CMPA801B025 Search Results

CMPA801B025 Price and Stock

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MACOM CMPA801B025P IC AMP RADAR 8.5GHZ-11GHZ 440216
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	CMPA801B025P	Bulk				1 - 10 - 100 - 1000 - 10000 -	Buy Now
MACOM CMPA801B025F IC RF AMP 8.5GHZ-11GHZ 440208
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DigiKey	CMPA801B025F	Tray			75	1 - 10 - 100 $481.32626 1000 $481.32626 10000 $481.32626	Buy Now
MACOM CMPA801B025F-TB RF & MW AMPLIFIER EVALUATION BOARD/DESIGNER KIT
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Richardson RFPD	CMPA801B025F-TB				1	1 - 10 - 100 - 1000 - 10000 -	Get Quote

CMPA801B025 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
CMPA801B025F		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ 440208		Original	PDF
CMPA801B025F-AMP		Wolfspeed	CMPA801B025F DEV BOARD WITH HEMT		Original	PDF
CMPA801B025F-TB		Cree/Wolfspeed	RF/IF and RFID - RF Amplifiers - IC RF AMP 8.5GHZ-11GHZ MODULE		Original	PDF

CMPA801B025 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F
Untitled Abstract: No abstract text available Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	PDF	CMPA801B025D CMP801B025D CMPA801B025D
CMPA801B025D Abstract: No abstract text available Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	PDF	CMPA801B025D CMP801B025D CMPA801B025D
CMPA801B025 Abstract: X-band Internally Matched Power GaN HEMTs Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs
Untitled Abstract: No abstract text available Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F
CMPA801B025D Abstract: CMPA801B025 Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	PDF	CMPA801B025D CMP801B025D CMPA801B025D CMPA801B025
CMPA801B025 Abstract: CMPA801B025F x-band mmic 3.5 DC Jack Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 x-band mmic 3.5 DC Jack
CMPA801B025F Abstract: CMPA801B025 cree rf 1B025F package 440208 cree rf cmpa801b025f Text: CMPA801B025F 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher	Original	PDF	CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 cree rf package 440208 cree rf cmpa801b025f
CMPA801B025D Abstract: No abstract text available Text: CMPA801B025D 25 W, 8.0 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMP801B025D is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher	Original	PDF	CMPA801B025D CMP801B025D CMPA801B025D