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    charger NiMh 4 ch

    Abstract: clock ic dip pack bq20xx soic 28 lead acid battery charger module gas gauge "lead acid" BQ2002* NiMH charger application note bq4013 BQ4025
    Text: Nonvolatile SRAM s Benchmarq’s nonvolatile static random-access memories NVSRAMs integrate—in a single-DIP package—extremely low standby power SRAM, nonvolatile control circuitry, and a long-life lithium cell. The NVSRAMs combine secure nonvolatility (more than 10 years in the


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    PDF bq40l0 bq40lI bq4013 bq40I4 bq4024 bq4015 bq4025 bq4115 bq40l6 bq4017 charger NiMh 4 ch clock ic dip pack bq20xx soic 28 lead acid battery charger module gas gauge "lead acid" BQ2002* NiMH charger application note

    Q4010

    Abstract: No abstract text available
    Text: bq4010/bq401 OY BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


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    PDF bq4010/bq401 bq4010 536-bit bq4010/bq4010Y q4010