1MX16, Search Results
1MX16, Price and Stock
GEFRAN spa F067391 (MX1-6-M-B17U-1-5-D-4 2130X000X00)Mercury Filled - 420mA Output - ATEX |
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F067391 (MX1-6-M-B17U-1-5-D-4 2130X000X00) | Bulk | 1 |
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IBM 1MX16-50EDOTSOP |
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1MX16-50EDOTSOP | 2,826 |
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IBM 1MX16-50EDOTSOP5.0V |
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1MX16-50EDOTSOP5.0V | 2,826 |
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IBM 1MX1650EDO |
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1MX1650EDO | 2,826 |
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Samsung Semiconductor 1MX16-45EDOTSOP1KREF |
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1MX16-45EDOTSOP1KREF | 125 |
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1MX16, Datasheets (1)
Part |
ECAD Model |
Manufacturer |
Description |
Curated |
Datasheet Type |
PDF |
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1MX16Y3VTW | StarRam | 1 x 16 SYNCHRONOUS DRAM | Original |
1MX16, Datasheets Context Search
Catalog Datasheet |
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PDF |
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Contextual Info: KMM466S104CT_ 144pin SDRAM SODIMM KMM466S104CT SDRAM SODIMM 1Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S104CT is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM466S104CT_ 144pin KMM466S104CT 1Mx64 1Mx16 400mil 144-pin | |
Contextual Info: KMM366S104CTL PC66 SDRAM MODULE KMM366S104CTL SDRAM DIMM 1Mx64 SDRAM DIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM366S104CTL is a 1M bit x 64 Synchronous Dynamic RAM high density memory module. The Samsung |
OCR Scan |
KMM366S104CTL KMM366S104CTL 1Mx64 1Mx16 400mil 166-pin 168-pin | |
si1816Contextual Info: GM71 V S 18160C(CL) 1Mx16,3.3V, 1K Ref, FP The G M 71V (S )1 8 16 0C /C L is the new generation dynamic RAM organized 1,048,576 x 16 bit. G M 71V(S) 18160C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process |
OCR Scan |
18160C 1Mx16 18160C/CL GM71V 400mil 100us. 100us, si1816 | |
XC5LContextual Info: KMM466S204CT 144pin SDRAM SODIMM KMM466S204CT SDRAM SODIMM 2Mx64 SDRAM SODIMM based on 1Mx16,4K Refresh, 3.3V Synchronous DRAMs with SPD GENERAL DESCRIPTION FEATURE The Samsung KMM466S204CT Is a 2M bit x 64 Synchronous Dynamic RAM high density memory module. The SamsunQ |
OCR Scan |
KMM466S204CT KMM466S204CT 144pin 2Mx64 1Mx16 KMM486S204CT 400mII 144-pin XC5L | |
Contextual Info: DRAM MODULE KMM364C124AJ KMM364C124AJ Fast Page Mode 1Mx64 DRAM DIMM based on 1Mx16,1K Refresh, 5V G E N E R A L DESCRIPTION FE A T U R E S The Samsung KMM 364C124AJ is a 1M bit x 64 Dynamic RAM high density memory module. The Samsung KM M 364C124AJ consists of four C M O S |
OCR Scan |
KMM364C124AJ KMM364C124AJ 1Mx64 1Mx16 364C124AJ 1Mx16bit 42-pin 400mil 48pin | |
Contextual Info: SIEMENS Summary of Types Summary of Types Type | Ordering | Code Package Description DRAM Page i Memory Components HYB 514100BJ-50 067100-0971 P-SOJ-26/20-5 4 M X 1,5 V, 50 ns 47 HYB514100BJ-60 067100-0759 P-SOJ-26/20-5 4 M x 1, 5 V, 60 ns 47 HYB 514100BJ-70 |
OCR Scan |
P-SOJ-26/20-5 | |
SM71CContextual Info: GM71C S 18163C(CL) 1Mx16, 5V, 1K Ref, EDO Features T h e G M 7 1 C (S )1 8 1 6 3 C /C L is th e n ew generation dynamic RAM organized 1,048,576 x 16 bit. G M 71C (S )18163C /C L has realized higher density, higher perform ance and various functions by utilizing advanced CM OS process |
OCR Scan |
GM71C 18163C 1Mx16, 18163C/CL 42pin 100us. 100us, SM71C | |
microtek inverter circuit
Abstract: SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49
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Original |
PM3575 PMC-981057 microtek inverter circuit SST28F040 data circuit schematics satellite connector PMC3370 u34 c634 12vdc to 120vac inverter schematic diagram smd diode L48 R735-R738 DS1834AS smd diode code L49 | |
IBM0316809CT3D80
Abstract: IBM0316169C IBM0316809C
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Original |
IBM0316409C IBM0316809C IBM0316169C IBM03164B9C cycles/64ms IBM0316809CT3D80 IBM0316169C IBM0316809C | |
Contextual Info: IITSU February 1997 Revision 1.0 data sheet ESA2UN321 1/4 -(60/70)(J/T)(G/S)-S 8MByte (2M x 32) CMOS EDO DRAM Module General Description The ESA2UN321(1/4)-(60/70)(J/T)(G/S)-S is a high performance, EDO (Extended Data Out) 8-megabyte dynamic RAM module organized as 2M words by 32bits, in a 72-pin, leadless, single-in-line memory module (SIMM) package. ESA2UN3211 supports |
OCR Scan |
ESA2UN321 32bits, 72-pin, ESA2UN3211 ESA2UN3214 MB811 72-pin 144-pin 168-pin | |
edo ram 4Mx16
Abstract: 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16
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OCR Scan |
16M-bit 16400C 17400C 16403C 17403C 16400HG edo ram 4Mx16 71V18163CJ6 16mx4 edo ram 16Mx4 1MX16 | |
0316169CT3DContextual Info: I = = = ¥ = = = = IB M 0 3 1 6 4 0 9 C - = IB M 0 3 1 6 8 0 9 C IB M 0 3 1 6 1 6 9 C IB M 0 3 1 6 4 B 9 C P relim inary 1M x16, -80; -360 16M b S yn ch ro n o u s D R A M -D ie R evision D Features • Multiple Burst Read with Single Write Option • High Performance: |
OCR Scan |
400nA- 1Mx16 0316169CT3D | |
JRC 45600
Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
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OCR Scan |
ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541 |