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    Microchip Technology Inc 1N5649A

    TVS DIODE 40.2VWM 64.8VC DO13
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    TVS DIODE 40.2VWM 64.8VC DO13
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    Microchip Technology Inc 1N5649A-TR

    TVS DIODE 40.2VWM 64.8VC DO13
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    TVS DIODE 40.2VWM 64.8VC DO13
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    Microchip Technology Inc JANTXV1N5649A

    TVS DIODE 40.2VWM 64.8VC DO13
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    1N5649A Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    1N5649A Littelfuse Silicon Avalanche Diodes - 1500 Watt Metal Axial Leaded Transient Voltage Suppressors Original PDF
    1N5649A Microsemi TVS - Diodes, Circuit Protection, TVS DIODE 40.2VWM 64.8VC DO13 Original PDF
    1N5649A Microsemi Transient Absorption Zener Scan PDF
    1N5649A Microsemi Data Book 1983 Scan PDF
    1N5649A Microsemi Transient Absorption Zener Scan PDF
    1N5649A Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF
    1N5649(A) Unknown Z-diode (operation in reverse direction) Scan PDF
    1N5649A Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    1N5649A Unknown Shortform Semicon, Diode, and SCR Datasheets Short Form PDF
    1N5649A Unknown Catalog Scans - Shortform Datasheet Scan PDF
    1N5649A New England Semiconductor 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES Scan PDF
    1N5649A Semitron Data Book 1991 Scan PDF
    1N5649A STMicroelectronics Shortform Data Book 1988 Short Form PDF
    1N5649A Thomson Semiconductors Telecom Integrated Circuits Data Book 1985 Scan PDF
    1N5649A Thomson-CSF Shortform Semiconductor Catalogue 1982 Short Form PDF
    1N5649A/TR Microchip Technology TVS DIODE 40.2VWM 64.8VC DO13 Original PDF

    1N5649A Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5649A+JANTX Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage47 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current23.2


    Original     		1N5649A Voltage47 Voltage40 Current23 Voltage64 StyleDO-13 PDF

    1N5649A JANTXV

    Abstract: No abstract text available
    Text: 1N5649A+JANTXV Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage47 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current23.2


    Original     		1N5649A Voltage47 Voltage40 Current23 Voltage64 StyleDO-13 1N5649A JANTXV PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5649A+JAN Diodes Unidirectional Transient Suppressor Military/High-RelY Minimum Operating Temp øC Maximum Operating Temp (øC) V(BR) Nom.(V)Rev.Break.Voltage47 @I(R) (A) (Test Condition)1.0m V(RWM) (V) Work.Pk.Rev.Voltage40 I(PPM) Max.(A)Pk.Pulse Current23.2


    Original     		1N5649A Voltage47 Voltage40 Current23 Voltage64 StyleDO-13 PDF

    Untitled

    Abstract: No abstract text available
    Text: Part: 1N5649A Series: OBSOLETE - 1N56 Series - 1500W Hermetically Sealed Metal TVS Diode For Harsh Industrial Applications Technology:Silicon Avalanche Diode SADs PARAMETERS Package Type Pkg Type Axial Leaded Mount Method Mount Through Hole Maximum Reverse Leakage Current


    Original     		1N5649A Voltage10x1000Â 10x160Â 10x1000 10x1000Â PDF

    SMD Transistors w04 sot-23

    Abstract: transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355
    Text: RETURN TO PRODUCT CATALOG TABLE OF CONTENTS RETURN TO PRODUCT CATALOG INDEX RETURN TO DIODES INC. NEW PRODUCTS PAGE Product Catalog Diodes Incorporated 3050 E. Hillcrest Drive Westlake Village, CA 91362-3154 2000/2001 Specifications are subject to change without notice.


    Original     		represent9-14 SMD Transistors w04 sot-23 transistor SOT-23 w04 SB050 transistor IN4728A mosfet SMD w04 SN30SC4 smd diode code gs1m W01 SMD mosfet W04 sot 23 1s355 PDF

    1N5656A JANTX

    Abstract: No abstract text available
    Text: DIGITRON SEMICONDUCTORS 1N5629-1N5665 TRANSIENT ABSORPTION ZENER MAXIMUM RATINGS Operating and Storage Temperature -65 to +175°C DC Power Dissipation 1 watt @ TL ≤ 125°C, 3/8” from body Thermal Resistance 1500 watts for 10/1000 s with repetition rate of 0.01 @


    Original     		1N5629-1N5665 MIL-PRF-19500, 1N5656A JANTX PDF

    IN5648

    Abstract: 1N5631 IN5665A
    Text: 1N5629 - 1N5665A series 1N5629 - 1N5665A IN56 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES • • • • • • • • Stand-off voltage range 6.8 - 200 Volts Glass Passivated Junction


    Original     		1N5629 1N5665A 1N5665A sealed88 1N5651 1N5651A 1N5652 1N5652A 1N5653 IN5648 1N5631 IN5665A PDF

    CAT7105CA

    Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
    Text: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A


    Original     		5CE120C 5KE120CA 5CE120CA 5CE12A 5KE12A 5CE12C 5KE12CA 5CE12CA CAT7105CA mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al PDF

    1N5907 JANTX

    Abstract: 1N5662A JANTXV 1n5638a 1N5555 1N5558 1N5629A 1N5665A 1N5907 1N5660A 1N5665A JAN
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 24 June 2009. INCH-POUND MIL-PRF-19500/500E 24 March 2009 SUPERSEDING MIL-PRF-19500/500D 5 November 2003 * PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLAR TRANSIENT VOLTAGE SUPPRESSOR,


    Original     		MIL-PRF-19500/500E MIL-PRF-19500/500D 1N5555 1N5558, 1N5907, 1N5629A 1N5665A, MIL-PRF-19500. 1N5907 JANTX 1N5662A JANTXV 1n5638a 1N5558 1N5665A 1N5907 1N5660A 1N5665A JAN PDF

    SSP35n03

    Abstract: bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent
    Text: Cross Reference Guide Industry 1.5KE100A 1.5KE100CA 1.5KE10A 1.5KE10CA 1.5KE110A 1.5KE110CA 1.5KE11A 1.5KE11CA 1.5KE120A 1.5KE120CA 1.5KE12A 1.5KE12CA 1.5KE130A 1.5KE130CA 1.5KE13A 1.5KE13CA 1.5KE150A 1.5KE150CA 1.5KE15A 1.5KE15CA 1.5KE160A 1.5KE160CA 1.5KE16A


    Original     		5KE100A 5KE100CA 5KE10A 5KE10CA 5KE110A 5KE110CA 5KE11A 5KE11CA 5KE120A 5KE120CA SSP35n03 bc417 ksh200 equivalent 2N5457 equivalent ss8050 equivalent 1N34 equivalent FQP50N06 equivalent bd139 equivalent 2N5458 equivalent 2N3563 equivalent PDF

    in5647a

    Abstract: in5648 1N5660A thyristor t 558 f IN5665A 1N5645A series 1N5645 series 1N5655 1N5648 1N5645
    Text: Tr a n s i e n t V o l t a g e S u p p r e s s i o n T V S D i o d e s 1N5629 – 1N5665A Series Invisible Protection MAXIMUM RATINGS When no problems exist, Crydom TVS • Peak pulse power (PPK): 1500 watts Diodes are totally invisible to the circuits


    Original     		1N5629 1N5665A 1N5629 in5647a in5648 1N5660A thyristor t 558 f IN5665A 1N5645A series 1N5645 series 1N5655 1N5648 1N5645 PDF

    1N5629a

    Abstract: 1N5645A series 1N5555 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A
    Text: SENSITRON SEMICONDUCTOR 1N5555 to 1N5558 1N5907 1N5629A to 1N5665A TECHNICAL DATA DATA SHEET 5164, REV. A SJ SX SV SS Transient Voltage Suppressor Diode, 1500W • Hermetic, non-cavity glass package • Metallurgically bonded o o • Operating and Storage Temperature: -55 C to +175 C


    Original     		1N5555 1N5558 1N5907 1N5629A 1N5665A 1N5629A 1N5630A 1N5645A series 1N566 1N5645A 1N5558 1N5630A 1N5631A 1N5632A 1N5633A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1N5629 - 1N5665A series 1N56 SERIES 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) FEATURES Min 31.8 ● Breakdown voltage range 6.8 - 200 volts ● Glass passivated junction Max 5.33 ● Excellent clamping capability


    Original     		1N5629 1N5665A 1N5663A 1N5664 1N5664A 1N5665 1N5665A 1N5647A 1N5648 PDF

    Untitled

    Abstract: No abstract text available
    Text: The documentation and process conversion measures necessary to comply with this revision shall be completed by 8 October 1997 INCH-POUND MIL-PRF-19500/500C 8 July 1997 SUPERSEDING MIL-S-19500/500B 19 January 1993 PERFORMANCE SPECIFICATION SEMICONDUCTOR DEVICE, DIODE, SILICON, TRANSIENT VOLTAGE SUPPRESSOR


    Original     		MIL-PRF-19500/500C MIL-S-19500/500B 1N5555 1N5558, 1N5907, 1N5629A 1N5665A PDF

    1N566

    Abstract: 1N5645A series 1N5633A JANTXV 1N5629 1N5629A 1N5665 1N5665A IEC61000-4-4 JANTXV1N5629A 1N5645A JANTX
    Text: TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / 978 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com 1500 WATT UNIDIRECTIONAL TRANSIENT VOLTAGE SUPPESSOR Qualified per MIL-PRF-19500/500 DEVICES LEVELS * 1N5629 thru 1N5665


    Original     		MIL-PRF-19500/500 1N5629 1N5665 1N5629A 1N5665A 1N5665A T4-LDS-0096 DO-13 1N566 1N5645A series 1N5633A JANTXV 1N5665 IEC61000-4-4 JANTXV1N5629A 1N5645A JANTX PDF

    N5657

    Abstract: 1N5629 1NS6
    Text: Tr a n s Z o r b ^ General ^ ^ Semiconductor ^ • Industries, Inc. T R A N S IE N T V O L T A G E SUPPRESSORS 1N 5629 THRU 1N 5665A FEATURES • 1500 watts Peak Pulse Power dissipation • Available in ranges from 5.5 to 171 volts • MIL qualified per MIL-S-19500/500


    OCR Scan     		MIL-S-19500/500 200amps, N5657 1N5629 1NS6 PDF

    1N5631

    Abstract: 1N5648A 1N5664A
    Text: 1N5629 • 1N5665A SERIES IN56 Series 1500 WATT METAL AXIAL TRANSIENT VOLTAGE SUPPRESSORS (hermetically sealed package for harsh industrial environments) 31.8Min FEATURES ■ ■ ■ ■ ■ ■ ■ ■ Stand-off voltage range 6.8 - 200 Volts Glass Passivated Junction


    OCR Scan     		1N5629 1N5665A 1000ps) DO-13 1N5631 1N5648A 1N5664A PDF

    Untitled

    Abstract: No abstract text available
    Text: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.


    OCR Scan     		1N56S4 1N5664A 1N5665 1N5665A 1N5907 MIL-S-19500/500 1N6036 MIL-S-19500/434 PDF

    IN5644

    Abstract: lnbf 1N5907 1N5629 1N5629A 1N5630 1N5630A 1N5632 1N5633 1N5665
    Text: 1N5629 thru 1N5665 and 1N5907 Microsemi Corp. Features • • • • • • TRANSIENT ABSORBTION ZENER Protects circuits from harmful transients Absorbs 1 ms transients up to 1S0Q watts Clamps transient in 1 pico sec 1 watt continuous power dissipation


    OCR Scan     		1N5629 1N5665 1N5907 DO-13 IN5644 lnbf 1N5907 1N5629 1N5629A 1N5630 1N5630A 1N5632 1N5633 PDF

    Untitled

    Abstract: No abstract text available
    Text: NEW ENGLAND SEMICONDUCTOR 1N5629A thru 1N5665A 1500 WATT SILICON TRANSIENT SUPPRESSOR DIODES AVAILABLE IN VOLTAGES FROM 5.8V THRU 171V The NES 1N5629A to 1N5665A series of Silicon Voltage Transient Suppressor diodes are designed to protect airborne and telephone electronic equipment from


    OCR Scan     		1N5629A 1N5665A 1N5629A 1N5665A Stead1000 PDF

    Untitled

    Abstract: No abstract text available
    Text: im ia s T o t. . TransZorb QUICK REFERENCE GUIDE PROVIDING PROTECTION FOR :• • Telecommunications &:7S$ ' • Military ÌH • Computer • Industrial ■\. '’ • . .Test & Vyt. I\\ Instrumentation • Medical • Automotive A General Industriès, Inc.


    OCR Scan     		D3008R PDF

    STR F 5653

    Abstract: STR 5664 STR G 5653
    Text: G EN L in str / ^ ^ power SLE General ^ Semiconductor • Industries, Inc. D 3ÔT Ü1 3 7 T-K -Z3 GGGH^GT 250 I RANSZORB T R A N S IE N T VO LTA G E SUPPRESSORS 1N5629 THRU 1N5665A FEATURES APPLICATION CONT'D > 1500 watts Peak Pulse Power dissipation i Available in ranges from 5.5 to 171


    OCR Scan     		1N5629 1N5665A MIL-S-19500/500 STR F 5653 STR 5664 STR G 5653 PDF

    NEC 14324

    Abstract: No abstract text available
    Text: SEMICON COMPONENTS INC 5ÔE D • 0135157 00007TÌ i ■ T"-// — -2.5 SUPP1 M 'E Qfil DESCRIPTION FEATURES: . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage


    OCR Scan     		00007TÃ 12sec) 1N5662 1N5662A 1N5663 1N5663A 1N5664 1N5664A 1N5665 1N5665A NEC 14324 PDF

    Untitled

    Abstract: No abstract text available
    Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1N5629 + Series 1N5865A C 3 Y 3 0 M Control overpower ri k 1T 31.8 min. ¡1{5 .33 max. -» 7.5 9.0 25.4 min. l _I Smisibla PnxtèectSon MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): 1500 watts


    OCR Scan     		1N5629 1N5865A 10X1000 X10-1 1N56SEFJE5 500pcs) 1000pcs) 1N5629 PDF