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    BQ4010 Price and Stock

    Rochester Electronics LLC BQ4010MA-70

    IC NVSRAM 64KBIT PARALLEL 28DIP
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    DigiKey BQ4010MA-70 Tube 3,046 18
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    Rochester Electronics LLC BQ4010MA-200

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010MA-200 Tube 2,342 18
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    BQ4010MA-200 Tube 1,629 18
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    Rochester Electronics LLC BQ4010YMA-70N

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-70N Tube 2,059 23
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    • 100 $13.18
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    Rochester Electronics LLC BQ4010YMA-200

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-200 Tube 1,534 18
    • 1 -
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    • 100 $17.57
    • 1000 $17.57
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    Rochester Electronics LLC BQ4010YMA-85N

    IC NVSRAM 64KBIT PARALLEL 28DIP
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey BQ4010YMA-85N Tube 202 18
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    Find more BQ4010 price and stock on Findchips.com

    BQ4010 Datasheets (64)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    bq4010 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010 Texas Instruments 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V) Original PDF
    BQ4010 Benchmarq 8Kx8 Nonvolatile SRAM Scan PDF
    BQ4010-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010-200 Benchmarq nvSRAM Original PDF
    BQ4010-70 Benchmarq nvSRAM Original PDF
    BQ4010-85 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010ly Texas Instruments 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V) Original PDF
    BQ4010LYEBZ-70N Texas Instruments BQ4010 - IC 8K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA28, DIP-28, Static RAM Original PDF
    BQ4010LYMA-70 Texas Instruments BQ4010LY - Texas Instruments BQ4010LYMA-70 Original PDF
    BQ4010LYMA-70N Texas Instruments 8Kx8 Nonvolatile SRAM, 3.3-V Input, 10% Voltage Tolerance 28-DIP MODULE -40 to 85 Original PDF
    bq4010MA-150 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    BQ4010MA-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010MA-150 Texas Instruments 8Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4010MA-150 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010MA-150N Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    bq4010MA-200 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    bq4010MA-200 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010MA-200 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010MA-200 Texas Instruments 8Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF

    BQ4010 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    bq4010

    Abstract: bq4010LY bq4010Y DIP-28
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED APRIL 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 34-Pin bq401BATCAP 536-bit bq4010 bq4010LY bq4010Y DIP-28

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N

    bq4010

    Abstract: bq4010MA bq4010Y bq4010YMA
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010MA bq4010Y bq4010YMA

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    BQ4010YMA-150N

    Abstract: bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y BQ4010YMA-150
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit BQ4010YMA-150N bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y BQ4010YMA-150

    BQ4010YMA-150N

    Abstract: BQ4010YMA-200
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit BQ4010YMA-150N BQ4010YMA-200

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns

    Untitled

    Abstract: No abstract text available
    Text: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. bq4010

    Untitled

    Abstract: No abstract text available
    Text: BENCHHARÛ MICROELEC bflE D • 137afln 0Q01S11 TTS H B E N bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >■ D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral


    OCR Scan     		PDF 137afln 0Q01S11 bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N.

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit lithi50N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010 bq401

    M48128Y

    Abstract: ds1245y DS1225Y
    Text: De usili • - S i1 ! i : i ; : í ; í ! u c í í : n 31 fVlb ro e :e o h i ■¡î i c ■. ;î.f i .1 o - DS1225AB M48Z08 DS1225AD M48Z18 bq4010Y M48Z58 bq4010/4823Y M48Z58Y bq4010Y bq4010


    OCR Scan     		PDF bq4010 bq4010Y bq4010/4823Y bq4011 bq4011Y/4833Y bq4013 bq4013Y bq4014 DS1225AB M48128Y ds1245y DS1225Y

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin bq4010YMA-85N -150N. bq4010

    Untitled

    Abstract: No abstract text available
    Text: bq401 Q/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• D ata retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq401 Q/bq4010Y bq4011 144-bit 28-pin 10-year

    Untitled

    Abstract: No abstract text available
    Text: b q 4 0 1 0 /b q 4 0 1 0 Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010 536-bit 28-pin 10-year toleran70 bq4010Y-70 bq4010YMA-70N 1991B. bq4010

    bq4010Y-xxxN

    Abstract: No abstract text available
    Text: bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		PDF bq4010/bq4010Y bq4010 536-bit bq4010YMA-85N -150N. bq4010-70 bq4010Y-70 bq4010YMA-70N bq4010Y-xxxN