199FI Search Results

SC-65

Contextual Info: 22307^5 0QD4177 3b5 m S P E C 1F 1C A T I O N DEVICE NAME : TYPE NAME : SPEC. No. : 1G B T 1 M B 2 0 - 0 6 0 M S 5 F 3 5 2 2 Jun.-25-199fi F u j i DATE E l e c t r i c Co., Ltd. This Specification is subject to change without noti ce. NAM E APPROVED DRAWN

F3525

Abstract: D4270 FUJI IGBT
Contextual Info: SPEC I F I CATION DEVICE NAME :_I G B T IYPE NAME :_1 M B C 0 3 - 1 ? 1 SgEC- No._ ;_M S 5 F 3 5 2 5 PATE_ :_ Jun. -25-199fi F uj i Juh CHECKED - 3 $ NAME -'% APPROVED F u ji E le c tr ic Cc4_t<± (T. '[«fc-AOUfcll V

3VXD4

Abstract: DDQS 5-pin BD 7954 bd 4914 16C256 Er1003P trident vga fd1004 341S KDS1
Contextual Info: MINI AAVCC L\D POWER JACK/OUT J1004 O -✓Vo - c=H- 4 S 3 2 15 A I 3 r r C O N ! ^ H E C 3 6 00 1 - SA C40 F 0. lu 0603£ C44 0 .0 1 U 0603B CND_CHASSIS CND_CJ i A S S I S R1002 - A W - AC N D _ _ T V CONNECT C 100 2 lOU R1012 1 OK 0 603B _ -r«. C ; O 0 5

charger NiMh 4 ch

Abstract: clock ic dip pack bq20xx soic 28 lead acid battery charger module gas gauge "lead acid" BQ2002* NiMH charger application note bq4013 BQ4025
Contextual Info: Nonvolatile SRAM s Benchmarq’s nonvolatile static random-access memories NVSRAMs integrate—in a single-DIP package—extremely low standby power SRAM, nonvolatile control circuitry, and a long-life lithium cell. The NVSRAMs combine secure nonvolatility (more than 10 years in the

Contextual Info: STI322000 72-PIN SIMMS 2M X 32 DRAM SIMM Memory Module FEATURES GENERAL DESCRIPTION • The Simple Technology STI322000 is a 2M bits ;< 32 Dynamic RAM high density memory module. The Simple Technology STI322000 consist of sixteen CMOS 1M x 4 DRAMs in 20-pin

709 series K Allen-Bradley Starter

Abstract: Allen-Bradley auxiliary contact 595-A Allen-Bradley starter 709 A2JD Allen-Bradley auxiliary contact 595-AB westinghouse contactor 195-FA11 interposing relay 196-fta smp1 OVERLOAD RELAY
Contextual Info: Bulletin 509 NEMA Full Voltage Starters Bulletin 509 D Broad Range of NEMA Sizes 00–9 D Exceptional Electrical Life D UL Certified Type 2 Coordination D Dependable Coil Operation D Cost Saving Design D SMP–1 or SMP–3 Solid-State Overload Relays

Contextual Info: STI642006UD1 -1OVG 168-PIN DIMMS 2M X 64 Bits SDRAM Unbuffered DIMM FEATURES GENERAL DESCRIPTION • • • The Simple Technology STI642006UD1-10VG is a 2M x 64 bits Synchronous Dynamic RAM SDRAM Dual In-line Memory Module (DIMM). TheSimpleTechnologySTI642C06UD1-10VG

Contextual Info: TMS417800A 2097152 BY 8-BIT DYNAMIC RANDOM-ACCESS MEMORY S M K S 8 88 8 - A U G U S T 1996 - R E V IS E D S E P T E M B E R 19 97 This data sheet is applicable to all TMS417800As symbolized by Revision "E" and subsequent revisions as described in the device symbolization section.

74LVC374A

Abstract: 74LVC374AD 74LVC374ADB 74LVC374APW 74LVCH374A 74LVCH374AD 74LVCH374ADB 74LVCH374APW LVCH374A
Contextual Info: Philips Semiconductors Product specification Octal D-type flip-flop with 5-volt tolerant inputs/outputs; positive edge-trigger; 3-State FEATURES 74LVC374A 74LVCH374A Inputs can be driven from either 3.3V or 5V devices, in 3-State operation, outputs can handle 5V. This feature allows the use of