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    BQ401 Price and Stock

    Rochester Electronics LLC BQ4010MA-70

    IC NVSRAM 64KBIT PARALLEL 28DIP
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    DigiKey BQ4010MA-70 Tube 18
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    Texas Instruments BQ4010MA-70

    IC NVSRAM 64KBIT PARALLEL 28DIP
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    Rochester Electronics BQ4010MA-70 3,046 1
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    Rochester Electronics LLC BQ4013MA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    DigiKey BQ4013MA-85 Tube 11
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    Texas Instruments BQ4013MA-85

    IC NVSRAM 1MBIT PAR 32DIP MODULE
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    Rochester Electronics BQ4013MA-85 743 1
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    Texas Instruments BQ4015MA-85

    IC NVSRAM 4MBIT PAR 32DIP MODULE
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    DigiKey BQ4015MA-85 Tube 12
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    Find more BQ401 price and stock on Findchips.com

    BQ401 Datasheets (390)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    bq4010 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010 Texas Instruments 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V) Original PDF
    BQ4010 Benchmarq 8Kx8 Nonvolatile SRAM Scan PDF
    BQ4010-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010-200 Benchmarq nvSRAM Original PDF
    BQ4010-70 Benchmarq nvSRAM Original PDF
    BQ4010-85 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010ly Texas Instruments 8 k x 8 NONVOLATILE SRAM (5 V, 3.3 V) Original PDF
    BQ4010LYEBZ-70N Texas Instruments BQ4010 - IC 8K X 8 NON-VOLATILE SRAM MODULE, 70 ns, DMA28, DIP-28, Static RAM Original PDF
    BQ4010LYMA-70 Texas Instruments BQ4010LY - Texas Instruments BQ4010LYMA-70 Original PDF
    BQ4010LYMA-70N Texas Instruments 8Kx8 Nonvolatile SRAM, 3.3-V Input, 10% Voltage Tolerance 28-DIP MODULE -40 to 85 Original PDF
    bq4010MA-150 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    BQ4010MA-150 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010MA-150 Texas Instruments 8Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    bq4010MA-150 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010MA-150N Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    bq4010MA-200 Texas Instruments 8k x 8 Nonvolatile SRAM Original PDF
    bq4010MA-200 Texas Instruments NVRAM, NVSRAM, Parallel, 5V Supply Voltage, 28-DIP Module Original PDF
    BQ4010MA-200 Texas Instruments 8Kx8 Nonvolatile SRAM Original PDF
    BQ4010MA-200 Texas Instruments 8Kx8 Nonvolatile SRAM, 5% Voltage Tolerance 28-DIP MODULE 0 to 70 Original PDF
    ...

    BQ401 Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit PDF

    UNITRODE

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles


    Original     		bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y 28-pin 10-year bq4010 536-bit PDF

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		bq4013/Y/LY SLUS121A 32-Pin 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy


    Original     		bq4014/bq4014Y 256Kx8 bq4014 152-bit 32-pin 10-year PDF

    bq4014

    Abstract: BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy


    Original     		bq4014/bq4014Y 256Kx8 bq4014 152-bit 32-pin 10-year BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85 PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4010/Y/LY SLUS116A 28-Pin 536-bit PDF

    bq4013MA-120

    Abstract: bq4013Y bq4013YMA-120 bq4013
    Text: bq4013/Y 128Kx8 Nonvolatile SRAM Features General Description ➤ Data retention for at least 10 years without power The CMOS bq4013/Y is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The integral control circuitry and lithium energy


    Original     		bq4013/Y 128Kx8 576-bit 32-pin bq4013MA-120 bq4013Y bq4013YMA-120 bq4013 PDF

    bq4011

    Abstract: BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin BQ4011MA-100 bq4011Y bq4011YMA-150N bq4011YMA-70N benchmarq BQ4011YMA-70 PDF

    bq4010

    Abstract: bq4010Y bq4010YMA-85N
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010Y bq4010YMA-85N PDF

    Untitled

    Abstract: No abstract text available
    Text: Not Recommended For New Designs bq4013/Y/LY www.ti.com SLUS121A – MAY 1999 – REVISED MAY 2007 128 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		bq4013/Y/LY SLUS121A 32-Pin 576-bit PDF

    Untitled

    Abstract: No abstract text available
    Text: OJ bq4014/bq4014Y UNITRODE- 256Kx8 Nonvolatile SRAM Features > Data retention in the absence of power > Automatic write-protection dur­ ing power-up/power-down cycles >• Industry-standard 32-pin 256K x 8 pinout >• Conventional SEAM operation; unlimited write cycles


    OCR Scan     		bq4014/bq4014Y 256Kx8 bq4014 152-bit 256Kx PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq401 OY UNITRODE- 8Kx8 Nonvolatile SRAM Features General Description > D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq401 bq4010 536-bit bq4010YMA-70N bq4010-70 bq4010/bq4010Y bq401Q 150ns 200ns PDF

    Untitled

    Abstract: No abstract text available
    Text: h bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description ► Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. bq4010 PDF

    Untitled

    Abstract: No abstract text available
    Text: BENCHMARQ_ bq4015/bq4015Y 512Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power >- Automatic write-protection during power-up/power-down cycles >• Industry-standard 32-pin 512K x 8 pinout >- Conventional SRAM operation;


    OCR Scan     		bq4015/bq4015Y 512Kx8 32-pin bq4015 304-bit bq4015 PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4013/bq4013Y BENCHMARQ 128Kx8 Nonvolatile SRAM Features General Description > Data retention in the absence of power The CMOS bq4013 is a nonvolatile 1,048,576-bit static RAM organized as 131,072 words by 8 bits. The in teg ral control circuitry and lithium energy source provide reli­


    OCR Scan     		bq4013/bq4013Y 128Kx8 bq4013 576-bit 32-pin 10-year PDF

    Untitled

    Abstract: No abstract text available
    Text: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium


    OCR Scan     		bq4017/bq4017Y 2048Kx8 bq4017 216-bit bq4017 2048K PDF

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y BENCHMARQ 32Kx8 Nonvolatile SRAM Features General Description >• Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy


    OCR Scan     		bq4011/bq4011Y 32Kx8 bq4011 144-bit 28-pin 10-year bq4011YMA-150N bq4011 PDF

    Untitled

    Abstract: No abstract text available
    Text: BENCHHARÛ MICROELEC bflE D • 137afln 0Q01S11 TTS H B E N bq4010/bq4010Y BENCHMARQ 8Kx8 Nonvolatile SRAM Features General Description >■ D ata retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral


    OCR Scan     		137afln 0Q01S11 bq4010/bq4010Y bq4010 536-bit 28-pin 10-year bq4010YMA-85N -150N. PDF

    Untitled

    Abstract: No abstract text available
    Text: Advance Information Addendum b BENCHMARQ _ bq4011H/bq4011HY High-Speed 32Kx8 Nonvolatile SRAM Features General Description >• Acces^cycle tim es of 20 and 25 ns The CMOS bq4011H is a nonvolatile 2 6 2 ,1 4 4 -b it fa s t s ta tic RAM organized as 32,768 words by 8 bits.


    OCR Scan     		bq4011H/bq4011HY 32Kx8 bq4011H 28-pin BO-41 bq4011H-20 bq4011H-25 bq4011HY PDF