev. 1.1/ Oct. 2008
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H5PS1G63EFR
64Mx16)
500Mhz
84Ball
13MAX
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PDF
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PC2-6400
Abstract: sodimm pinout 200Pin SO-DIMM PC2 6400 128 m 64 64mx16 NT2GT64U8HD0BN-AC pc2-4200
Text: NT1GT64UH8D0FN / NT2GT64U8HD0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM D-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400 PC2-6400 -37B -3C -AD
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NT1GT64UH8D0FN
NT2GT64U8HD0BN
PC2-4200
PC2-5300
PC2-6400
DDR2-533/667/800
64Mx16
/128Mx8
sodimm pinout
200Pin SO-DIMM PC2 6400 128 m 64
64mx16
NT2GT64U8HD0BN-AC
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PDF
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Untitled
Abstract: No abstract text available
Text: FEDR26V01G54R-01-01 OKI Semiconductor MR26V01G54R 32M–Word x 32–Bit Page Mode Issue Date: Oct 30, 2007 P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit
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FEDR26V01G54R-01-01
MR26V01G54R
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PDF
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Untitled
Abstract: No abstract text available
Text: NT512T64UH4D0FY / NT1GT64U88D0BY / NT2GT64U8HD0BY 512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64 Unbuffered DDR2 SDRAM DIMM 240pin Unbuffered DDR2 SDRAM MODULE Based on 64Mx16 DDR2 SDRAM D-die 512MB Based on 128Mx8 DDR2 SDRAM D-die (1GB/2GB) Features
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NT512T64UH4D0FY
NT1GT64U88D0BY
NT2GT64U8HD0BY
512MB:
240pin
64Mx16
512MB)
128Mx8
PC2-5300
PC2-6400
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PDF
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128M*8BIT
Abstract: No abstract text available
Text: FEDR36V01G52B-002-01 Issue Date: Nov. 18, 2009 MR36V01G52B 64M–Word x 16–Bit or 128M–Word × 8–Bit Page Mode P2ROM FEATURES PIN CONFIGURATION TOP VIEW 64Mx16 or 128Mx8-bit electrically switchable configuration • Page size of 8-word x 16-Bit or 16-word x 8-Bit
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FEDR36V01G52B-002-01
MR36V01G52B
64Mx16
128Mx8-bit
16-Bit
16-word
56-pin
56-P-1420-0
50-K-MC)
128M*8BIT
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PDF
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|
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1170D28
Abstract: No abstract text available
Text: FEDR26V01G54R-002-03 Issue Date: Oct. 01, 2008 MR26V01G54R 32M–Word x 32–Bit or 64M–Word × 16–Bit Page Mode P2ROM PIN CONFIGURATION TOP VIEW FEATURES 32Mx32 or 64Mx16-bit electrically switchable configuration • Page size of 8-word x 32-Bit or 16-word x 16-Bit
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Original
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FEDR26V01G54R-002-03
MR26V01G54R
32Mx32
64Mx16-bit
32-Bit
16-word
16-Bit
1170D28
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PDF
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IS43TR16640A
Abstract: No abstract text available
Text: IS43/46TR16640A, IS43/46TR16640AL IS43/46TR81280A , IS43/46TR81280AL 128MX8, 64MX16 1Gb DDR3 SDRAM ADVANCED INFORMATION NOVEMBER 2012 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V • Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V •
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Original
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IS43/46TR16640A,
IS43/46TR16640AL
IS43/46TR81280A
IS43/46TR81280AL
128MX8,
64MX16
cycles/64
cycles/32
switch-15GBLA1
IS46TR81280A
IS43TR16640A
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PDF
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49/SG564283FG8NWIL
Abstract: No abstract text available
Text: SG564283FG8NWUU June 16, 2008 Ordering Information Part Numbers Description Module Speed SG564283FG8NWDB 128Mx64 1GB , DDR2, 200-pin SO-DIMM, Unbuffered, Non-ECC, 64Mx16 Based, DDR2-400-333, 30.00mm, 22Ω DQ termination, Green Module (RoHS Compliant). PC2-3200 @ CL 3.0
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Original
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SG564283FG8NWUU
SG564283FG8NWDB
128Mx64
200-pin
64Mx16
DDR2-400-333,
PC2-3200
SG564283FG8NWDG
49/SG564283FG8NWIL
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PDF
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hynix nand 1G
Abstract: hynix nand flash HY27 hynix nand hy27ua hynix 1g flash memory hynix nand spare area 48TSOP hynix nand flash memory
Text: Preliminary HY27UA 08/16 1G1M Series HY27SA(08/16)1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Document Title 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash Memory Revision History No. History Draft Date Remark 0.0 1) Initial Draft Nov. 28. 2003 Preliminary
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Original
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HY27UA
HY27SA
128Mx8bit
64Mx16bit)
hynix nand 1G
hynix nand flash
HY27
hynix nand hy27ua
hynix 1g flash memory
hynix nand spare area
48TSOP
hynix nand flash memory
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PDF
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VCCQ15
Abstract: No abstract text available
Text: White Electronic Designs W3E64M16S-XSBX PRELIMINARY* 64Mx16 DDR SDRAM FEATURES BENEFITS DDR SDRAM rate = 200, 250, 266, 333* Package: • 60 Plastic Ball Grid Array PBGA , 10 x 12.5mm 1Gb upgrade to 512Mb 60 FBGA SDRAM 2.5V ±0.2V core power supply
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64Mx16
512Mb
W3E64M16S-XSBX
VCCQ15
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PDF
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HY27US081G1M
Abstract: hynix NAND ECC hynix nand spare area 48pin-TSOP1 HY27US161G1M hynix naming hynix nand reset nand flash HYNIX Hynix Nand flash code Hynix E NAND
Text: Preliminary HY27US 08/16 1G1M Series 1Gbit (128Mx8bit / 64Mx16bit) NAND Flash 1Gb NAND FLASH HY27US081G1M HY27US161G1M This document is a general product description and is subject to change without notice. Hynix does not assume any responsibility for use of circuits described. No patent licenses are implied.
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Original
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HY27US
128Mx8bit
64Mx16bit)
HY27US081G1M
HY27US161G1M
HY27US081G1M
hynix NAND ECC
hynix nand spare area
48pin-TSOP1
HY27US161G1M
hynix naming
hynix nand
reset nand flash HYNIX
Hynix Nand flash code
Hynix E NAND
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PDF
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NT1GT64UH8D0FN-AD
Abstract: 64mx16 NT1GT64UH8D0FN-3C PC2-5300 64MX16 DDR2 PC2-6400
Text: NT512T64UH4D0FN / NT1GT64UH8D0FN / NT2GT64U8HD0BN NT512T64UH4D0FS / NT1GT64UH8D0FS / NT2GT64U8HD0BS 512MB: 64M x 64 / 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Based on DDR2-533/667/800 64Mx16 512MB /64Mx16 (1GB)/128Mx8 (2GB) SDRAM D-Die
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NT512T64UH4D0FN
NT1GT64UH8D0FN
NT2GT64U8HD0BN
NT512T64UH4D0FS
NT1GT64UH8D0FS
NT2GT64U8HD0BS
512MB:
PC2-4200
PC2-5300
PC2-6400
NT1GT64UH8D0FN-AD
64mx16
NT1GT64UH8D0FN-3C
64MX16 DDR2
PC2-6400
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PDF
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SODIMM DDR2 Mechanical Dimensions
Abstract: PC2-6400 PC2-5300 SSTL-18 NT2GT64U8HC0BN
Text: NT1GT64UH8C0FN / NT2GT64U8HC0BN 1GB: 128M x 64 / 2GB: 256M x 64 PC2-4200 / PC2-5300 / PC2-6400 Unbuffered DDR2 SO-DIMM Preliminary Edition Based on DDR2-533/667/800 64Mx16 1GB /128Mx8 (2GB) SDRAM C-Die Features • Performance: PC2-4200 PC2-5300 PC2-6400
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Original
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NT1GT64UH8C0FN
NT2GT64U8HC0BN
PC2-4200
PC2-5300
PC2-6400
DDR2-533/667/800
64Mx16
/128Mx8
PC2-4200
PC2-5300
SODIMM DDR2 Mechanical Dimensions
PC2-6400
SSTL-18
NT2GT64U8HC0BN
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PDF
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IS43TR16640A
Abstract: IS43TR81280A DDR31866K 64MX16 bc 888
Text: IS43/46TR16640A/AL, IS43/46TR81280A/AL 128Mx8, 64Mx16 1Gb DDR3 SDRAM ADVANCED INFORMATION DECEMBER 2011 FEATURES • Standard Voltage: VDD and VDDQ = 1.5V ± 0.075V Low Voltage L : VDD and VDDQ = 1.35V + 0.1V, -0.067V
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Original
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IS43/46TR16640A/AL,
IS43/46TR81280A/AL
128Mx8,
64Mx16
cycles/64
cycles/32
78-ball
IS43TR16640A
IS43TR81280A
DDR31866K
bc 888
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PDF
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Untitled
Abstract: No abstract text available
Text: 172PIN DDR2 533 Micro-DIMM 1024MB With 64Mx16 CL4 TS1GPA1024U5 Description Placement The TS1GPA1024U5 is a 128M x 64bits DDR2-533 Micro-DIMM. The TS1GPA1024U5 consists of 8pcs 64Mx16bits DDR2 SDRAMs in 92 ball FBGA packages and a 2048 bits serial EEPROM on a 172-pin printed
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172PIN
1024MB
64Mx16
TS1GPA1024U5
TS1GPA1024U5
64bits
DDR2-533
64Mx16bits
172-pin
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PDF
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