dr25 diode specifications
Abstract: DR25 Diode OP 741 L6690 free download led wiring guide LLD1002E01
Text: INFRARED PULSED LASER DIODE L6690 Figure 2: Typical Radiant Power vs. Pulsed Forward Current INFRARED PULSED LASER DIODE Ta=25℃ (Ta=25℃) 100 RELATIVE RADIANT POWER (%) 2.5 ep 2.0 1.5 1.0 0.5 1.0 1.5 2.0 2.5 40 20 830 3.0 ●High duty ratio (DR≦2.5%)
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L6690
dr25 diode specifications
DR25 Diode
OP 741
L6690
free download led wiring guide
LLD1002E01
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HAMAMATSU PHOTONICS K.K
Abstract: CW laser diode L9277
Text: Lateral multimode broad stripe CW Laser Diode L9277 Series •FEATURES ●Radiant output power (CW): 1 W ●Peak emission wavelength: 830 nm ●Emitting area size: 50 µm x 1 µm ■APPLICATIONS ●Pumping source for solid state laser ●Processing ●Medical instrument
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L9277
SE-164
LCWLD2012E01
HAMAMATSU PHOTONICS K.K
CW laser diode
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G8370-81
Abstract: G8370-82 G8370-83 G8370-85
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E04
G8370-81
G8370-82
G8370-83
G8370-85
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
SE-171
KIRD1064E04
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PDF
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
SE-171
KIRD1064E03
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PDF
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E02
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PDF
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Low PDL Polarization Dependence Loss InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL (Polarization Dependence Loss) at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E03
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PDF
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE InGaAs PIN photodiode G8370-81/-82/-83/-85 Large active areas from φ1 to φ5 mm InGaAs PIN photodiodes G8370-81/-82/-83/-85 have low PDL Polarization Dependence Loss at 1.55 µm, large shunt resistance and very low noise. Hamamatsu provides various types of InGaAs PIN photodiodes with active areas from φ1 to φ5 mm.
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G8370-81/-82/-83/-85
G8370-81/-82/-83/-85
G8370-81
G8370-82
G8370-83
G8370-85
SE-171
KIRD1064E01
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PDF
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600 um laser fiber medical
Abstract: L929 Peltier element L9399 836 DIODE LLD1012E01 836 DIODE current "Peltier element" AL7 1BW CW Laser
Text: FIBER-OUTPUT CW LASER DIODES L9399 Figure 1: Radiant Output Power vs. Forward Current Typ. 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.4 0.6 0.8 1.0 1.2 ( Top(c) = 20 °C ) 100 Relative Radiant Output Power (%) Radiant Output Power Φe (W) Figure 2: Emission Spectrum (Typ.)
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L9399
L9399
600 um laser fiber medical
L929
Peltier element
836 DIODE
LLD1012E01
836 DIODE current
"Peltier element"
AL7 1BW
CW Laser
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C
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S8559
SE-171
KSPD1051E02
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scintillator
Abstract: S8559 x-ray tube SE-171
Text: PHOTODIODE Si photodiode S8559 Detector for X-ray monitor Features Applications l Si photodiode coupled to low cost CsI scintillator l Ideal for detection of X-ray energy below 100 keV l X-ray detection l X-ray monitors • Absolute maximum ratings Ta=25 °C
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S8559
SE-171
KSPD1051E02
scintillator
S8559
x-ray tube
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CW Laser
Abstract: hamamatsu hpk
Text: FIBER-OUTPUT CW LASER DIODES L9399-02 PRELIMINARY DATA Fiber-output Laser Diode, Easy Handling, And Various Applications FEATURES High radiant optical power Fiber out : 1 W High stability Long life High cost performance APPLICATIONS Printing Material Processing
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L9399-02
L9399-02
SE-171-41
LLD1018E02
CW Laser
hamamatsu hpk
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Untitled
Abstract: No abstract text available
Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet
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L9279-14
SE-171
KLED1042E04
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LASER RANGE FINDER
Abstract: for LASER RANGE FINDER L7055 free download led wiring guide OP 741 L7055-04 LLD1004E02
Text: HIGH-POWER INFRARED PULSED LASER DIODE L7055-04 Figure 2: Typical Radiant Power vs. Pulsed Forward Current Figure 3: Typical Emission Spectrum Ta=25℃ 100 RELATIVE RADIANT POWER (%) (Ｗ) 30 20 10 10 20 30 •FEATURES ●High output power (φep≦20W) ●High speed rise time (tr=0.5 ns typ.)
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L7055-04
ep20W)
SE-171-41
LLD1004E02
LASER RANGE FINDER
for LASER RANGE FINDER
L7055
free download led wiring guide
OP 741
L7055-04
LLD1004E02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
SE-171
KSPD1042E02
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CW Laser
Abstract: No abstract text available
Text: FIBER-OUTPUT CW LASER DIODES L9399-02 PRELIMINARY DATA Fiber-output Laser Diode, Easy Handling, And Various Applications FEATURES High radiant optical power Fiber out : 1 W High stability Long life High cost performance APPLICATIONS Printing Material Processing
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L9399-02
L9399-02
Forw82
SE-171-41
LLD1018E01
CW Laser
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marking code 1BL Diode
Abstract: 1bw 83 marking code 1AW J-STD-002B SMB10 JESD22-B102D marking code 1ay
Text: SMB10 8 J5.0(C) thru SMB10(8)J40(C)A Vishay General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in Unidirectional and Bidirectional
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SMB10
J-STD-020C,
2002/95/EC
2002/96/EC
DO-214AA
08-Apr-05
marking code 1BL Diode
1bw 83
marking code 1AW
J-STD-002B
JESD22-B102D
marking code 1ay
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LLD1003E01
Abstract: OP 741 L7060-02 for LASER RANGE FINDER
Text: HIGH-POWER INFRARED PULSED LASER DIODE L7060-02 Figure 2: Typical Radiant Power vs. Pulsed Forward Current Figure 3: Typical Emission Spectrum Ta=25℃ 100 RELATIVE RADIANT POWER (%) (Ｗ) 30 20 10 10 20 30 •FEATURES ●High output power (φep≧30W) ●High speed rise time (tr=0.5 ns typ.)
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L7060-02
ep30W)
LLD1003E01
LLD1003E01
OP 741
L7060-02
for LASER RANGE FINDER
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CW Laser
Abstract: No abstract text available
Text: FIBER-OUTPUT CW LASER DIODES L9399-02 PRELIMINARY DATA Fiber-output Laser Diode, Easy Handling, And Various Applications FEATURES High radiant optical power Fiber out : 1 W High stability Long life High cost performance APPLICATIONS Printing Material Processing
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L9399-02
L9399-02
SE-171-41
LLD1018E01
CW Laser
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Untitled
Abstract: No abstract text available
Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet
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L9279-14
SE-171
KLED1042E03
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S8193
Abstract: scintillator SE-171
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
SE-171
KSPD1042E02
S8193
scintillator
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marking 1af
Abstract: marking code 1bx marking code 1bw marking code 1BL Diode marking CODE 1BS 1BW MARKING 1ag marking code marking code 1AW marking code 1av MARKING 1BW
Text: SMB10J5.0 thru 40A and SMB8J5.0C thru 40CA Vishay Semiconductors New Product formerly General Semiconductor High Power Density Surface Mount TRANSZORB Transient Voltage Suppressors Stand-off Voltage 5.0 to 40V Peak Pulse Power 1000W unidirectional 800W (bidirectional)
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SMB10J5
DO-214AA
50mVp-p
11-Mar-04
marking 1af
marking code 1bx
marking code 1bw
marking code 1BL Diode
marking CODE 1BS
1BW MARKING
1ag marking code
marking code 1AW
marking code 1av
MARKING 1BW
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L9279-14
Abstract: SE-171
Text: LASER DIODE Laser diode L9279-14 TOSA type, 850 nm VCSEL, High-speed response: 2.5 Gbps Features Applications l 850 nm VCSEL l φ1.25 mm sleeve type TOSA Transmitter Optical Sub-Assembly l High-speed response: 2.5 Gbps l Optical fiber communications l Gigabit Ethernet
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L9279-14
25phone:
SE-171
KLED1042E03
L9279-14
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Super luminescent diode (SLD)
Abstract: No abstract text available
Text: Super Luminescent Diode SLD L12856-04 Parameter Forward current Symbol Value Unit If 185 mA Radiant flux Φe 15 mW SLD reverse voltage Vrs 1.5 V PD* reverse voltage Vrd 20 V Operating temperature Top(c) -10 to +70 ℃ Tstg -20 to +80 ℃ 1) Storage temperature
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L12856-04
B1201
LSLD2006E02
Super luminescent diode (SLD)
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