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Catalog Datasheet	Type	Document Tags	PDF
3VD156600YL Abstract: 1N60SS Contextual Info: 3VD156600YL 3VD156600YL 高压MOSFET芯片描述 ¾ 3VD156600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 1 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；	Original	3VD156600YL 3VD156600YL 3VD156600YLN 600VMOS O-92DT-3L 1N60SS 250uA 250uAVDS 30VVDS 600VVGS 1N60SS	PDF
Contextual Info: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.	Original	3VD156600YL 3VD156600YL O-92DT-3L 1N60SS.	PDF

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3VD156600YL

Abstract: 1N60SS
Contextual Info: 3VD156600YL 3VD156600YL 高压MOSFET芯片描述 ¾ 3VD156600YL为采用硅外延工艺制造的N沟道增强型600V高压MOS功率场效应晶体管； ¾ 先进的高压分压终止环结构； 1 ¾ 较高的雪崩能量； 3 ¾ 漏源二极管恢复时间快；

Original

3VD156600YL 3VD156600YL 3VD156600YLN 600VMOS O-92DT-3L 1N60SS 250uA 250uAVDS 30VVDS 600VVGS 1N60SS

PDF

Contextual Info: 3VD156600YL 3VD156600YL HIGH VOLTAGE MOSFET CHIPS DESCRIPTION ¾ 3VD156600YL is a High voltage N-Channel enhancement mode power MOS-FET chip fabricated in advanced silicon epitaxial planar technology. ¾ Advanced termination scheme to provide enhanced voltage-blocking capability.

Original

3VD156600YL 3VD156600YL O-92DT-3L 1N60SS.

PDF