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    19A, 200V, P-CHANNEL POWER MOSFET Search Results

    19A, 200V, P-CHANNEL POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    19A, 200V, P-CHANNEL POWER MOSFET Price and Stock

    SAE Power STD-20

    N-channel 60 V, 0.032 Ohm typ., 24 A Power MOSFET in DPAK package
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com STD-20 292
    • 1 $245.08
    • 10 $126.34
    • 100 $123.81
    • 1000 $123.81
    • 10000 $123.81
    		Buy Now

    onsemi NVTYS9D6P04M8LTWG

    MOSFET – Power, Single, P-Channel, MOSFET – Power, Single, P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NVTYS9D6P04M8LTWG
    • 1 -
    • 10 -
    • 100 -
    • 1000 $1.522
    • 10000 $0.727
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    onsemi NVTYS025P04M8LTWG

    MOSFET – Power, Single, P-Channel, MOSFET - Power, Single, P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NVTYS025P04M8LTWG
    • 1 -
    • 10 -
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    • 10000 $0.406
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    onsemi NVMFWS9D6P04M8LT1G

    MOSFET - Power, Single P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NVMFWS9D6P04M8LT1G
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.54
    		Buy Now

    onsemi NVMFS9D6P04M8LT1G

    MOSFET - Power, Single P-Channel
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com NVMFS9D6P04M8LT1G
    • 1 -
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    • 10000 $0.5028
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    Find more 19A, 200V, P-CHANNEL POWER MOSFET price and stock on Findchips.com

    19A, 200V, P-CHANNEL POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    FRE9260

    Abstract: delta plc 1E14 2E12 FRE9260D FRE9260H FRE9260R 19A, 200V, P-Channel Power MOSFET Rad Hard in Fairchild for MOSFET
    Text: FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRE9260D, FRE9260R, FRE9260H -200V, O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD FRE9260 delta plc 1E14 2E12 FRE9260D FRE9260H FRE9260R 19A, 200V, P-Channel Power MOSFET Rad Hard in Fairchild for MOSFET PDF

    delta plc

    Abstract: 1E14 2E12 FRE9260D FRE9260H FRE9260R
    Text: FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRE9260D, FRE9260R, FRE9260H -200V, O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD delta plc 1E14 2E12 FRE9260D FRE9260H FRE9260R PDF

    KHB019N20P1

    Abstract: KHB019N20F1
    Text: KHB019N20P1/F1 SEMICONDUCTOR N CHANNEL MOS FIELD EFFECT TRANSISTOR TECHNICAL DATA General Description KHB019N20P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original     		KHB019N20P1/F1 KHB019N20P1 KHB019N20P1 KHB019N20F1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original     		KHB019N20P1/F1 PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original     		KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. PDF

    KHB019N20F1

    Abstract: KHB019N20F2 KHB019N20P1
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original     		KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F1 KHB019N20F2 KHB019N20P1 PDF

    KHB019N20F2

    Abstract: KHB019N20F1 KHB019N20P
    Text: SEMICONDUCTOR KHB019N20P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original     		KHB019N20P1/F1/F2 KHB019N20P1 Fig15. Fig16. Fig17. KHB019N20F2 KHB019N20F1 KHB019N20P PDF

    2N7331D

    Abstract: 2E12 2N7331H 2N7331R
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE9260 D, R, H 2N7331D, 2N7331R 2N7331H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 19A, -200V, RDS(on) = 0.210Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		FRE9260 2N7331D, 2N7331R 2N7331H -200V, O-258 100KRAD 300KRAD 1000KRAD 3000KRAD 2N7331D 2E12 2N7331H 2N7331R PDF

    Untitled

    Abstract: No abstract text available
    Text: SEMICONDUCTOR KHB019N20P1/F1 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB019N20P1 A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters


    Original     		KHB019N20P1/F1 KHB019N20P1 PDF

    IRF P CHANNEL MOSFET 200V 20A

    Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
    Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω


    Original     		RF1S9630SM RF1S4N100SM RF1S630SM RF1S70N06SM RF1S70N03SM O-263AB) LC96586 IRF P CHANNEL MOSFET 200V 20A P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252 PDF

    1E14

    Abstract: 2E12 2N7302D 2N7302H 2N7302R 2N7302
    Text: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE260 D, R, H 2N7302D, 2N7302R 2N7302H Radiation Hardened N-Channel Power MOSFETs November 1994 Features Package • 31A, 200V, RDS(on) = 0.080Ω TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts


    Original     		FRE260 2N7302D, 2N7302R 2N7302H O-258 100KRAD 300KRAD 1000KRAD 3000KRAD O-258AA 1E14 2E12 2N7302D 2N7302H 2N7302R 2N7302 PDF

    1E14

    Abstract: 2E12 FRE260D FRE260H FRE260R
    Text: FRE260D, FRE260R, FRE260H 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31A, 200V, RDS on = 0.080Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRE260D, FRE260R, FRE260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD 1E14 2E12 FRE260D FRE260H FRE260R PDF

    star delta plc

    Abstract: delta plc 1E14 2E12 FRE260D FRE260H FRE260R Rad Hard in Fairchild for MOSFET 214 fairchild transistor
    Text: FRE260D, FRE260R, FRE260H 31A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31A, 200V, RDS on = 0.080Ω TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current


    Original     		FRE260D, FRE260R, FRE260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD star delta plc delta plc 1E14 2E12 FRE260D FRE260H FRE260R Rad Hard in Fairchild for MOSFET 214 fairchild transistor PDF

    10lbxin

    Abstract: classd audio amplifier
    Text: PD - 96909 IRFB4103PbF DIGITAL AUDIO MOSFET Features • Key parameters optimized for Class-D audio amplifier applications • Low RDSON for improved efficiency • Low QG and QSW for better THD and improved efficiency • Low QRR for better THD and lower EMI


    Original     		IRFB4103PbF O-220AB O-220AB 10lbxin classd audio amplifier PDF

    FRE9260

    Abstract: 100KRAD
    Text: CK h U ü a r r is ••«'coKouco- FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs june 1998 Package Features • 19A, -200V, RDS on) = 0.210il TO-25BAA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRE9260D, FRE9260R, FRE9260H -200V, O-25BAA 210il 100KRAD 300KRAD 1000KRAD FRE9260 PDF

    Untitled

    Abstract: No abstract text available
    Text: yw us FRE9260D, FRE9260R, FRE9260H 19A, -200V, 0.210 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 19A, -200V, RDS on = 0.210£1 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(SI)


    OCR Scan     		FRE9260D, FRE9260R, FRE9260H -200V, O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS 2N7331D, 2N7331R S E M I C O N D U C T O R PRELIMINARY REGISTRATION PENDING Currently Available as FRE9260 D, R, H . x. . . Radiation Hardened P-Channel Power MOSFETs January 1993 Package Features • 19A.-200V, RDS(on) = 0.21 Oil TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		2N7331D, 2N7331R FRE9260 O-258 -200V, 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: 4305271 GG53b4G 7H2 H H A S fS5 h a r r i s UU 2N7331D, 2N7331R S E M I C O N D U C T O R 2 REGISTRATION PENDING Currently Available as FRE9260 D, R, H N 7 3 3 1 H . Radiation Hardened N-Channel Power MOSFETs A pril 1994 Package Features • 19A, -200V, RDS(on) = 0.210Q


    OCR Scan     		GG53b4G 2N7331D, 2N7331R FRE9260 -200V, O-258 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: ì li h a r r is U U I S E M IC O N D U C T O R FRE260D, FRE260R, FFÌE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features • 31 A, 200V, RDS on = 0.0800 TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		FRE260D, FRE260R, E260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEfllCOND S E C T O R CSÎ h a f r f r is U U bSE T> m 4302271 OGNIDbb D O 6] H H A S 2N7302D, 2N7302R S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE260 D, R, H juneigg3 Features . Radiation Hardened N-Channel Power MOSFETs


    OCR Scan     		2N7302D, 2N7302R FRE260 O-258 100KRAD 300KRAD 1000KRAD 3000KRAD O-258AA PDF

    Untitled

    Abstract: No abstract text available
    Text: y*Rg*s FRE260D, FRE260R, FRE260H 31 A, 200V, 0.080 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 31 A, 200V, RDS on = 0.080£i TO-258AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)


    OCR Scan     		FRE260D, FRE260R, FRE260H O-258AA 100KRAD 300KRAD 1000KRAD 3000KRAD O-258AA PDF

    Untitled

    Abstract: No abstract text available
    Text: H a rris 2N7331D, 2N7331R 21^733 1H S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRE9260 D, R, H November 1994 R a d iatio n H ard en e d N -C h a n n e l P o w er M O S FE Ts Package Features • 19A, -200V, RDS(on) = 0.21Oft TO-258


    OCR Scan     		2N7331D, 2N7331R FRE9260 O-258 -200V, 21Oft 100KRAD 300KRAD 1000KRAD 3000KRAD PDF

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 4.4 1.0 5.45 5.45 0.6 If Q w . . 500V ' V ' rDS ON (M A X ). . 0.50Í2


    OCR Scan     		FK18SM-10 150ns PDF

    FK18SM-12

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FK18SM-12 HIGH-SPEED SWITCHING USE FK18SM-12 OUTLINE DRAWING Dimensions in mm 4.5 15.9MAX. 1.5 T O <t>3.2 5.45 0.6 4 Q w r V d s s .60 0 V rDS ON (MAX). 0.54Î2


    OCR Scan     		FK18SM-12 150ns FK18SM-12 PDF