pc133 sdram
Abstract: HYM4V33100DTYG-75
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hynix HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
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1Mx32
PC133
1Mx16
HYM4V33100DTYG
1Mx16bits
1Mx16bits
400mil
50pin
132pin
pc133 sdram
HYM4V33100DTYG-75
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F224CJ1 KMM366F224CJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224CJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224CJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil
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KMM366F224CJ1
1Mx16,
2Mx64bits
1Mx16bits
400mil
168-pin
KMM366F224CJ1
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Untitled
Abstract: No abstract text available
Text: M53210124CE2/CJ2 DRAM MODULE M53210124CE2/CJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124C is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124C consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or
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M53210124CE2/CJ2
M53210124CE2/CJ2
1Mx16,
M53210124C
1Mx32bits
M53210124C
1Mx16bits
42-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE M53210224CW2/CB2 M53210224CW2/CB2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ
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M53210224CW2/CB2
M53210224CW2/CB2
1Mx16,
M53210224C
2Mx32bits
M53210224C
1Mx16bits
42-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: 1Mx32 bits PC133 SDRAM AIMM based on 1Mx16 SDRAM with LVTTL, 2 banks & 4K Refresh HYM4V33100DTYG Series DESCRIPTION The Hyundai HYM4V33100DTYG Series are 1Mx16bits Synchronous DRAM Modules. The modules are composed of two 1Mx16bits CMOS Synchronous DRAMs in 400mil 50pin TSOP-II package, on a 132pin glass-epoxy printed circuit board. Two 0.22uF and one
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1Mx32
PC133
1Mx16
HYM4V33100DTYG
1Mx16bits
400mil
50pin
132pin
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Untitled
Abstract: No abstract text available
Text: Preliminary M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or
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M53210124DE2/DJ2
1Mx16,
M53210124D
1Mx32bits
1Mx16bits
42-pin
72-pin
M53210124DE2/DJ2
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM366F224BJ1 KMM366F224BJ1 EDO Mode without buffer 2M x 64 DRAM DIMM using 1Mx16, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM366F224BJ1 is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM366F224BJ1 consists of eight CMOS 1Mx16bits DRAMs in SOJ 400mil
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KMM366F224BJ1
KMM366F224BJ1
1Mx16,
2Mx64bits
1Mx16bits
400mil
168-pin
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Untitled
Abstract: No abstract text available
Text: Preliminary M53210224DE2/DJ2 DRAM MODULE M53210224DE2/DJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224D is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224D consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ
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M53210224DE2/DJ2
1Mx16,
M53210224D
2Mx32bits
1Mx16bits
42-pin
72-pin
M53210224DE2/DJ2
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K4F151611D
Abstract: No abstract text available
Text: M53210124DE2/DJ2 DRAM MODULE M53210124DE2/DJ2 with Fast Page Mode 1M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210124D is a 1Mx32bits Dynamic RAM high density memory module. The Samsung M53210124D consists of two CMOS 1Mx16bits DRAMs in 42-pin SOJ packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or
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M53210124DE2/DJ2
M53210124DE2/DJ2
1Mx16,
M53210124D
1Mx32bits
M53210124D
1Mx16bits
42-pin
72-pin
K4F151611D
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM364C224BJ KMM364C224BJ with Fast Page Mode 2M x 64 DRAM DIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung KMM364C224BJ is a 2Mx64bits Dynamic RAM high density memory module. The Samsung KMM364C224BJ consists of eight CMOS 1Mx16bits DRAMs in 42-pin SOJ
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KMM364C224BJ
KMM364C224BJ
1Mx16,
2Mx64bits
1Mx16bits
42-pin
400mil
16bits
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Untitled
Abstract: No abstract text available
Text: M53210224CE2/CJ2 DRAM MODULE M53210224CE2/CJ2 with Fast Page Mode 2M x 32 DRAM SIMM using 1Mx16, 1K Refresh, 5V GENERAL DESCRIPTION FEATURES The Samsung M53210224C is a 2Mx32bits Dynamic RAM high density memory module. The Samsung M53210224C consists of four CMOS 1Mx16bits DRAMs in 42-pin SOJ
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M53210224CE2/CJ2
M53210224CE2/CJ2
1Mx16,
M53210224C
2Mx32bits
M53210224C
1Mx16bits
42-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM374F224CJ1 KMM374F224CJ1 EDO Mode without buffer 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224CJ1 is a 2Mx72bits Dynamic RAM high density memory module. The Samsung KMM374F224CJ1 consists of eight CMOS 1Mx16bits DRAMs
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KMM374F224CJ1
KMM374F224CJ1
1Mx16
2Mx72bits
1Mx16bits
400mil
300mil
168-pin
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ks0164
Abstract: 3231 audio ic hd3-33 KS0165 MPU-401 wavetable synthesizer digital reverb processor diagram samsung i2s MA10 MPU401
Text: KS0165 MULTIMEDIA AUDIO OVERVIEW The KS0165 wavetable synthesizer with effect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The
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KS0165
KS0165
32-voice
16-bit
MPU-401
16-bit,
MPU-401
ks0164
3231 audio ic
hd3-33
wavetable synthesizer
digital reverb processor diagram
samsung i2s
MA10
MPU401
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EDI416S4030A
Abstract: No abstract text available
Text: EDI416S4030A 1M x 16 Bits x 4 Banks Synchronous DRAM FEATURES DESCRIPTION • Single 3.3V power supply The EDI416S4030A is 67,108,864 bits of synchronous high data rate DRAM organized as 4 x 1,048,576 words x 16 bits. Synchronous design allows precise cycle control with the use of system clock,
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EDI416S4030A
EDI416S4030A
83MHz
100MHz)
83MHz)
len471)
EDI416S4030A10SI
1Mx16bitsx4banks
100MHz
EDI416S4030A12SI
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Untitled
Abstract: No abstract text available
Text: KMM332V204BT-L KMM332V224BT-L DRAM MODULE KMM332V204BT-L & KMM332V224BT-L with Fast Page Mode 2M x 32 DRAM SODIMM, using1MX16, 4K & 1K Ref., 3.3V, Low power/Self-Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM332V20 2 4BT is a 2M x 32 bits Dynamic RAM high density memory module. The Samsung
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KMM332V204BT-L
KMM332V224BT-L
KMM332V224BT-L
using1MX16,
KMM332V20
1Mx16bits
44-pin
72-pin
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KMM5321200C2W
Abstract: KMM5321200C2WG
Text: DRAM MODULE KMM5321200C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5321200CW/CWG to KMM5321200C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE
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KMM5321200C2W/C2WG
KMM5321200CW/CWG
KMM5321200C2W/C2WG
1Mx16,
KMM5321200C2W
1Mx32bits
1Mx16bits
KMM5321200C2WG
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KMM5322204C2W
Abstract: KMM5322204C2WG
Text: DRAM MODULE KMM5322204C2W/C2WG Revision History Version 0.0 November 1997 • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5322204CW/CWG to KMM5322204C2W/C2WG caused by PCB revision . -2- Rev. 0.0 (Nov. 1997) DRAM MODULE
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KMM5322204C2W/C2WG
KMM5322204CW/CWG
KMM5322204C2W/C2WG
1Mx16
KMM5322204C2W
2Mx32bits
cycles/16ms
KMM5322204C2WG
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1MX16
Abstract: KMM5361203C2W KMM5361203C2WG
Text: DRAM MODULE KMM5361203C2W/C2WG 1Mx36 DRAM SIMM 1MX16 Base Revision 0.0 November 1997 -1- Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5361203C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5361203CW/CWG to KMM5361203C2W/C2WG caused by PCB revision .
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KMM5361203C2W/C2WG
1Mx36
1MX16
KMM5361203CW/CWG
KMM5361203C2W/C2WG
KMM5361203C2W
KMM5361203C2WG
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KM M 374F 224B J1 KM M 374F 224B J1 EDO M o d e w i t h o u t b u f fe r 2M x 72 DRAM DIMM with ECC using 1Mx16 & 1Mx4, Dual Bank, 3.3V GENERAL DESCRIPTION FEATURES The Samsung KMM374F224BJ1 is a 2Mx72bits Dynamic RAM consists ot eight CMOS 1Mx16bits DRAMs in SOJ 400mil
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1Mx16
KMM374F224BJ1
2Mx72bits
1Mx16bits
400mil
300mil
168-pin
374F224BJ1
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362203BW/BWG KMM5362203BW/BWG with Fast Page Mode 2M x 36 DRAM SIMM using 1Mx16 and 1Mx4 Quad CAS, 1K Refresh GENERAL DESCRIPTION FEATURES The Samsung KMM5362203BW is a 2Mx36bits Dynamic RAM high density memory module. The Samsung KMM5362203BW consists of four CMOS 1Mx16bits DRAMs
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KMM5362203BW/BWG
KMM5362203BW/BWG
1Mx16
KMM5362203BW
2Mx36bits
1Mx16bits
42-pin
24-pin
72-pin
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM5362205C2W/C2WG 2Mx36 DRAM SIMM 1MX 16 Base, Quad CAS EDO Revision 0.0 November 1997 Rev. 0.0 (Nov. 1997) DRAM MODULE KMM5362205C2W/C2WG Revision History Version 0.0 (November 1997) • Changed module PCB from 6-Layer to 4-Layer. • Changed Module Part No. from KMM5362205CW/CWG to KMM5362205C2W/C2WG caused by PCB revision .
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KMM5362205C2W/C2WG
2Mx36
KMM5362205CW/CWG
KMM5362205C2W/C2WG
1Mx16
KMM5362205C2W
2Mx36bits
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KS0164
Abstract: samsung schematics processor KS0174
Text: KS0164 Multimedia Cl Cf*1 ELECTRONICS OVERVIEW The KS0164 wavetable synthesizer chip represents the state-ofthe-art in multimedia audio technology. The KS0164 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU and MPU-401 compatibility into a single chip.
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KS0164
KS0164
32-voice
16-bit
MPU-401
16-bit,
samsung schematics processor
KS0174
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Untitled
Abstract: No abstract text available
Text: DRAM MODULE KMM372E1 24BT KMM372E1 24 BT Fast Page with EDO Mo de 1M x 72 DRAM DIMM with ECC using 1 Mx16 & 1 Mx4, 1K Refresh, 5V G E N E R A L DESCRI PTION F E A TU RE S The Samsung KM M372E124BT is a 1Mx72bits Dynamic RAM • Part Identification high density memory module. The Samsung KM M 372E124BT
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KMM372E1
M372E124BT
1Mx72bits
372E124BT
1Mx16bits
400mil
300mil
16bits
48pin
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74LS245 buffer ic
Abstract: KS0164 mpu 401 roland d5 multi timbral
Text: KS0165 MULTIMEDIA AUDIO O V E R V IE W The KS0165wavetable synthesizer with ettect processor chip represents the state-of-the-art in multimedia audio technology. The KS0165 combines a high-quality 32-voice wavetable synthesizer, a powerful 16-bit CPU, MPU-401 compatibility, effect processor & 16k delay RAM into a single chip. The
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KS0165
KS0165wavetable
KS0165
32-voice
16-bit
MPU-401
16-bit,
74LS245 buffer ic
KS0164
mpu 401
roland d5 multi timbral
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