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    JRH Electronics 805-061-16M13-31AD412

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    DigiKey 805-061-16M13-31AD412 1
    • 1 $2158.03
    • 10 $2158.03
    • 100 $1899.0668
    • 1000 $1899.0668
    • 10000 $1899.0668
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    JRH Electronics 805-061-16M13-31AD416

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    DigiKey 805-061-16M13-31AD416 1
    • 1 $2158.03
    • 10 $2158.03
    • 100 $1899.0668
    • 1000 $1899.0668
    • 10000 $1899.0668
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    JRH Electronics 805-061-16M13-31AD414

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    DigiKey 805-061-16M13-31AD414 1
    • 1 $2158.03
    • 10 $2158.03
    • 100 $1899.0668
    • 1000 $1899.0668
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    JRH Electronics 805-061-16M13-31AD413

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    DigiKey 805-061-16M13-31AD413 1
    • 1 $2158.03
    • 10 $2158.03
    • 100 $1899.0668
    • 1000 $1899.0668
    • 10000 $1899.0668
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    JRH Electronics 805-061-16NF13-31AD417

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    DigiKey 805-061-16NF13-31AD417 1
    • 1 $2158.03
    • 10 $2158.03
    • 100 $1899.0668
    • 1000 $1899.0668
    • 10000 $1899.0668
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    1AD41 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    bcm 4330

    Abstract: telemecanique contactor catalogue A5 GNC mosfet philips ecg master replacement guide Elektronikon II keltron electrolytic capacitors PART NO SELEMA DRIVER MOTOR AC 12v dc EIM Basic MK3 lenze 8600 Atlas copco rc universal 60 min
    Text: NEED IT NOW? BUY REMAN! SEE PAGE lxx xx xvi SOLUTIONS, SOLUTIONS. Q A r e q u a l i t y, c o s t , a n d t i m e i m p o r t a n t to you? A ELECTRICAL SOUTH! Q Do you spend too much of your valuable time dealing with too m a n y d i ff e r e n t r e p a i r v e n d o r s ?


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    HY5116100B

    Abstract: No abstract text available
    Text: HY5116100B Series -HYUNDAI 16Mx 1-bit CMOS DRAM DESCRIPTION The HY5116100B is the new generation and fast dynamic RAM organized 16,777,216 x 1-bit. TheHY5116100B utilizes Hyundai’s C M O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5116100B TheHY5116100B 1AD41-00-MAY9S 4b750Ã 0GG435b HY5116100BJ HY5116100BSLJ

    HY5116100B

    Abstract: 10k52 1AD41-00-MAY95 1AD41
    Text: -HYUNDAI HY5116100B Series 16Mx 1-bit CMOS DRAM DESCRIPTION The H Y5116100B is the new generation and fast dynam ic RAM organized 16,777,216 x 1-bit. T he H Y 5116100B utilizes Hyundai's CM O S silicon gate process technology as well as advanced circuit techniques to provide wide


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    PDF HY5116100B Y5116100B 5116100B 1AD41-00-MAY95 HY5116100BJ HY5116100BSLJ HY5116100BT HY5116100BSLT 10k52 1AD41-00-MAY95 1AD41

    SC11066

    Abstract: No abstract text available
    Text: SC11066/SC11077/SC11088 9600 bps Facsimile Modem DSPs o SIERRA SEMICONDUCTOR □ □ 1 P IN PLC C PA CK A G E L ow P ow er • S in g le su p p ly + 5 V ± 1 0 % • 2 00m w typical op eratin g • 6 0m w (typical) stand by Fax M o d es • V .29, V .27ter, V.21 C h ann el 2


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    PDF SC11066/SC11077/SC11088 27ter, SC11066

    SK0611

    Abstract: sc11198 SC11198CV scrambler v.27 b 201 s B201S
    Text: SIERR A S E M I C O N D U C T O R CORP S4E D • 6 2 4 2 0 1 0 0 0 D E 2 4 4 43^ " T - ^ r Z FEATURES Low Power • Single supply +5V ± 10% • 200mw typical operating • 60mw (typical) standby excluding SC I 1198 □ Fax Modes •V.29, V.27ter, V.21 Channel 2


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    PDF 200mw 27ter, RS232C SK0611 sc11198 SC11198CV scrambler v.27 b 201 s B201S

    R96FAX

    Abstract: No abstract text available
    Text: MODEM PRODUCTS DATA BOOK <1 Rockwell International Semiconductor Products Division Rockwell International Corporation 1987 All Rights Reserved Printed in U.S.A. Order No. 1 February, 1987 Rockwell Sem iconductor Products Division is headquartered in Newport Beach, California with Field


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    HY5116100B

    Abstract: 1AD41-00-MAY95 HY5116100
    Text: ' • H Y U N D A H Y 5 1 1 6 1 0 0 B S e r ie s 16Mx 1-bit CMOS DRAM I DESCRIPTION The H Y 5116100B is the new generation and fast dynam ic R A M organized 16,777,216 x 1-bit. T h e H Y 5 1 1 6 1 0 0 B utilizes H yundai’s C M O S silicon gate process technology a s well a s advanced circuit techniques to provide w ide


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    PDF HY5116100B 16Mx1 HY5116100Bis TheHY5116100B 4b750Ã 300435b 1AD41-00-MAY9S HY5116100BJ 1AD41-00-MAY95 HY5116100