NE32584C-T1

Abstract: nec 3435 transistor am 4428
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32584C C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS Unit: mm T h e N E 3 25 84C is a H etero Jun ction F ET th a t utilizes the hetero ju n ctio n to crea te high m obility e lectron s.

NEC 12 F

Abstract: F7805 D780308 D78030 sony KsS - 313
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT PD78052Y, 78053Y, 78054Y, 78055Y, 78056Y, 78058Y 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The /¿PD78052Y, 78053Y, 78054Y, 78055Y, 78056Y, and 78058Y versions add the l2C bus control function to the /¿PD78052, 78053, 78054, 78055, 78056, and 78058, and are suitable for application in AV products.

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿iPG138GV L-BAND SPDT SWITCH DESCRIPTION The //PG 138G V is L-Band SPDT Single Pole Double Throw GaAs FET switch which was developed for digital mobile communication system. It housed in an very small 8-pin SSOP that is smaller than usual 8-pin SOP and easy to install and contributes to

NEC 3536

Contextual Info: DATA SHEET GaAs MES FET NE76118 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET DESCRIPTION NE76118 is a n-channel GaAs MES FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES • Low noise figure NF = 0.8 dB TYP. at f = 2 GHz •

NEC Electronics uPD Series

Abstract: nec 100 pin d780805
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT jUPD78070AY 8-BIT SINGLE-CHIP MICROCONTROLLER DESCRIPTION The ¿¿PD78070AYis a limited-function product from which the on-chip ROM of the /iPD78078Y Subseries has been removed. Through interchangeable external ROM, program maintenance can be performed easily. Besides a high­

IC3208

Abstract: P12315EJ2V0DS00
Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿tPG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the

Contextual Info: PRELIMINARY DATA SHEET NEC / MOS INTEGRATED CIRCUIT MC-454BA8C 4M-WORD BY 80-BIT SYNCHRONOUS DYNAMIC RAM MODULE BUFFERED TYPE Description The MC-454BA80 is a 4,194,304 words by 80 bits synchronous dynamic RAM module on which 20 pieces of 16 M SDRAM : ¿¿PD4516421 are assembled.

sot70

Abstract: B448 sot-70
Contextual Info: Philips Semiconductors Leadform options Power Thyristors and Triacs LEADFORM OPTIONS • These options require a special part number before ordering. • Contact your local Philips Semiconductors representative for pricing, minimum order quantities and part number.

uPG508

Abstract: upg508b
Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG508B 13 GHz DIVIDE-BY-4 PRESCALER DESCRIPTION //PG508B is a GaAs divide-by-4 prescaler capable of operating up to 13 GHz. It is designed as the prescaler in the frequency synthesizers of microwave applications systems and measurement equipment.

1J43

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FIELD EFFECT TRANSISTOR NEM0899F06-30 N-CHANNEL SILICON POWER MOSFET FOR UHF-TV TRANSMITTER POWER AMPLIFIER FEATURES PACKAGE DRAWING Unit: mm High output, high gain, high efficiency jjd x 2, • Wide band operation (f = 470 to 860 MHz)

Contextual Info: DATA SHEET_ BIPOLAR ANALOG INTEGRATED CIRCUIT juPC8110GR 1 GHz DIRECT QUADRATURE MODULATOR FOR DIGITAL MOBILE COMMUNICATION D ES C R IP TIO N The //PC8110GR is a sillicon monolithic integrated circuit designed as 1 GHz direct quadrature modulator for

Contextual Info: DATA SHEET GaAs INTEGRATED CIRCUIT //PG503B 9 GHz DIVIDE-BY-4 PRESCALER DESCRIPTION The //PG503B is a GaAs divide-by-4 prescaler capable of operating up to 9 GHz. It is intend to be used in the frequency synthesizers of microwave application systems and measurement

P1239

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT ¿ÎPG171GV 1.9 GHz-BAND POWER AMPLIFIER FOR PHS DESCRIPTION The /¿PG171GV is a 2 stages GaAs FET power amplifier which was developed for PHS Personal Handy Phone System application. The device can operate with 3.0 V at 1.9 GHz-band, having the high efficiency and low

MC-454AC724

Abstract: MC-454AC724F-A10 MC-454AC724F-A67 MC-454AD644-A10 MC-454AD644-A12 MC-454AD644-A67 PD4516 PD4516821
Contextual Info: PRELIMINARY DATA SHEET_ NEC MOS INTEGRATED CIRCUIT MC-454AC724 4M-WORD BY 72-BIT SYNCHRONOUS DYNAMIC RAM MODULE UNBUFFERED TYPE Description The MC-454AC724 is a 4,194,304 words by 72 bits synchronous dynamic RAM module on which 18 pieces of 16 M

101p1

Abstract: IC-3144
Contextual Info: DATA SHEET_ GaAs INTEGRATED CIRCUIT juPGIOOP, juPG101P WIDE BAND AMPLIFIER CHIPS DESCRIPTION ¿¿PG100P and ^PG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. ¿¿PG100P is low noise amplifier from 50 MHz to 3 GHz and ¿xPG101P is a medium power amplifier in the same

Contextual Info: PRELIMINARY DATA SHEET GaAs MES FET NES2527B-30 30 W S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The PACKAGE DIMENSIONS UNIT: mm NES2527B-30 is power GaAs FET which provides high output power and high gain in the 2.5 - 2.7 GHz band. Internal

NEC Ga FET marking L

Abstract: U/25/20/TN26/15/850/NE32984D
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE32984D X to Ka BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE32984D is a Hetero Junction FET that utilizes the hetero junction to create high mobility electrons. Unit: mm

mmic marking c1b

Contextual Info: PRELIMINARY DATA SHEET BIPOLAR ANALOG INTEGRATED CIRCUITS uPC2791TB, uPC2792TB 5 V, SUPER MINIMOLD SILICON MMIC VHF-UHF WIDEBAND AMPLIFIER DESCRIPTION The ¿iPC2791TB and ¿iPC2792TB are silicon monolithic integrated circuits designed as 2nd IF buffer amplifier for

d480

Abstract: DS04-28501-2E LE128 MB40168 MB40178 QFP-44 R2R Ladder Resistor Network Fujitsu dac 02 18 pin
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28501-2E ASSP Single Chip 8-Bit A/D and 9-Bit D/A Converter MB40168/MB40178 • DESCRIPTION The Fujitsu MB40168 and MB40178 are high speed, low power single chip A/D and D/A converters designed for video processing applications. The A/D converter has a resolution of 8 bits while the D/A converter has 9bit resolution. They are fabricated in Fujitsu’s advanced bipolar technology, and housed in a 48-pin plastic shrink

063 793

Abstract: transistor v63
Contextual Info: DATA SHEET HJ-FET NE34018 L to S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION NE34018 is a n-channel HJ-FET housed in MOLD package. PACKAGE DIMENSIONS in millimeters FEATURES 2.1 ± 0.2 Low noise figure 1.25 ±0.1 NF = 0.6 dB TYP. at f = 2 GHz High associated gain

Contextual Info: PRELIMINARY PRODUCT INFORMATION GaAs MES FET NEZ1011-8E 8 W Ku-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION PACKAGE DIMENSIONS UNIT: mm T h e N E Z 1 0 1 1 -8 E is p o w e r G aA s F ET w hich p ro vid e s high gain, high e fficie n cy and high o u tp u t po w e r in K u-band.

UG501

Contextual Info: DATA SHEET_ NEC GaAs INTEGRATED CIRCUIT //PG501B 5 GHz DIVIDE-BY-2 STATIC PRESCALER DESCRIPTION The //PG501B is a divide-by-4 prescaler capable of operating up to 5 GHz. It is intend to be used in the frequency synthesizers of microwave application systems and measurement

Contextual Info: _ DATA SHEET_ OCMOS FET PS7113-1A, -2A, PS7113L-1 A, -2A 6, 8 PIN DIP OCMOS FET 1-ch, 2-ch OCMOS FET DESCRIPTION T h e P S 7113-1A , -2 A and P S 7 113 L-1 A , -2A are solid state relays co n tain ing G a A s LED s on the light em ittin g side

HA2080

Abstract: ci LA 7804 ON NEC Electronics uPD Series 7804 inverter D78044 D78005
Contextual Info: DATA SHEET MOS INTEGRATED CIRCUIT ¿¿PD7 8 0 7 6 Y , 7 8 0 7 8 Y 8-BIT SINGLE-CHIP MICROCONTROLLERS DESCRIPTION The ¿¿PD78076Y and 7 8 0 7 8 Y add the l2C bus co n tro l fu n ctio n to the /¿PD78076 and 78078, and are su itab le for a pplica tio n in AV products.