1B025F Search Results

1B025F Price and Stock

Filter by Manufacturer

Select Manufacturer


MACOM CMPA801B025F-AMP CMPA801B025F DEV BOARD WITH HEMT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B025F-AMP	Box	2		1	1 $890.58 10 $890.58 100 $890.58 1000 $890.58 10000 $890.58	Buy Now
MACOM CMPA801B025F IC RF AMP 8.5GHZ-11GHZ 440208
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B025F	Tray			75	1 - 10 - 100 $481.32626 1000 $481.32626 10000 $481.32626	Buy Now
MACOM CMPA801B025F-TB RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CMPA801B025F-TB				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wolfspeed CMPA801B025F RF & Microwave
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	CMPA801B025F		256			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Wolfspeed CMPA801B025F-TB RF & Microwave
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Vyrian	CMPA801B025F-TB		1			1 - 10 - 100 - 1000 - 10000 -	Get Quote

1B025F Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: 1B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Contextual Info: 1B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs	PDF
Contextual Info: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F	PDF
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Contextual Info: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack	PDF
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Contextual Info: 1B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s 1B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f	PDF