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5STP18H4200 Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 mΩ Ω Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Sep. 01 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	18H4200 5SYA1046-02 18H4200 18H4000 18H3600 CH-5600 5STP18H4200	PDF
Untitled Abstract: No abstract text available Text: VDSM = 4200 V ITAVM = 2075 A ITRMS = 3260 A ITSM = 32000 A VT0 = 0.96 V rT = 0.285 mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Aug.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	18H4200 5SYA1046-02 18H4200 18H4000 18H3600 67xVDRM CH-5600	PDF
5stp18h4200 Abstract: 18H3600 Text: Key Parameters VDSM = 4200 ITAVM = 2075 ITRMS = 3260 ITSM = 32000 VT0 = 0.96 rT = 0.285 V A A A V mΩ Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA 1046-01 April, 98 Features • Patented free-floating silicon technology • Low on-state and switching losses	Original	18H4200 18H4200 18H4000 18H3600 67xVDRM CH-5600 5stp18h4200	PDF
Untitled Abstract: No abstract text available Text: VDSM ITAVM ITRMS ITSM VT0 rT = = = = = = 4200 V 2075 A 3260 A 32000 A 0.96 V 0.285 mΩ Ω Phase Control Thyristor 5STP 18H4200 Doc. No. 5SYA1046-02 Jan. 02 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications	Original	18H4200 5SYA1046-02 18H4200 18H4000 18H3600 CH-5600	PDF