CY62168DV30

Abstract: CY62168DV30LL-55BVI CY62168DV30LL-55BVXI
Contextual Info: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when

Contextual Info: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE 1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)

AN1064

Abstract: CY62168DV30 CY62168DV30LL-55BVI cypress AN1064 sram system guidelines
Contextual Info: CY62168DV30 MoBL ® 16-Mbit 2 M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)

ultra fine pitch BGA

Abstract: CY62168DV30 CY62168DV30LL-55BVI CY62168DV30LL-55BVXI
Contextual Info: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when

Contextual Info: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)

Contextual Info: CY62168DV30 MoBL 16-Mbit 2 M x 8 Static RAM 16-Mbit (2 M × 8) Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V–3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)

Contextual Info: CY62168DV30 MoBL  16-Mbit 2M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fMax (55 ns Speed)

Contextual Info: MoBL CY62168DV30 PRELIMINARY 16M 2048K x 8 Static RAM Features power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW . The input/output pins (I/O0 through I/O7) are placed in a high-impedance state when: deselected Chip Enable 1 (CE1)

CY62168DV30

Abstract: CY62168DV30LL-55BVI
Contextual Info: CY62168DV30 MoBL ® 16-Mbit 2M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA @ f = 1 MHz ❐ Typical active current: 15 mA @ f = fMax (55 ns Speed)

55BVXI

Abstract: CY62168DV30 CY62168DV30L-55BVXI CY62168DV30L-70BVXI CY62168DV30LL-55BVXI
Contextual Info: CY62168DV30 MoBL 16-Mbit 2048K x 8 Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in

Contextual Info: CY62168DV30 MoBL ® 16-Mbit 2 M x 8 MoBL Static RAM Features • Very high speed ❐ 55 ns ■ Wide voltage range ❐ 2.2 V – 3.6 V ■ Ultra-low active power ❐ Typical active current: 2 mA at f = 1 MHz ❐ Typical active current: 15 mA at f = fMax (55 ns Speed)

Contextual Info: CY62168DV30 MoBL 16-Mbit 2048K x 8 MoBL® Static RAM Features addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when deselected Chip Enable 1 (CE1) HIGH or Chip Enable 2 (CE2) LOW. The input/output pins (I/O0 through I/O7) are placed in

cy62168dv30ll55bvi

Abstract: CY62168DV30 CY62168DV30LL-55BVI
Contextual Info: CY62168DV30 MoBL 16-Mbit 2M x 8 MoBL® Static RAM Features reduces power consumption. The device can be put into standby mode reducing power consumption by 90% when addresses are not toggling. The device can be put into standby mode reducing power consumption by more than 99% when

CY62167DV30L-55ZI

Abstract: CY62167DV30
Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed

CY62167DV30LL-70ZXI

Abstract: 2057-01 Z48A BV48
Contextual Info: CY62167DV30 MoBL 16-Mbit 1M x 16 Static RAM Features also has an automatic power-down feature that significantly reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are

CY62167DV30

Abstract: CY62167DV30LL
Contextual Info: CY62167DV30 MoBL 16 MB 1M x 16 Static RAM Features reduces power consumption by 99% when addresses are not toggling. The device can also be put into standby mode when deselected (CE1 HIGH or CE2 LOW or both BHE and BLE are HIGH). The input/output pins (I/O0 through I/O15) are placed