1C01V Search Results

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OMRON Industrial Automation SRM1C01V1
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	SRM1C01V1					1 $573.27 10 $573.27 100 $573.27 1000 $573.27 10000 $573.27	Buy Now

1C01V Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
BUK455-600B Abstract: LG 631 Text: PHILIPS bSE J> INTERNATIONAL m 711Gfl2b 0Db4101 Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	PDF	711Gfl2b 0Db4101 BUK455-600B PINNING-T0220AB BUK455-600B LG 631
Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor BUK637-400B Fast recovery diode FET_ _ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor In a plastic envelope. FREDFET with fast recovery	OCR Scan	PDF	BUK637-400B BUK637-400B
BUK455-600B Abstract: transistor buk455 Philips 34D Text: PHILIPS INTERN ATI ONAL bSE D m 711GÛ2b 0Db4101 7T5 « P H I N Philips Semiconductors Product Specification PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in	OCR Scan	PDF	0Db4101 BUK455-600B -T0220AB 711Dfl2b BUK455-600B transistor buk455 Philips 34D
BU2530AW Abstract: No abstract text available Text: Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2530AW GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.	OCR Scan	PDF	BU2530AW 1C01V BU2530AW
Untitled Abstract: No abstract text available Text: Product Specification Philips Semiconductors PowerMOS transistor GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , motor control, welding,	OCR Scan	PDF	BUK438-800A/B BUK438 -800A -800B
BUK657-400B Abstract: No abstract text available Text: PHILIPS INTERNATIONAL bSE D m 711035b 00b43Sl 3 55 • PHIN Philips Semiconductors Product Specification PowerMOS transistor BUK657-400B Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a	OCR Scan	PDF	711035b 00b43Sl BUK657-400B -T0220AB