35V-250V
Abstract: 5v Schottky barrier low leakage fast epitaxial diode 14F8 100ns-500ns
Text: E L E C T R O N I C Brief of Schottky Barrier Diode Friday, 7 August 2009 Schottky Barrier Diode Schottky Barrier Diode SBD indeed more and more extensively to putting to use on Switching-Mode Power Supply (SMPS) in stead of Fast Recovery Epitaxial Diode (FRED). Not only the highest Reverse Recovery Time (trr) but also the lowest Forward Voltage Drop (VF), both are the
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14F-8,
35V-250V
5v Schottky barrier
low leakage fast epitaxial diode
14F8
100ns-500ns
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1N5648
Abstract: LN5644 11 p IN5662A 1N5645 1N5629 1N5629A 1N5630 1N5630A 1/DIODE 1n564 1N5631A
Text: Zener Type No. Zene Voltage tlzT Volts @ mA Max. Zener Impedance @ Izi Ohms Zener Voltage Tolerance 1N5629 1N5629A 1N5630 1N5630A 6.8 6.8 7.5 7.5 10 10 10 10 1N5631 1N5631A 1N5632 1N5632A 1N5633 1N5633A 1N5634 1N5634A 1N5635 1NS635A 1N5636 1N5636A 1N5637 1N5637A
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1N5629
1N5629A
1N5630
1N5630A
500wait:
DO-13
1N5631
1N5631A
1N5632
1N5632A
1N5648
LN5644 11 p
IN5662A
1N5645
1N5630A
1/DIODE 1n564
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Untitled
Abstract: No abstract text available
Text: 1N5624GPTHRU 1N5627GP GLASS PASSIVATED JUNCTION RECTIFIER Reverse Voltage - 200 to 800 Volts Forward Current DQ-201 AD FEATURES ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High temperature metallurgical^ bonded construction
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1N5624GPTHRU
1N5627GP
DQ-201
MIL-S-19500
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N5657
Abstract: 1N5629 1NS6
Text: Tr a n s Z o r b ^ General ^ ^ Semiconductor ^ • Industries, Inc. T R A N S IE N T V O L T A G E SUPPRESSORS 1N 5629 THRU 1N 5665A FEATURES • 1500 watts Peak Pulse Power dissipation • Available in ranges from 5.5 to 171 volts • MIL qualified per MIL-S-19500/500
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MIL-S-19500/500
200amps,
N5657
1N5629
1NS6
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1n5624
Abstract: No abstract text available
Text: 1N5624 THRU 1N5627 GLASS PASSIVATED SILICON RECTIFIER Voltage - 200 to 800 Volts Current - 3.0 Amperes FEATURES ♦ Glass passivated cavity-free junction ♦ High temperaturae metallurgical^ bonded con structed rectifiers ♦ Hermetically sealed package
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1N5624
1N5627
MIL-S-19500
IL-S-19500/432.
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Untitled
Abstract: No abstract text available
Text: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.
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1N56S4
1N5664A
1N5665
1N5665A
1N5907
MIL-S-19500/500
1N6036
MIL-S-19500/434
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Untitled
Abstract: No abstract text available
Text: ZENER DIODES, GENERAL PURPOSE JED EC P a rt Num ber N o m in a l Zenar V o lt a g e a t l lr M a x im urn Z e n e r Zener Im p e d a n c e Test C u r re n t Z, <8 1, V, V o lt * 1 (m A l (O h m s ) 1N957B 1N 9 5 8 8 1N 9S98 1(4960B 1N 961B 6.8 7.5 8.2
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1N957B
4960B
1N962B
1NS53B
1N964B
1N965B
1NS65B
1I4968B
114971B
1N972B
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Untitled
Abstract: No abstract text available
Text: 1N5624GP.1N5627GP FAGOR 3 Amp. Glass Passivated Junction Rectifier Dimensions in mm. ò ou> g D0-201 AD Plastic Voltage 200 to 800 V. Current 3.0 A. at 70 °C. \J -3 ±0d\ _ 59.5 min._ Mounting instructions
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1N5624GP.
1N5627GP
D0-201
1N5620GP
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Tr431
Abstract: 1N1525 cs1256hg BSF17 dd04 18DB6A B1274 transistor 1N34A MP LT236 SN76
Text: I RJ 1 international, rectifier IR R e p la c e m ent P a rt No. 25710 25T12 « S ? S H fcx S yty P a rt No. IR R e p la c e m ent Z1012 Z1014 21016 Z1018 21020 AA138 AA140 AA142 AA2 AA20 IN34A IN34A JN34A TR-08 6F20D ZI022 Z1006 21008 7*0*0 21012 AA200
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25T12
Z1012
Z1014
Z1018
AA138
AA140
AA142
AA200
AA21Q
AA300
Tr431
1N1525
cs1256hg
BSF17
dd04
18DB6A
B1274 transistor
1N34A MP
LT236
SN76
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KL SN 102 94v-0
Abstract: diode EGP 30D circuit diagram of 5kw smps full bridge MELF ZENER DIODE color bands blue y-349 diode GI 2W06G DO-213AB smd diode color marking code 6j 507 SMD TRANSISTOR smd diode marking g2a zener Marking BJ9
Text: General Instrument / Power Semiconductor Division / I * r .jr > / INTRODUCTION General Instrument Corporation is a world leader in developing technology, systems and product solutions for the interactive delivery o f video and data. G l’s success results
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STR F 5653
Abstract: STR 5664 STR G 5653
Text: G EN L in str / ^ ^ power SLE General ^ Semiconductor • Industries, Inc. D 3ÔT Ü1 3 7 T-K -Z3 GGGH^GT 250 I RANSZORB T R A N S IE N T VO LTA G E SUPPRESSORS 1N5629 THRU 1N5665A FEATURES APPLICATION CONT'D > 1500 watts Peak Pulse Power dissipation i Available in ranges from 5.5 to 171
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1N5629
1N5665A
MIL-S-19500/500
STR F 5653
STR 5664
STR G 5653
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TC514258A
Abstract: 7g rac TC514258
Text: TC514258AP/AJ/AZ-7Û, TG514258ÂP/AJ/AZ-80 TC514258ÂP/AJ/AZ-10 T ENTATIVE D A T A 2 6 2 ,1 4 4 W O R D x 4 BIT D Y N A M IC R A M DESCRIPTION The TC514258AP/AJ/AZ is the new generation dynamic RAM organized 262,144 words by 4 bits. The TC514258AP/AJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as advanced
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TC514258AP/AJ/AZ-7Û
TG514258
P/AJ/AZ-80
TC514258
P/AJ/AZ-10
TC514258AP/AJ/AZ
TC514258AP/AJ/AZ-70,
TG514258AP/AJ/AZ-80
TC514258A
7g rac
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ZEN114
Abstract: No abstract text available
Text: Zener Regulator Diodes Part Number ZEN 1N1589 1N1589A 1N1590 1N1590A 1N1591 1N1591A 1N1592 1N1592A 1N1593 1N1593A 1N1594 1N1594A 1N1595 1N1595A 1N1596 1N1596A 1N1597 1N1597A 1N1598 1N1598A 1N5333A 1N5333B 1N6632 SMBG5333B SMBJ5333B 1N5334A 1N5334B 1N6633 SMBG5334B
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STD50
ZEN-114
ZEN114
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1N6640US
Abstract: No abstract text available
Text: 1N6639US THRU 1N6641 US AVAILABLE IN JAN, JANTX, JANTXV AND JANS 1N6639US PER MIL-PRF-19500/609 1N6640US SWITCHING DIODES 1N6641US NON-CAVITY GLASS PACKAGE METALLURGiCALLY BONDED MAXIMUM RATINGS Operating Temperature: -65°C to +175°C Storage Temperature: -65°C to +175°C
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1N6639US
1N6641
MIL-PRF-19500/609
1N6640US
1N6641US
IN6639US
IN6641US
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MC2259
Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Text: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the
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G11-1600
Abstract: RA50V 1m5624 VR200 D0-204AP
Text: GLASS PASSIVATED RECTIFIERS Part numbering system for all parts excluding JEDEC registered, PRO ELECTRON and industry standard parts. AO XV • 777 A = Type Designator C = GJamper D = Damper R = fiecovery “Blank" = Standard Y = Reverse Voltage A = 50V B = 100V
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Amps/40
1N4245
1N4249
D0-204AP
1N4942*
1N4948*
1N5059
1N5G62
00-204AP
1N5614
G11-1600
RA50V
1m5624
VR200
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Untitled
Abstract: No abstract text available
Text: 1N5614 THRU 1N5622 MINIATURE GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER Voltage - 200 to 1000 Volts C u rren t- 1.0. Am pere FEATURES ♦ High temperature metallurgically bonded con structed rectifiers ♦ 1.0 Ampere operation at T a = 55°C with
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1N5614
1N5622
MIL-S-19500
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1NS619
Abstract: 1NS617
Text: 1N5615 THRU 1N5623 MINIATURE GLASS PASSIVATED JUNCTION FAST SWITCHING RECTIFIER Voltage - 200 to 1000 Volts Current- 1.0 Ampere FEATURES ♦ High temperature metallurgical^ bonded constructed rectifiers ♦ Glass passivated cavity-free junction in a D0-204AP package
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1N5615
1N5623
D0-204AP
MIL-S-19500
100ns.
1NS619
1NS617
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1NS616
Abstract: No abstract text available
Text: 1N5614THRU 1N5622 GLASS PASSIVATED MEDIUM-SWITCHING JUNCTION RECTIFIER Reverse Voltage - 200 to 1000 Volts _ FEATURES_ 00-204AP I-I Forward Current - 1.0. Ampere ♦ High temperature metallurgical^ bonded construction ♦ 1.0 Ampere operation
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1N5614THRU
1N5622
00-204AP
MIL-S-19500
D0-204AP
1NS614THRU
1NS616
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Untitled
Abstract: No abstract text available
Text: 1N5615THRU 1N5623 GLASS PASSIVATED FAST SWITCHING RECTIFIER R everse Voltage - 200 to 1000 Volts Forw ard C urrent - 1.0 Am pere_ FEATURES DO-2Q4AP / ♦ High temperature metallurgically bonded construction ♦ Hermetically sealed case ♦ Glass passivated cavity-free junction
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1N5615THRU
1N5623
MIL-S-19500
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JAN1N5620
Abstract: No abstract text available
Text: POWER SEMICONDUCTOR DIVISION IN s t â » JAN AND JANTX 1N5614 THRU 1N5622 GLASS PASSIVATED JUNCTION MEDIUM- SWITCHING RECTIFIER VOLTAGE - 200 to 1000 Volts T 1.0 0 2 5.4 0 MA 1 .110 (2.73) .065 (1.65) ♦ Qualified to MIL-S-19500/427C ♦ High temperature metallurgical^
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1N5614
1N5622
MIL-STD202,
MIL-S-19500/427C
JAN1N5620
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1N5631
Abstract: 1N5637A SEMICON
Text: 1500 WATT TRANSIENT VOLTAGE SUPPRESSOR DIODES 5.50V to 171V DO 13 CASE DESCRIPTION FEATURES: . a high quality hermetically sealed suppressorforuse in military and commercial applications where large voltage transients can permanently damage voltage sensitive components.
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dev103
1N6036
MIL-S-19500/434
1N5631
1N5637A SEMICON
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SKP33A
Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
Text: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi
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DO-13
5SE10
5SE10A
5SE11
5SE12
5SE13
5SE13A
5SE16A
5SE18
5SE18A
SKP33A
P8KE27A
PSKE12A
IN504
IN5646
P6KE0.1a
P8KE
P8KE24
F6KE39A
IN5646A
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ci tr 2108
Abstract: 1n5603 jan 1n5603
Text: JAN IN5597 JAN 1N5600 JAN IN5603 RECTIFIER ASSEMBLIES High Voltage Stacks, lA m p to 5 Amp, Military Approved DESCRIPTION This series o f m ilita ry high-voltage highc u rre n t stacks offers th e u tm o st in FEATURES • Q ualified to MIL-S-19500/404A • PIV: to lOkV
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MIL-S-19500/404A
IN5597
1N5600
IN5603
1N55S7
1N5S00
1NS603
1N5597
1N5600
1N5603
ci tr 2108
1n5603
jan 1n5603
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