Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
SE-171
KSPD1042E02
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Untitled
Abstract: No abstract text available
Text: PHOTODIODE Si フォトダイオード S8193 X線モニタ用検出器 特長 特長 l 高感度高信頼性のセラミックシンチレータ付フォト ダイオード l X線感度: CWOの1.8倍 l CsIより残光が少ない: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
KSPD1042J03
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scintillator
Abstract: S8193 SE-171 ceramic scintillator
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms l Unlike CsI, has no deliquescence
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S8193
SE-171
KSPD1042E01
scintillator
S8193
ceramic scintillator
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S8193
Abstract: PA100
Text: PHOTODIODE Si フォトダイオード S8193 X線モニタ用検出器 特長 特長 l 高感度高信頼性のセラミックシンチレータ付フォト ダイオード l X線感度: CWOの1.8倍 l CsIより残光が少ない: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
KSPDB0152JA
KSPDB0153JA
KSPDA0129JA
435-85581126-1TEL
434-3311FAX
KSPD1042J02
S8193
PA100
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scintillator
Abstract: S8193 SE-171 x-ray tube 026 950-S photodiode 011
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
SE-171
KSPD1042E01
scintillator
S8193
x-ray tube 026
950-S
photodiode 011
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S8193
Abstract: scintillator SE-171
Text: PHOTODIODE Si photodiode S8193 Detector for X-ray monitors Features Applications l High sensitivity, high reliability photodiode with ceramic scintillator l High X-ray sensitivity: 1.8 times that of CWO l Less afterglow than CsI: <0.1 %/3 ms, <0.01 %/30 ms
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S8193
SE-171
KSPD1042E02
S8193
scintillator
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near IR photodiodes
Abstract: S8745-01 S8558
Text: Selection guide - February 2014 Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation HAMAMATSU PHOTONICS K.K. S i P h o t o d i o d e Si Photodiodes Lineup of Si photodiodes for UV to near IR, radiation Si photodiode package •··················································· 5
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KSPD0001E09
near IR photodiodes
S8745-01
S8558
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A 1469 mosfet
Abstract: 68595
Text: SPICE Device Model Si5475DDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5475DDC
S-81932-Rev.
25-Aug-08
A 1469 mosfet
68595
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SI4943CDY
Abstract: No abstract text available
Text: SPICE Device Model Si4943CDY Vishay Siliconix Dual P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125°C Temperature Range
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Si4943CDY
S-81935-Rev.
08-Sep-08
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si7121
Abstract: Si7121DN
Text: SPICE Device Model Si7121DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7121DN
18-Jul-08
si7121
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S8558
Abstract: No abstract text available
Text: セレクションガイド 2014.5 Siフォトダイオード 紫 外 ~ 近 赤 外 域 放 射 線 に 対 応した ラ イ ン アップ Si PHOTODIODE S i P h o t o d i o d e Siフォトダイオード 紫 外 ∼ 近 赤 外 域 、放 射 線 に 対 応した ラ イ ン アップ
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Untitled
Abstract: No abstract text available
Text: SPICE Device Model Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5406CDC
18-Jul-08
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A 1469 mosfet
Abstract: 68595
Text: SPICE Device Model Si5475DDC Vishay Siliconix P-Channel 12-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5475DDC
18-Jul-08
A 1469 mosfet
68595
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Si4626ADY
Abstract: No abstract text available
Text: SPICE Device Model Si4626ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4626ADY
S-81936-Rev.
01-Sep-08
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S8193
Abstract: No abstract text available
Text: SPICE Device Model Si4688DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4688DY
18-Jul-08
S8193
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Si7123DN
Abstract: No abstract text available
Text: SPICE Device Model Si7123DN Vishay Siliconix P-Channel 20-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7123DN
18-Jul-08
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Si4835DDY
Abstract: a4022 FS 0245
Text: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4835DDY
S-81937-Rev.
01-Sep-08
a4022
FS 0245
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SI7121DN
Abstract: FS 0245 A4022
Text: SPICE Device Model Si7121DN Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si7121DN
S-81931-Rev.
25-Aug-08
FS 0245
A4022
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Si4835DDY
Abstract: No abstract text available
Text: SPICE Device Model Si4835DDY Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4835DDY
18-Jul-08
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Si4626ADY
Abstract: si4626a
Text: SPICE Device Model Si4626ADY Vishay Siliconix N-Channel Reduced Qg, Fast Switching WFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model Subcircuit Model • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4626ADY
18-Jul-08
si4626a
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a1718
Abstract: No abstract text available
Text: SPICE Device Model Si5403DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5403DC
18-Jul-08
a1718
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Si5403DC
Abstract: No abstract text available
Text: SPICE Device Model Si5403DC Vishay Siliconix P-Channel 30-V D-S MOSFET CHARACTERISTICS • P-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5403DC
S-81934-Rev.
25-Aug-08
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sd 1074
Abstract: SI5406CDC
Text: SPICE Device Model Si5406CDC Vishay Siliconix N-Channel 12-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si5406CDC
S-81933-Rev.
25-Aug-08
sd 1074
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A1-4024
Abstract: No abstract text available
Text: SPICE Device Model Si4688DY Vishay Siliconix N-Channel 30-V D-S MOSFET CHARACTERISTICS • N-Channel Vertical DMOS • Macro Model (Subcircuit Model) • Level 3 MOS • Apply for both Linear and Switching Application • Accurate over the - 55 °C to 125 °C Temperature Range
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Si4688DY
S-81938-Rev.
01-Sep-08
A1-4024
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