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    BC860W Price and Stock

    Infineon Technologies AG BC860W H6327

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    Bristol Electronics BC860W H6327 3,000
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    BC860W Datasheets (12)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    BC860W Diotec Surface mount Si-Epitaxial PlanarTransistors Original PDF
    BC860W Infineon Technologies NPN Silicon AF Transistors Original PDF
    BC860W Infineon Technologies PNP Silicon AF Transistors Original PDF
    BC860W Kexin PNP General Purpose Transistor Original PDF
    BC860W NXP Semiconductors PNP general purpose transistors Original PDF
    BC860W Philips Semiconductors PNP General Purpose Transistor Original PDF
    BC860W Philips Semiconductors PNP General Purpose Transistor Original PDF
    BC860W Siemens Cross Reference Guide 1998 Original PDF
    BC860W Siemens RF-Transistors, MMICs, RF-Diodes, AF-Diodes, AF-Schottky Diodes and RF-Schottky Diodes Guide Original PDF
    BC860W Siemens PNP Silicon AF Transistors (For AF input stages and driver applications High current gain Low collector-emitter saturation voltage) Original PDF
    BC860W TY Semiconductor PNP General Purpose Transistor - SOT-323 Original PDF
    BC860WT/R Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    BC860W Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO -30 -50 V Collector-emitter voltage


    Original     		PDF BC859W BC860W BC859W BC859W; BC860W; BC859BW; BC860BW; BC859CW; BC860CW

    str 6707

    Abstract: datasheet str 6707 str 6707 datasheet UL 2092 2108 npn transistor BC859AW Q 817 SOT323 marking 4814 ic str 6707
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Jul 01 File under Discrete Semiconductors, SC04 1997 Sep 03 Philips Semiconductors Product specification PNP general purpose transistors


    Original     		PDF M3D187 BC859W; BC860W OT323 BC849W BC850W. SCA55 117047/00/03/pp12 str 6707 datasheet str 6707 str 6707 datasheet UL 2092 2108 npn transistor BC859AW Q 817 SOT323 marking 4814 ic str 6707

    1bs sot323

    Abstract: BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC8488 BC857W BC849CW BC858W BC859W BC860W VSO05561 BC846AW BC846BW

    BC846W

    Abstract: BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW OT323 BC846W BC847W BC848W BC849W BC850W BC856AW BC856BW BC856W BC857AW BC860W

    MARKING CODE 21E SOT323

    Abstract: sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon bc846bw
    Text: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW MARKING CODE 21E SOT323 sot323 marking code A.C marking 1Bs h11e BC8488 BC846 Infineon

    BC8488

    Abstract: H12E BC848 equivalent 1bs sot323
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW BC846BW BC8488 H12E BC848 equivalent 1bs sot323

    BC856BW

    Abstract: BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
    Text: BC856W~860W PNP Silicon Epitaxial Planar Transistor for general purpose and switching applications SOT-323 Plastic Package Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC856W BC857W BC858W BC859W BC860W -VCBO 80


    Original     		PDF BC856W OT-323 BC856W BC857W BC858W BC859W BC860W BC856BW BC856AW BC857W BC858W BC859W BC860AW BC860BW BC860W

    Untitled

    Abstract: No abstract text available
    Text: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW

    1bs sot323

    Abstract: BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W
    Text: BC846W.BC850W NPN Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846AW OT323 1bs sot323 BC846AW BC846BW BC846W BC847AW BC850W BC856W BC857W BC858W BC859W

    BC856CW

    Abstract: BC856BW BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
    Text: BC856W…BC860W PNP Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC856W BC857W BC858W BC859W BC860W -VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		PDF BC856W. BC860W BC856W BC857W BC858W BC859W BC856CW BC856BW BC856AW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W

    Untitled

    Abstract: No abstract text available
    Text: BC856W.BC860W PNP Silicon AF Transistors  For AF input stages and driver applications 3  High current gain  Low collector-emitter saturation voltage  Low noise between 30 Hz and 15 kHz  Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856AW BC856BW

    MARKING CODE 21E SOT323

    Abstract: sot323 marking code A.C BC8488
    Text: BC846W.BC850W NPN Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC856W, BC857W, BC858W 1 BC859W, BC860W PNP


    Original     		PDF BC846W. BC850W BC856W, BC857W, BC858W BC859W, BC860W VSO05561 BC846BW BC847BW MARKING CODE 21E SOT323 sot323 marking code A.C BC8488

    MARKING SMD 4G

    Abstract: kc860bw ie 420 smd marking BC860W MARKING SMD 4F
    Text: Transistors SMD Type PNP General Purpose Transistors KC860W BC860W Features Low current (max. 100 mA) Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO -50 V Collector-Emitter Voltage


    Original     		PDF KC860W BC860W) KC860W KC860BW KC860CW MARKING SMD 4G kc860bw ie 420 smd marking BC860W MARKING SMD 4F

    DIN 6784

    Abstract: MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W
    Text: BC856W.BC860W PNP Silicon AF Transistors • For AF input stages and driver applications 3 • High current gain • Low collector-emitter saturation voltage • Low noise between 30 Hz and 15 kHz • Complementary types: 2 BC846W, BC847W, BC848W 1 BC849W, BC850W NPN


    Original     		PDF BC856W. BC860W BC846W, BC847W, BC848W BC849W, BC850W VSO05561 BC856BW OT323 DIN 6784 MARKING 3FS BC857 st BC846W BC847W BC848W BC849W BC850W BC856BW BC856W

    BC856CW

    Abstract: BC856BW BC860AW BC856AW BC856W BC857W BC858W BC859W BC860BW BC860W
    Text: BC856W~BC860W PNP Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC856W BC857W BC858W BC859W BC860W -VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		PDF BC856W BC860W BC856W BC857W BC858W BC859W BC856CW BC856BW BC860AW BC856AW BC857W BC858W BC859W BC860BW BC860W

    BC856BW

    Abstract: BC860BW BC856AW BC856CW BC856W BC857W BC858W BC859W BC860AW BC860W
    Text: BC856W…BC860W PNP Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC856W BC857W BC858W BC859W BC860W -VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		PDF BC856W. BC860W BC856W BC857W BC858W BC859W BC856BW BC860BW BC856AW BC856CW BC856W BC857W BC858W BC859W BC860AW BC860W

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product data sheet Supersedes data of 1997 Sep 03 1999 Apr 12 NXP Semiconductors Product data sheet PNP general purpose transistors BC859W; BC860W PINNING FEATURES


    Original     		PDF M3D187 BC859W; BC860W OT323 BC849W BC850W. 115002/00/04/pp7

    4d SMD Transistor

    Abstract: 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR
    Text: Transistors IC SMD Type PNP General Purpose Transistor BC859W,BC860W Features Low current max. 100 mA . Low voltage (max. 45 V). 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Symbol BC859W BC860W Unit Collector-base voltage Parameter VCBO


    Original     		PDF BC859W BC860W BC859W BC859W; BC860W; BC859BW; BC860BW; BC859CW; BC860CW 4d SMD Transistor 4F smd transistor MARKING SMD 4G smd TRANSISTOR marking 4D SMD TRANSISTOR 4d smd transistor 4b SMD TRANSISTOR MARKING 4c transistor SMD 4h NF marking TRANSISTOR SMD MARKING SMD PNP TRANSISTOR

    marking 4d npn

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D187 BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 1999 Apr 12 Philips Semiconductors Product specification PNP general purpose transistors BC859W; BC860W


    Original     		PDF M3D187 BC859W; BC860W OT323 BC849W BC850W. SCA63 115002/00/04/pp8 marking 4d npn

    BC856AW

    Abstract: BC856BW BC856CW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W
    Text: BC856W…BC860W PNP Silicon Epitaxial Planar Transistor for general purpose and switching applications Absolute Maximum Ratings Ta = 25 OC Parameter Symbol Value Unit Collector Base Voltage BC856W BC857W BC858W BC859W BC860W -VCBO 80 50 30 30 50 V Collector Emitter Voltage


    Original     		PDF BC856W. BC860W BC856W BC857W BC858W BC859W BC856AW BC856BW BC856CW BC856W BC857W BC858W BC859W BC860AW BC860BW BC860W

    transistor marking 4D

    Abstract: BC859BW BC859CW BC859W BC860AW BC860BW BC860CW BC860W Transistor marking S
    Text: bbS B 'm Philips Semiconductors D0544fl4 012 IAPX Product specification PNP general purpose transistor A MER FEATURES BC859W; BC860W PHILIPS/DISCRETE b?E PIN CONFIGURATION • S- mini package. • Low noise H i. EL 1 c DESCRIPTION PNP transistor in a plastic SOT323


    OCR Scan     		PDF D0544fl4 BC859W; BC860W OT323 OT323 BC859W: BC659AW BC859BW BC859CW BC860W: transistor marking 4D BC859W BC860AW BC860BW BC860CW BC860W Transistor marking S

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Product specification PNP general purpose transistors FEATURES BC859W; BC860W PINNING • Low current max. 100 mA PIN • Low voltage (max. 45 V). APPLICATIONS DESCRIPTION 1 base 2 emitter 3 collector • Low noise stages in tape recorders, hi-fi amplifiers and


    OCR Scan     		PDF BC859W; BC860W OT323 BC849W BC850W. BC859W BC859AW BC859BW BC859CW BC860W

    marking code 4D

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS BITÂ S y i I T ly BC859W; BC860W PNP general purpose transistors Product specification Supersedes data of 1997 Sep 03 Philips Sem iconductors 1999 Apr 12 PHILIPS Philips Semiconductors Product specification BC859W; BC860W PNP general purpose transistors


    OCR Scan     		PDF BC859W; BC860W BC860W BC850W 115002/00/04/pp8 marking code 4D

    Untitled

    Abstract: No abstract text available
    Text: b b S B ' m 0054484 015 * A P X Philips Semiconductors PNP general purpose transistor BC859W; BC860W AUER PHILIPS/DISCRETE FEATURES Product specification b?E PIN CONFIGURATION • S- mini package. • Low noise JEL?_EL 1 c DESCRIPTION PNP transistor in a plastic SOT323


    OCR Scan     		PDF BC859W; BC860W OT323 MBB018 MBC87 BC859W: BC859AW BC859BW BC859CW