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    1AS TRANSISTOR Search Results

    1AS TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
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    1AS TRANSISTOR Price and Stock

    Essentra Components HTRTC-1A

    Transistor in)sulator - White, PBT, 4, Operating Temperature Range -30 - 130 °C (-22 - 266 °F)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com HTRTC-1A 916
    • 1 -
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    • 100 -
    • 1000 $0.2353
    • 10000 $0.2127
    		Buy Now

    1AS TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    C1741

    Abstract: Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC
    Text: NPN Silicon AF Transistors BC 846 . BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 PNP


    Original     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 C1741 Q62702-C1741 bc847 1Bs sot-23 BC850 C1885 bc 846 marking 848 bc 580 BC848BC

    1bs sot323

    Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W

    MARKING CODE 21E SOT23

    Abstract: BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23
    Text: BC846.BC850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC856, BC857, BC858 BC859, BC860 PNP


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 VPS05161 BC846A BC846B MARKING CODE 21E SOT23 BC847C E6433 NPN BC846B SOT23 BC846B E6327 power 22E 1FS SOT23 marking CODE 1BS 1Gs SOT23 DIN 6784 MV SOT23

    BC857

    Abstract: BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC857 BC858 BC859 BC860 BC846 BC846A BC846B BC847A BC850 BC856

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW

    1Bs sot-23

    Abstract: sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30
    Text: BC 846 . BC 850 NPN Silicon AF Transistors • For AF input stages and driver applications • High current gain 3 • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856, BC 857, BC 858 BC 859, BC 860 PNP


    Original     		PDF OT-23 Nov-11-1999 120Hz 1Bs sot-23 sot-23 marking 1Fs 849B 1gs SOT-23 847C 848B 849C 850C SOT-23 marking 2Gs VC30

    transistors BC 848

    Abstract: VSO05561 21E sot
    Text: BC 846W . BC 850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: BC 856W, BC 857W, BC 858W 2


    Original     		PDF VSO05561 846AW OT-323 846BW 847AW 847BW 847CW transistors BC 848 VSO05561 21E sot

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859

    BC8488

    Abstract: BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 BC846A BC846B BC847A BC8488 BC846 BC846A BC846B BC847A BC850 BC856 BC857 BC858 BC859

    BC846AT

    Abstract: BC846BT BC846T BC847AT BC847BT BC850T BC856T BC857T BC858T BC859T
    Text: BC846T.BC850T NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC850T 1


    Original     		PDF BC846T. BC850T BC856T, BC857T, BC858T, BC859T, BC846AT BC846BT BC847AT BC846AT BC846BT BC846T BC847AT BC847BT BC850T BC856T BC857T BC858T BC859T

    BC8488

    Abstract: H12E BC848 equivalent 1bs sot323
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW BC846BW BC8488 H12E BC848 equivalent 1bs sot323

    BC846AT

    Abstract: BC846BT BC846T BC847AT BC850T BC856T BC857T BC858T BC859T BC860T
    Text: BC846T.BC850T NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC860T 1


    Original     		PDF BC846T. BC850T BC856T, BC857T, BC858T, BC859T, BC860T BC846AT BC846BT BC847AT BC846AT BC846BT BC846T BC847AT BC850T BC856T BC857T BC858T BC859T BC860T

    BC8488

    Abstract: BC846 Infineon BC850C INFINEON
    Text: BC846.BC850 NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: BC856, BC857, BC858 BC859, BC860 PNP 2 1 Type


    Original     		PDF BC846. BC850 BC856, BC857, BC858 BC859, BC860 VPS05161 BC846A BC846B BC8488 BC846 Infineon BC850C INFINEON

    BC848T

    Abstract: CB-502 BC849CT 849T BC858T BC846T
    Text: BC846T.BC850T NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC850T 1


    Original     		PDF BC846T. BC850T BC856T, BC857T, BC858T, BC859T, VPS05996 BC846AT BC846BT BC848T CB-502 BC849CT 849T BC858T BC846T

    Untitled

    Abstract: No abstract text available
    Text: BC846T.BC850T NPN Silicon AF Transistors  For AF input stages and driver applications  High current gain 3  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz Complementary types: BC856T, BC857T, 2 BC858T, BC859T, BC860T 1


    Original     		PDF BC846T. BC850T BC856T, BC857T, BC858T, BC859T, BC860T VPS05996 BC846AT BC846BT

    2SC2995Y

    Abstract: No abstract text available
    Text: TOSHIBA 2SC2995 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE PCT PROCESS ? < ; r 7 Q Q <5 Unit in mm F M / A M RF, M IX , OSC, IF HIGH FREQUENCY AMPLIFIER APPLICATIONS. 4.2MAX. • • High stability Oscillation Voltage On FM Local Oscillator. Recommend FM /AM RF, MIX, OSC and IF.


    OCR Scan     		PDF 2SC2995 55MAX. 200MHz 2SC2995Y

    sot-23 MARKING CODE 1Gs

    Abstract: bc 846 BC850 BC846
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


    OCR Scan     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 sot-23 MARKING CODE 1Gs bc 846 BC850 BC846

    F21E

    Abstract: transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857,


    OCR Scan     		PDF Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 F21E transistors BC 848 ic 846 l transistors BC 183 Bc 188 pnp

    BC848

    Abstract: BC847
    Text: SIEMENS NPN Silicon AF Transistors BC 846 . BC 850 Features • • • • • For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC857,


    OCR Scan     		PDF BC857, Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 BC848 BC847

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PowerMOS transistors PHP7N40E, PHB7N40E Avalanche energy rated_ FEATURES • • • • • SYMBOL QUICK REFERENCE DATA d Repetitive Avalanche Rated Fast switching Stable off-state characteristics


    OCR Scan     		PDF PHP7N40E, PHB7N40E PHP7N40E PHB7N40E

    BUK446

    Abstract: BUK446-1000A BUK446-1000B bu 508
    Text: N AMER PHILIPS/DISCRETE 2SE D bbS3 1 3 1 Q02042S 0 WÊ PowerMOS transistor BUK446-1000A BUK446-1000B r - 3 cf ‘ 0 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in


    OCR Scan     		PDF T-37-Ã BUK446 -1000A -1000B BUK446-1000A BUK446-1000B bu 508

    IRFPO44

    Abstract: IRFP045 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90
    Text: HE D I 4ÛSS4S2 aGdâ71E Data Sheet No. PD-9.583A 5 | INTERNATIONAL R E C T I F I E R INTERNATIONAL RECTIFIER X R REPETITIVE AVALANCHE AND dv/dt RATED 175°C OPERATING TEMPERATURE IRFPÜ44 IRFPQ45 HEXFET TRANSISTORS N-CHANNEL 60 Volt, 0.028 Ohm HEXFET TO-247AC TO-3P Plastic Package


    OCR Scan     		PDF O-247AC C-467 IRFP044, IRFP045 T-39-15 C-468 IRFPO44 IRFP044 diode sy 171 C466 irfpu44 C463 T-39 LG 57A RNC 90

    Untitled

    Abstract: No abstract text available
    Text: G E SOLID STATE 01 D E l 3675081 0014b43 T r r - S _ IB _ m 3 " 2 Arrays CA3127 High-Frequency N-P-N Transistor Array For Low-Power Applications at Frequencies up to 500 MHz Features:


    OCR Scan     		PDF 0014b43 CA3127 CA-CA3127* CA3127 100-MHz

    11H19

    Abstract: B307
    Text: 1DI75E-120 75a •’ Outline Drawings POWER TRANSISTOR MODULE : F e a tu re s • SW Œ High Voltage • 7 U —sjî'f K rtJR • A S O à 'lS l' • flêäüffi Including Free W heeling Diode Excellent Safe Operating Area Insulated Type If fliÊ : A p p lic a tio n s


    OCR Scan     		PDF 1DI75E-120 11H19^ l95t/R89 11H19 B307