Untitled
Abstract: No abstract text available
Text: White Electronic Designs W2Z1M72SJ Preliminary* 72Mb, 1Mx72 Synchronous Pipeline Burst NBL SRAM FEATURES DESCRIPTION Fast clock speed: 225, 200, 166 and 150MHz The WEDC SyncBurst - SRAM family employs high-speed, low-power CMOS designs that are fabricated using an
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W2Z1M72SJ
1Mx72
150MHz
1Mx36
W2Z1M72SJ35ES
W2Z1M72SJ38ES
W2Z1M72SJ28BC
W2Z1M72SJ30BC
W2Z1M72SJ35BC
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IBM REV 2.8
Abstract: 4620 IBM11M4730C4M
Text: IBM11M4730C4M x 72 E12/10, 5.0V, Au. IBM11M1735B 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Extended Data Out Page Mode DIMM • Performance: -60 -70 RAS Access Time 60ns 70ns CAS Access Time 20ns 25ns
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IBM11M4730C4M
E12/10,
IBM11M1735B
1Mx72
104ns
124ns
IBM REV 2.8
4620
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Untitled
Abstract: No abstract text available
Text: IBM11M1730BB1M x 72 E10/10, 3.3V, Au. IBM11M1730B IBM11M1730BB 1M x 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 tRAC RAS Access Time 60ns 70ns tCAC CAS Access Time
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IBM11M1730BB1M
E10/10,
IBM11M1730B
IBM11M1730BB
1Mx72
110ns
130ns
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PDF
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1720b
Abstract: No abstract text available
Text: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: - • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Buffered inputs except RAS, Data
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OCR Scan
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IBM11M1720B
1Mx72
110ns
130ns
50H4346
IBM11M1720B
000HH1B
1720b
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IBM 1Mx4
Abstract: 1MX16
Text: 4. 8/4 Byte DIMM CROSS REFERENCE 8 Byte DIMM TYPE 1Mx64 P a rity Voltage 5V Com pany SEC 3.3V NEC Hitachi SEC 1Mx72 ( P a r ity ) 5V SEC 1 Mx72 (E C C ) 5V IBM SEC 3.3V NEC IBM Hitachi SEC 2M x64 ( P a r ity ) 2M x72 ( P a r ity ) 2M x72 (E C C ) 5V 3.3V
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OCR Scan
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1Mx64
364C120C
KMM364C124A
C-421000AA64
HB56A164EJ
364V120C
364V124A
372C122C
372C125A
05H0902
IBM 1Mx4
1MX16
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372E1 24BT KMM372E1 24 BT Fast Page with EDO Mo de 1M x 72 DRAM DIMM with ECC using 1 Mx16 & 1 Mx4, 1K Refresh, 5V G E N E R A L DESCRI PTION F E A TU RE S The Samsung KM M372E124BT is a 1Mx72bits Dynamic RAM • Part Identification high density memory module. The Samsung KM M 372E124BT
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OCR Scan
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KMM372E1
M372E124BT
1Mx72bits
372E124BT
1Mx16bits
400mil
300mil
16bits
48pin
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Untitled
Abstract: No abstract text available
Text: IBM11M1730BA 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for ECC applications • 1Mx72 Fast Page Mode DIMM • System Performance Benefits: - Buffered inputs except RAS, Data • Performance:
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OCR Scan
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IBM11M1730BA
1Mx72
110ns
130ns
64G1555
MMDL09DSU-00
IBM11M1730BA
MMDL09DS
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M1720B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for byte-write parity applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: Buffered inputs except RAS, Data
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OCR Scan
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IBM11M1720B
1Mx72
110ns
130ns
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PDF
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L50H
Abstract: No abstract text available
Text: IB M 1 1 M 1 7 3 0 B IB M 1 1 M 1 7 3 0 B B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Optimized for ECC applications • System Performance Benefits: • 1Mx72 Fast Page Mode DIMM - • Performance: -60
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OCR Scan
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1Mx72
110ns
130ns
IBM11M1730B
IBM11M1730BB
50H4347
SA14-4607-02
L50H
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 372V1 24B T K M M 3 7 2 V 1 2 4 B T with Fast Page Mode 1M x 72 DRAM DIMM with ECC using 1 Mx16 & 1 Mx4, 1K Refresh , 3.3V G E N E R A L DESCRI PTI ON F E A TU RE S The Samsung KMM 372V124BT is a 1Mx72bits Dynamic RAM • Part Identification
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OCR Scan
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372V1
372V124BT
1Mx72bits
300mil
16bits
48pin
168-pin
M372V124BT
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PDF
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l06d
Abstract: No abstract text available
Text: IB M 1 1 M 1 7 2 0 B A 1M x 72 D R A M M O D U LE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • Au contacts • Optimized for byte-write parity applications • 1Mx72 Fast Page Mode DIMM • System Performance Benefits: • Performance:
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OCR Scan
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1Mx72
110ns
130ns
64G1558
MMDL06DSU-00
l06d
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PDF
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Untitled
Abstract: No abstract text available
Text: DR A M M O D U L E KM M 374F1 24B J1 KM M 374F1 24B J1 ED O M o d e wi t h ou t buffer 1M x 72 DRAM DIMM with ECC using 1 M x16 & 1 Mx4, 1K Refresh, 3.3V G E N E R A L DESCRIPTION FE A TU R ES The Samsung KMM374F124BJ1 is a 1Mx72bits Dynamic RAM Part Identification
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OCR Scan
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374F1
KMM374F124BJ1
1Mx72bits
1Mx16bits
400mil
300mil
168-pin
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PDF
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KM44V1004CJ
Abstract: No abstract text available
Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V G EN ERA L DESCRIPTIO N FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS
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OCR Scan
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KMM372F124AJ
KMM372F124AJ
1Mx72
1Mx16
1Mx16bit
400mil
300mil
16bits
KM44V1004CJ
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PDF
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Samsung Capacitor sse
Abstract: No abstract text available
Text: DRAM MODULE KMM372V120CJ/CT KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372V120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The S am su ng
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OCR Scan
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KMM372V120CJ/CT
1Mx72
KMM372V120CJ/CT
372V120C
48pin
168-pin
KMM372V120C
20nsthat
Samsung Capacitor sse
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PDF
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1Mx72
Abstract: No abstract text available
Text: IBM11M1735B 1M X 72 DRAM MODULE Features • Optimized for ECC applications • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • System Performance Benefits: • 1Mx72 Extended Data Out Page Mode DIMM • Performance: -60 tRAC RAS Access Time
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OCR Scan
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IBM11M1735B
1Mx72
104ns
124ns
Pack54
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372V122CJ/CT DRAM MODULE KM M372V122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 3.3V FEATURES GENERAL DESCRIPTION • Performance Range: The Samsung KMM372V122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V122C consists of sixteen CMOS
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OCR Scan
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KMM372V122CJ/CT
M372V122CJ/CT
1Mx72
KMM372V122C
KMM372V122C-7
300mil
110ns
130ns
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PDF
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Untitled
Abstract: No abstract text available
Text: KMM372V120CJ/CT DRAM MODULE KMM372V120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372V120C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372V120C consists of eighteen
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OCR Scan
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KMM372V120CJ/CT
KMM372V120CJ/CT
1Mx72
KMM372V120C
300mil
48pin
168-pin
cycles/16ms
1000mil)
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F124AJ KMM372F124AJ with EDO Mode 1Mx72 DRAM DIMM with ECC based on 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124AJ is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372F124AJ consists of four CMOS
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OCR Scan
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KMM372F124AJ
KMM372F124AJ
1Mx72
1Mx16
1Mx16bit
400mil
300mil
16bits
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PDF
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KM44C1000CJ
Abstract: No abstract text available
Text: KMM372C122CJ/CT DRAM MODULE KMM372C122CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with QCAS, 1K Refresh, 5V FEATURES G EN ERA L D ESC RIPTIO N The Samsung KMM372C122C is a 1M bit x 72 Dynamic RAM high density memory module. The Samsung KMM372C122C consists of sixteen CMOS
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OCR Scan
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KMM372C122CJ/CT
KMM372C122CJ/CT
1Mx72
KMM372C122C
300mii
48pin
KM44C1000CJ
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PDF
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KMM364E124AJ-6
Abstract: CT-17 AS5T KMM372V213AJ KMM364C1 CT55H
Text: 1. INTRODUCTION 8 Byte DIMM Fast Page Mode Ì 5V 1Mx64 1Mx72 V— KMM364C120CJ/CT-5 H KMM364C120CJ/CT-6 ' H KMM364C124AJ-6 H KMM364C124AJ-7 T- ! KMM372C120CJ/CT-5 H KMM372C120CJ/CT-6 — I KMM372C120CJ1/CT 1-5 H KMM372C120CJ1/CT1-6 — I KMM372C122CJ/CT-5
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OCR Scan
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1Mx64
1Mx72
KMM364C120CJ/CT-5
KMM364C120CJ/CT-6
KMM364C124AJ-6
KMM364C124AJ-7
KMM372C120CJ/CT-5
KMM372C120CJ/CT-6
KMM372C120CJ1/CT
KMM372C120CJ1/CT1-6
KMM364E124AJ-6
CT-17
AS5T
KMM372V213AJ
KMM364C1
CT55H
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PDF
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EH18
Abstract: No abstract text available
Text: DRAM MODULE KMM372C120CJ/CT KMM372C120CJ/CT Fast Page Mode 1Mx72 DRAM DIMM with ECC, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES • Performance Range: The Sam sung KM M 372C 120C is a 1M bit x 72 D ynam ic RAM high density m em ory module. The tRAC tCAC 18ns
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OCR Scan
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KMM372C120CJ/CT
1Mx72
KMM372C120CJ/CT
48pin
168-pin
KMM372C120C
110ns
130ns
KMM37
EH18
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PDF
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372F124BJ KMM372F124BJ Fast Page with EDO Mode 1M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, 1K Refresh, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM372F124BJ is a 1Mx72bits Dynamic RAM high density memory module. The Samsung KMM372F124BJ
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OCR Scan
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KMM372F124BJ
KMM372F124BJ
1Mx16
1Mx72bits
1Mx16bits
400mil
300mil
16bits
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PDF
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1314E
Abstract: No abstract text available
Text: IB M 1 1 N 1 6 4 5 L IB M 1 1 N 1 7 3 5 Q 1 M x 6 4 /7 2 D R A M M o d u le Features • 168 Pin JEDEC Standard, Unbuffered 8 Byte Dual In-line Memory Module • Optimized for byte-write, non-parity, or ECC applications. • 1 Mx64, 1Mx72 Extended Data Out Page Mode
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OCR Scan
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1Mx72
SA14-4630-05
1314E
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PDF
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Untitled
Abstract: No abstract text available
Text: IBM11M1730B 1M X 72 DRAM MODULE Features • 168 Pin JEDEC Standard, 8 Byte Dual In-line Memory Module • 1Mx72 Fast Page Mode DIMM • Performance: -60 -70 Wc RAS Access Time 60ns 70ns tcAC CAS Access Time 20ns 25ns w Access Time From Address 35ns 40ns tRC
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OCR Scan
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IBM11M1730B
1Mx72
110ns
130ns
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PDF
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