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    IC3208

    Abstract: P12315EJ2V0DS00
    Text: DATA SHEET GaAs INTEGRATED CIRCUIT ¿iPG105B-1 S-BAND LOW NOISE AMPLIFIER DESCRIPTION The ¿tPG105B-1 GaAs Am plifier has a very low noise characteristics in the S-band. This device has 3 stages FET amplifiers to achieve high linear gain. This amplifier is ideal for microwave communication system and the


    OCR Scan     		uPG105B-1 tPG105B-1 /xPG105B-1 IC3208 P12315EJ2V0DS00 PDF