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onsemi NTMT061N60S5F SUPERFET5 FRFET, 61MOHM, PQFN88
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTMT061N60S5F	Cut Tape	2,789		1	1 $9.27 10 $6.366 100 $4.7184 1000 $4.29962 10000 $4.29962	Buy Now
	NTMT061N60S5F	Digi-Reel			1	1 $9.27 10 $6.366 100 $4.7184 1000 $4.29962 10000 $4.29962	Buy Now
	NTMT061N60S5F	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $4.29963	Buy Now
Avnet Americas	NTMT061N60S5F	Reel		4 Weeks	73	1 $5.0912 10 $5.0912 100 $5.0912 1000 $5.0912 10000 $5.0912	Buy Now
	NTMT061N60S5F	Reel		22 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 $3.74067	Buy Now
Mouser Electronics	NTMT061N60S5F		2,980			1 $8.71 10 $6.37 100 $4.72 1000 $4.3 10000 $4.29	Buy Now
Newark	NTMT061N60S5F	Reel			3,000	1 - 10 - 100 - 1000 - 10000 $4.82	Buy Now
Rochester Electronics	NTMT061N60S5F		46,876		1	1 $5.02 10 $5.02 100 $4.72 1000 $4.26 10000 $4.26	Buy Now

Ameya Holding Limited	NTMT061N60S5F		3,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Richardson RFPD	NTMT061N60S5F				3,000	1 - 10 - 100 - 1000 - 10000 $4.3	Buy Now
Avnet Silica	NTMT061N60S5F			23 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	NTMT061N60S5F		2,900			1 $27.8 10 $27.8 100 $11.6 1000 $7.93 10000 $7.93	Buy Now
EBV Elektronik	NTMT061N60S5F			16 Weeks	3,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Wuhan P&S	NTMT061N60S5F		2,900		1	1 $12 10 $12 100 $7.66 1000 $5.81 10000 $5.81	Buy Now
onsemi NTHL041N60S5H NTHL041N60S5H
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTHL041N60S5H	Tube	848		1	1 $10.76 10 $7.562 100 $6.622 1000 $5.35137 10000 $5.35137	Buy Now
Avnet Americas	NTHL041N60S5H	Tube		4 Weeks	59	1 $6.3344 10 $6.3344 100 $6.3344 1000 $6.3344 10000 $6.3344	Buy Now
	NTHL041N60S5H	Tube		22 Weeks	450	1 - 10 - 100 - 1000 $5.2089 10000 $5.2089	Buy Now
Mouser Electronics	NTHL041N60S5H		999			1 $8.65 10 $8 100 $6.66 1000 $5.62 10000 $5.62	Buy Now
Newark	NTHL041N60S5H	Bulk	431		1	1 $9.99 10 $9.13 100 $7.29 1000 $6.51 10000 $6.51	Buy Now
Rochester Electronics	NTHL041N60S5H		36,900		1	1 $6.24 10 $6.24 100 $5.87 1000 $5.31 10000 $5.31	Buy Now

TME	NTHL041N60S5H		182		1	1 $9.63 10 $8.3 100 $7.46 1000 $7.27 10000 $7.27	Buy Now
Richardson RFPD	NTHL041N60S5H				450	1 - 10 - 100 - 1000 $5.35 10000 $5.35	Buy Now
Avnet Asia	NTHL041N60S5H			22 Weeks	450	1 - 10 - 100 - 1000 $5.55987 10000 $5.28531	Buy Now
Avnet Silica	NTHL041N60S5H		60	23 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	NTHL041N60S5H		180			1 $6.48 10 $6.07 100 $6.07 1000 $6.07 10000 $6.07	Buy Now
	NTHL041N60S5H		75			1 $33.3 10 $33.3 100 $33.3 1000 $33.3 10000 $33.3	Buy Now
EBV Elektronik	NTHL041N60S5H			16 Weeks	30	1 - 10 - 100 - 1000 - 10000 -	Buy Now
New Advantage Corporation	NTHL041N60S5H		194		1	1 - 10 - 100 $8.98 1000 $8.31 10000 $8.31	Buy Now
Wuhan P&S	NTHL041N60S5H		75		1	1 $14.93 10 $14.93 100 $9.53 1000 $7.23 10000 $7.23	Buy Now
onsemi FKN1N60SA TRIAC SENS GATE 600V 1A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FKN1N60SA	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	FKN1N60SA	Bulk		4 Weeks	2,290	1 - 10 - 100 - 1000 - 10000 $0.15288	Buy Now
Rochester Electronics LLC FKN1N60SA TRIAC SENS GATE 600V 1A TO92-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FKN1N60SA	Bulk			1,902	1 - 10 - 100 - 1000 - 10000 $0.16	Buy Now
Rochester Electronics LLC SPW11N60S5 N-CHANNEL POWER MOSFET
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SPW11N60S5	Bulk			160	1 - 10 - 100 - 1000 $1.88 10000 $1.88	Buy Now

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1N60S Datasheets (4)

Part	Manufacturer	Description	Type	PDF
1N60S	CEIEC	Rectifier Diode, Single, 45V, DO-7, 2-Pin	Scan	PDF
1N60S	Honey Technology	Point Contact Germanium Diode	Scan	PDF
1N60S	Korea Electronics	RECTIFIER DIODE,45V V(RRM),DO-7	Scan	PDF
1N60S	Unknown	Shortform Semicon, Diode, and SCR Datasheets	Short Form	PDF

1N60S Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
1N60 diode Abstract: germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent Text: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC	Original	PDF	1N60P, 1N60S 40MHz 1N60 diode germanium point contact diode point contact diode 1N60 diode date sheet 1N60P diode 1n60 germanium diodes "Point Contact Diode" germanium diode germanium diode equivalent
1N60P Abstract: ST60P 1N60S 20PF Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE Characteristics equivalent to Max. 0.5 1.9 max 3.9 max 1N60P and 1N60S Black Cathode Band Black Part No. Black "ST" Brand 4.5± 1.0 R5 max Min. 27.5 Max. 1.9 10.0± 1.0 XXX Max. 3.9 ST 1.0 max Min. 27.5 Glass case DO-35-1	Original	PDF	ST60P, ST60S 1N60P 1N60S DO-35-1 DO-35 ST60P ST60P 1N60S 20PF
1N60P Abstract: diode sod-123 marking code FN Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS	Original	PDF	1N60PW, 1N60SW 1N60PW: 1N60SW: OD-123 OD-123 1N60P diode sod-123 marking code FN
1N60P Abstract: 20PF Text: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current	Original	PDF	1N60PW, 1N60SW OD-123 1N60P 20PF
ST60P Abstract: 20pf 1N60P 1N60S Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm	Original	PDF	ST60P, ST60S 1N60P 1N60S DO-35-1 40MHz ST60P ST60P 20pf
1N60P Abstract: 20PF Text: 1N60PW, 1N60SW Gold Wire Bonding Diode FEATURES • High Voltage • Low Forward Voltage APPLICATIONS • For electronic calculator, etc. Absolute Maximum Ratings Ta = 25oC Symbol Value Unit Peak Reverse Voltage VRM 60 V Reverse Voltage dc VR 20 V Peak Forward Current	Original	PDF	1N60PW, 1N60SW OD-123 1N60P 20PF
ST60P Abstract: 20pf 1N60P 1N60S Text: ST60P, ST60S SILICON SCHOTTKY BARRIER DIODE 1.9 max 3.9 max Characteristics equivalent to or better than 1N60P and 1N60S ideal for used in detection or for switching on the 4.5± 1.0 R5 max radio, TV, etc. 10.0± 1.0 1.0 max Glass case DO-35-1 Dimensions in mm	Original	PDF	ST60P, ST60S 1N60P 1N60S DO-35-1 40MHz ST60P ST60P 20pf
1N60P Abstract: diode sod-123 marking code 26 Text: 1N60PW, 1N60SW Schottky Barrier Diode PINNING FEATURES PIN DESCRIPTION 1 Cathode 2 Anode • High reliability • Low forward voltage and reverse current 1 2 FM Top View Marking Code: 1N60PW: "FM" 1N60SW: "FN" Simplified outline SOD-123 and symbol APPLICATIONS	Original	PDF	1N60PW, 1N60SW 1N60PW: 1N60SW: OD-123 OD-123 1N60P diode sod-123 marking code 26
Semtech 1n60 Abstract: point contact diode "Point Contact Diode" germanium diode 1N60 1N60 diode 1N60P diode 1n60 germanium diode junction capacitance 1N60 germanium diode 1N60 Text: 1N60P, 1N60S POINT CONTACT GERMANIUM DIODES 1N60 is a point contact diode employing N-from Germanium and gives an efficient and excellent linearity when used in TV image detection, FM detection, radio, AM detection, etc. Absolute Maximum Ratings Ta = 25oC	Original	PDF	1N60P, 1N60S 40MHz Semtech 1n60 point contact diode "Point Contact Diode" germanium diode 1N60 1N60 diode 1N60P diode 1n60 germanium diode junction capacitance 1N60 germanium diode 1N60
3VD156600YL Abstract: 1N60SS Text: 3VD156600YL 3VD156600YL 高压MOSFET芯片描述 ¾ 3VD156600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 1 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；	Original	PDF	3VD156600YL 3VD156600YL 3VD156600YLN 600VMOS O-92DT-3L 1N60SS 250uA 250uAVDS 30VVDS 600VVGS 1N60SS
Untitled Abstract: No abstract text available Text: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.	Original	PDF	3VD156600YL 3VD156600YL O-92DT-3L 1N60SS.
bzv40 Abstract: bzd10 BZX98 bzw22 BZW22/C3V3 BZX97 201 Zener diode C200 1N6073 1N6074 Text: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 10 0 150 50 100 150 50 3 .0 3 .0 3 .0 6 .0 6 .0 6 .0 1 2 .0 2 .0 4 2 .0 4 2 .0 4 1 .7 6 1 .7 6 1 .7 6 1 .5 0 1.0 1.0 1.0 5 .0 5 .0 5 .0 1 0 .0 1N6080 1N60S1	OCR Scan	PDF	1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 1N6080 1N6081 1N6082 bzv40 bzd10 BZX98 bzw22 BZW22/C3V3 BZX97 201 Zener diode C200
IC HXJ 2038 Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF
bzd10 Abstract: bzv40 bzx97 bzx98 BZW22 N6075 1N6073 1N6074 1N6075 1N6076 Text: Type No. PIW to 25°C VF IR Volts Amps Volts kA t RR Device Package MICROSEMI Recommended Substitute n sec. 1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 50 100 15 0 50 100 150 50 3.0 3.0 3.0 6.0 6.0 6.0 12.0 2.04 2.04 2.04 1.76 1.76 1.76 1.50 1.0 1.0	OCR Scan	PDF	1N6073 1N6074 1N6075 1N6076 1N6077 1N6078 1N6079 1N6080 1N6081 1N6082 bzd10 bzv40 bzx97 bzx98 BZW22 N6075

Untitled Abstract: No abstract text available Text: NEW ENGLAND SEMICONDUCTOR 1N6036A thru 1N6072A 1500 WATT SILICON BIPOLAR TRANSIENT SUPPRESSOR DIODES The NES 1N6036A to 1N6072A series o f Bipolar Silicon Voltage Transient Suppressor diodes are designed for use in AC circuits where large voltage transients	OCR Scan	PDF	1N6036A 1N6072A 1N6036A 1N6072A
Untitled Abstract: No abstract text available Text: GENL IN S TR / 5bE POlilER General ^ ^ Semiconductor ^ • Industries, Inc. 30Tni37 T-J/-23 THRU MECHANICAL CHARACTERISTICS DESCRIPTION • Body marked w ith Logo «J* and type number ELECTRICAL CHARACTERISTICS Clamping Factor 1.33 at full rated power 1.20 at 50% rated power	OCR Scan	PDF	30Tni37 T-J/-23 0GD4111 1N6036 1N6072A MIL-S-19500/507 1N6072A)
1NU7 Abstract: 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2 Text: 386 9 7 2 0 GENERAL ~fiï 86D 0 0 3 1 7 DIODE CORP Ï Ë 3öbT?2Q 0D00317 h LE A D M O U N T ED SILICO N POW ER RECTIFIERS P' TYPE y \ % D t -° -a cont'd \ \ r1' \| t IH > % 'S 1, •e 25 @ 25 1@ 25 25 @ 25 > 1@ 25 IN 599 1N599A 1N600 1N600A Oo-l Do-1 Oo-l	OCR Scan	PDF	DDD0317 1N599 1N599A 1N600A 1N602 1N602A 1N603 1NS03A 1N604 1N604A 1NU7 1N2487 1N1492 1N2508 IN400T 1N1711 equivalent to 1N4001 1N1490 1N2484 1N20B2
Untitled Abstract: No abstract text available Text: 1500 WATT BI-POLAR TRANSIENT VOLTAGE 1N6036 THRU 1N6072 SUPPRESSOR DIODES DO-13 CASE FEATURES: 5.5 thru 185 Volts The 1N6036 Series of voltage transient suppressor di odes are designed to protect electronic equipment from failure due to voltage transients. Their avalanche charac-	OCR Scan	PDF	1N6036 1N6072 DO-13 Mil-S-19500/507
LG color tv Circuit Diagram schematics Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007 Text: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY	OCR Scan	PDF	3186J LG color tv Circuit Diagram schematics free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
hep 154 silicon diode Abstract: zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp Text: SEMICONDUCTOR This guide has been prepared by the Motorola HEP technical staff to provide a cross-reference for the Hobbyist, Experimenter, and Profes sional service technician. The information contained herein is based on an analysis of the published specifications of each device listed. This	OCR Scan	PDF	MY110B Z0206 Z0208 Z0210 Z0211 Z0212 Z0214 Z0215 Z0217 Z0219 hep 154 silicon diode zy 406 transistor motorola HEP 801 hep 154 diode hep R1751 triac zd 607 2sb337 RS5743.3 F82Z hep 230 pnp
1N6033 Abstract: 1N6066A Text: jcmltronicr discrete devices SEMICONDUCTORS Semitronics Corp. transient suppressors 1.5 KW DO-13 metal case bi-polar JEOEC nn NUMBER : 20 Reverse Stand-Off Voltage VR Volts Breakdown Voltage @ Maximum Clamping Voltage Maximum Reverse Leakage @ vR Maximum	OCR Scan	PDF	DO-13 1N6036 1N6036A 1N6037A 1N6038 1N6038A 1N6033 1N6039A 1N6Q40 1N6040A 1N6066A
SKP33A Abstract: P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A Text: discrete jGmitronicr hot line fO L L FREE NUMBER 800-777-3960 1500 Watts peak d e v ic e s Metal Case and Epoxy Molded. Silicon Voltage Transient Suppressor Diodes DO-13 METAL MOLDED CASE Reverse Stand Off Voltage Breakdown Voltage Maximum Maximum A*Available as bi	OCR Scan	PDF	DO-13 5SE10 5SE10A 5SE11 5SE12 5SE13 5SE13A 5SE16A 5SE18 5SE18A SKP33A P8KE27A PSKE12A IN504 IN5646 P6KE0.1a P8KE P8KE24 F6KE39A IN5646A
thyristor t 558 f Abstract: No abstract text available Text: T ra n s ie n t V o lta ge S u p p re s s io n TV S D io d e s + 1 N6 Q3 6 - 1N6072A + Series C3Y30M Control overpower h m sib ia Protection MAXIMUM RATINGS When no problems exist, Oydom TVS • Peak pulse power (Ppk): Diodes are totally invisible to the circuits	OCR Scan	PDF	1N6072A C3Y30M 10X1000 1N60SEFJE5 300pcs) 1000pcs) thyristor t 558 f
1N60S5 Abstract: 1.2V zener diodes Text: K n o x S e m ic o n d u c t o r , in c . These low level zener diodes are designed for use at low current levels. They feature sharp knees, low leakage, low impedance, and low noise. The devices are available in the DO-7 glass package and in die form. LOW VOLTAGE AVALANCHE ZENER DIODES	OCR Scan	PDF	1N6082 1N6091 LVA343A LVA3100A 1N6083 1N6084 1N60S5 1N6086 1N6087 1.2V zener diodes

1N60S Search Results

1N60S Price and Stock

onsemi NTMT061N60S5F

onsemi NTHL041N60S5H

onsemi FKN1N60SA

Rochester Electronics LLC FKN1N60SA

Rochester Electronics LLC SPW11N60S5

1N60S Datasheets (4)

1N60S Datasheets Context Search

1N60 diode

1N60P

1N60P

1N60P

ST60P

1N60P

ST60P

1N60P

Semtech 1n60

3VD156600YL

Untitled

bzv40

IC HXJ 2038

bzd10

Untitled

Untitled

1NU7

Untitled

LG color tv Circuit Diagram schematics

hep 154 silicon diode

1N6033

SKP33A

thyristor t 558 f

1N60S5