Untitled
Abstract: No abstract text available
Text: CMKD3003DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD3003DO contains two 2 Isolated Opposing Silicon Switching Diodes, manufactured by the epitaxial planar process,
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CMKD3003DO
OT-363
100mA
200mA
300mA
19-September
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CPD15
Abstract: mesa die
Text: PROCESS CPD15 Central Ultra Fast Rectifier TM Semiconductor Corp. 500mA Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 25 x 25 MILS Die Thickness 9.5 MILS Anode Bonding Pad Area 14.5 x 14.5 MILS Top Side Metalization
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CPD15
500mA
CBRHDU-02
19-September
CPD15
mesa die
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1N5806
Abstract: UES1101 mesa die 1N5802 CMR3U-01 CPD17 UES1106
Text: PROCESS CPD17 Central Ultra Fast Rectifier TM Semiconductor Corp. 3 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 87 x 87 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 69.5 x 69.5 MILS Top Side Metalization
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CPD17
1N5802
1N5806
UES1101
UES1106
CMR3U-01
19-September
1N5806
mesa die
CPD17
UES1106
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1N5811
Abstract: 1N5807 CPD18 CUDD8-02 UES1301 UES1306 UES1401 UES1403
Text: PROCESS CPD18 Central Ultra Fast Rectifier TM Semiconductor Corp. 8 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 98 x 98 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 82.5 x 82.5 MILS Top Side Metalization
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CPD18
1N5807
1N5811
UES1301
UES1306
UES1401
UES1403
CUDD8-02
19-September
1N5811
CPD18
UES1306
UES1403
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MARKING R6 SOT-363
Abstract: No abstract text available
Text: CMKD4448 SURFACE MOUNT TRIPLE ISOLATED HIGH SPEED SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD4448 type contains three 3 Isolated High Speed Silicon Switching Diodes, manufactured by the epitaxial planar
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CMKD4448
OT-363
100mA
19-September
MARKING R6 SOT-363
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Untitled
Abstract: No abstract text available
Text: Package Details - SOD-882L Mechanical Drawing Lead Code: 1 Cathode 2) Anode Part Marking: One Character Alpha/Numeric Code Mounting Pad Geometry Dimensions in mm) Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R0 (19-September 2007)
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OD-882L
19-September
EIA-481-1-A
28-September
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CMR1U-01
Abstract: CMR1U-01M CPD16 UES1001 UES1003 UF4007
Text: PROCESS CPD16 Central Ultra Fast Rectifier TM Semiconductor Corp. 1.0 Amp Glass Passivated Rectifier Chip PROCESS DETAILS Process GLASS PASSIVATED MESA Die Size 50 x 50 MILS Die Thickness 12.2 MILS Anode Bonding Pad Area 34 x 34 MILS Top Side Metalization
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CPD16
UES1001
UES1003
UF4001
UF4007
CMR1U-01
CMR1U-01M
19-September
CPD16
UES1003
UF4007
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"Silicon Controlled Rectifiers" 35 amp
Abstract: No abstract text available
Text: CS39-4B CS39-4D CS39-4M CS39-4N SILICON CONTROLLED RECTIFIER 4 AMP, 200 THRU 800 VOLTS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CS39-4B series types are hermetically sealed silicon controlled rectifiers designed for sensing circuit applications and
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CS39-4B
CS39-4D
CS39-4M
CS39-4N
19-September
"Silicon Controlled Rectifiers" 35 amp
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c303 diode
Abstract: No abstract text available
Text: CMKD3003DO SURFACE MOUNT DUAL, ISOLATED, OPPOSING LOW LEAKAGE SILICON SWITCHING DIODES w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKD3003DO contains two 2 Isolated Opposing Silicon Switching Diodes, manufactured by the epitaxial planar process,
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CMKD3003DO
OT-363
100mA
200mA
300mA
19-September
c303 diode
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PDF
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bond wire gold
Abstract: No abstract text available
Text: Package Details - SOT-223C Mechanical Drawing Lead Code: Part Marking: Full Part Number. Reference individual device datasheet. Mounting Pad Geometry Dimensions in mm Central TM Semiconductor Corp. w w w. c e n t r a l s e m i . c o m R1 (5-November 2007)
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OT-223C
EIA-481-1-A
Custom333-86-4
19-September
bond wire gold
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PDF
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transistor k87
Abstract: CMKT5078 CMKT5087 CMKT5088
Text: Central CMKT5078 CMKT5087 CMKT5088 TM Semiconductor Corp. ULTRAmini SURFACE MOUNT SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMKT5078 , CMKT5087, and CMKT5088, are Silicon transistors in an ULTRAmini™ surface mount package, designed for applications requiring high
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CMKT5078
CMKT5087
CMKT5088
CMKT5087,
CMKT5088,
OT-363
transistor k87
CMKT5078
CMKT5087
CMKT5088
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C1R sot23
Abstract: No abstract text available
Text: Central CMPT5088 CMPT5089 TM Semiconductor Corp. SURFACE MOUNT NPN SILICON TRANSISTORS DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPT5088, CMPT5089 types are NPN silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package,
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CMPT5088
CMPT5089
CMPT5088,
OT-23
20MHz
C1R sot23
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2N5248
Abstract: jfet to 92 jfet marking code JFET APPLICATIONS
Text: 2N5248 w w w. c e n t r a l s e m i . c o m N-CHANNEL SILICON JFET The CENTRAL SEMICONDUCTOR 2N5248 is an N-Channel silicon JFET designed for high frequency amplifier and oscillator applications. MARKING: FULL PART NUMBER TO-92 CASE MAXIMUM RATINGS: TA=25°C
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2N5248
2N5248
19-September
jfet to 92
jfet marking code
JFET APPLICATIONS
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Untitled
Abstract: No abstract text available
Text: PROCESS CP331 Power Transistor NPN - High Voltage Darlington Transistor Chip PROCESS DETAILS Die Size 39.4 x 39.4 MILS Die Thickness 9.1 MILS Base Bonding Pad Area 7.9 x 7.9 MILS Emitter Bonding Pad Area 7.9 x 7.9 MILS Top Side Metalization Al-Si - 30,000Å
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CP331
CZT2000
19-September
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Untitled
Abstract: No abstract text available
Text: Voltage Transducer LV 100-750/SP4 For the electronic measurement of voltages: DC, AC, pulsed., with galvanic isolation between the primary circuit and the secondary circuit. Electrical data Features Primary nominal voltage rms Primary voltage, measuring range
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100-750/SP4
19September
2011/Version
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Untitled
Abstract: No abstract text available
Text: Central CMHZ5221B THRU CMHZ5281B TM Semiconductor Corp. SURFACE MOUNT ZENER DIODE 2.4 VOLTS THRU 200 VOLTS 500mW, 5% TOLERANCE DESCRIPTION: The CENTRAL SEMICONDUCTOR CMHZ5221B Series Silicon Zener Diode is a high quality voltage regulator, manufactured in a surface
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CMHZ5221B
CMHZ5281B
500mW,
OD-123
CMHZ5222B
CMHZ5223B
CMHZ5224B
CMHZ5225B
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