IN6AG

Abstract: 28F020 intel 28F020
Contextual Info: 28F020 2048K 256K x 8 CMOS FLASH MEMORY • Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase ■ Quick-Pulse Programming Algorithm — 10 ¡is Typical Byte-Program — 4 Second Chip-Program ■ 100,000 Erase/Program Cycles ■ 12.0V ± 5 % Vpp

BY324

Contextual Info: ACMCS034 *ACMCS034* AK5362048AWP 2,097,152 Word by 36 Bit CMOS Dynamic Random Access Memory MICROCIRCUIT CORPORATION DESCRIPTION T h e Accutek A K 5 3 6 2 0 4 8 A W P high density m em ory module is a C M O S dynamic RAM organized in 2048K x 36 bit words. The

Contextual Info: in te l 28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 2 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jas Typical Byte-Program — 4 Second Chip-Program 100,000 Erase/Program Cycles 12.0V ± 5 % Vpp High-Performance Read

M28F020-20

Abstract: MD28F020-20/B
Contextual Info: in te l ß o n iy ß iß O A O tfr M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 jus Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum

Contextual Info: P R lO B M A IifR r ¡ n ie l M28F020 2048K 256K x 8 CMOS FLASH MEMORY Flash Electrical Chip-Erase — 5 Second Typical Chip-Erase Quick-Pulse Programming Algorithm — 10 /as Typical Byte-Program — 4 Second Typical Chip-Program 10,000 Erase/Program Cycles Minimum

PS08

Abstract: 100C CYM1471 CYM1481
Contextual Info: fax id: 2006 i , *" : -:V:V:V:V:V:Tÿ:- : i ^ :^ ; ^3»* i ; i M m i : M M :i : i i CYM1471 CYM1481 ^ i i i i i i yy c y p r e s s 1024K x 8 SRAM Module 2048K x 8 SRAM Module Features • High-density 8-/16-megabit SRAM modules • High-speed CMOS SRAMs — Access tim e of 70 ns

Contextual Info: IßTEXAR X R -T 6 166 Codirectional Digital Data Processor FUNCTIONAL BLOCK DIAGRAM GENERAL DESCRIPTION The XR-T6166 is a digital CM O S circuit which performs the interface function betweeh a 64kbit/s data stream and a 2048kbit/s PCM timeslot data channel. When

Contextual Info: ^EDI EDI8G322048C 2048KX32 SRAM Module ELECTRONIC DESIGNS, INC 2048KX32 Static RAM CMOS, High Speed Module Features The EDI8G 322048C is a high speed 64 m egabit Static 2048Kx32 bit CMOS Static RAM m odule organized as 2048K w ords by 32 bits. This Random Access Memory

Contextual Info: DS1252Y PRELIMINARY DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock FEATURES PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 256K x 8 NV SRAM directly replaces volatile static

Contextual Info: Preliminary bq4017/bq4017Y 2048Kx8 Nonvolatile SRAM Features General Description >- Data retention in the absence of power The CMOS bq4017 is a nonvolatile 16,777,216-bit static RAM organized as 2,097,152 words by 8 bits. The inte­ gral control circuitry and lithium

T 9722

Abstract: Diode T 9722 EDI8G322048C
Contextual Info: EDI8G322048C 2048Kx32 SRAM Module 2048Kx32 Static RAM CMOS, High Speed Module Features 2048Kx32 bit CMOS Static Random Access Memory • Access Times: 20, 25, and 35ns • Individual Byte Selects • Fully Static, No Clocks • TTL Compatible I/O High Density Package

Contextual Info: DS1252Y PRELIMINARY DALLAS SEMICONDUCTOR DS1252Y 2048K NV SRAM with Phantom Clock FEATURES PIN ASSIGNMENT • Real time clock keeps track of hundredths of seconds, minutes, hours, days, date of the month, months, and years • 256K x 8 NV SRAM directly replaces volatile static

Contextual Info: EDI8M8256C70/100/120PC ^EDI High Performance 2 Megabit SRAM Module 256Kx8 Static RAM CMOS, Module Features The EDI8M8256C is a 2048K bit CMOS Static RAM module. It is based on eight 32Kx8 Static RAMs in plastic VSOP packages mounted on a multi-layered ceramic

Contextual Info: EDI8M8257C 90/100/120/150 Module The fu tu re . . . today, i ÄDWÄNKgE DIMFÛI^IMIÂTDÛINI 256Kx8 SRAM CMOS, High Speed Module Features The EDI8M8257C is a 2048K 256Kx8 bit High Speed Static RAM module constructed using two EDI88128C (128Kx8) Static RAMs In teadless chip

Contextual Info: LY62L204916A 2048K X 16 BIT LOW POWER CMOS SRAM Rev.1.2 REVISION HISTORY Revision Description Issue Date Rev. 1.0 Initial Issue Nov. 06. 2012 Rev. 1.1 Typo error on page 9, revised as 8mmx10mm. Dec.18. 2012 Rev. 1.2 1. Revise ISB1 on page 4 & IDR on page 8

Contextual Info: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns

32-PIN

Abstract: DS1249AB DS1249AB-100 DS1249AB-70 DS1249Y DS1249Y-100 DS1249Y-70
Contextual Info: DS1249Y/AB 2048k Nonvolatile SRAM www.maxim-ic.com FEATURES PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles Low-power CMOS operation Read and write access times as fast as 70 ns

Contextual Info: DPZ2MS16P □PM Dense-Pac Microsystems, Inc. O 2048K X 16 FLASH MEMORY MODULE PRELIMINARY D ESC RIPTIO N : The DPZ2M S16P is a 32 megabit C M O S FLASH Electrically Erasable and Programmable nonvolatile memory module. The module is built with sixteen 256K x 8 FLASH memory devices

EN39SL160

Abstract: cFeon EN cFeon serial Flash chip 07c0
Contextual Info: EN39SL160H/L EN39SL160H/L 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory With 4Kbytes Uniform Sector, CMOS 1.8 Volt-only FEATURES • - • Single power supply operation - Full voltage range:1.65-1.95 volt for read and write operations. - Ideal for battery-powered applications.

E99151

Abstract: DS1249W DS1249W-100 DS1249W-100IND MDT32
Contextual Info: 19-5633; Rev 11/10 DS1249W 3.3V 2048kb Nonvolatile SRAM www.maxim-ic.com FEATURES • •       PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Unlimited write cycles

EN29LV160CT

Abstract: EN29LV160CB en29lv160c
Contextual Info: EN29LV160C EN29LV160C 16 Megabit 2048K x 8-bit / 1024K x 16-bit Flash Memory Boot Sector Flash Memory, CMOS 3.0 Volt-only FEATURES • 3.0V, single power supply operation - Minimizes system level power requirements • High performance - Access times as fast as 70 ns

Contextual Info: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE 1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)

EDI8M8257C

Abstract: DDD15L
Contextual Info: ELECTRONIC DESIGNS INC S1E D 3230114 W D Ì 00012b2 Ö7T I EL3> EDI8M8257C B«dronlc DM igro Inc.a High Speed Two Megabit SRAM Module Pfôiy1DIMIHIV 256Kx8 Static RAM CMOS;Module Features T - Y é -Z3 -/</ The EDI8M8257C is a 2048K bit CMOS Static RAM 256Kx8 bit CMOS Static

1024K

Contextual Info: Dense-Pac M icrosystem s, Inc. DPS1MS16P 1024K X 16 CMOS SRAM MODULE O DESCRIPTION: The DPS1MS16P is a 16 megabit, low-power static RAM module. The module is comprised o f sixteen 128K X 8 SRAM devices and tw o high-speed decoders. The DPS1MS16P can be user configurable as 1024K X 16 o r as 2048K X 8 bits.